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排序方式: 共有2710条查询结果,搜索用时 15 毫秒
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S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
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L. K. Aminov I. N. Kurkin D. A. Lukoyanov K. P. Chernov 《Physics of the Solid State》1997,39(8):1184-1186
Results are reported for measurements of the spin-lattice relaxation times of E′1 centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz
over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of
the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm−1. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency
dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation
of irradiation centers in crystalline quartz and quartz glass.
Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997) 相似文献
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D. N. Karimov E. A. Krivandina Z. I. Zhmurova B. P. Sobolev V. A. Bezhanov S. P. Chernov G. M. Shapochkin 《Crystallography Reports》2006,51(6):1009-1015
Crystalline materials that are transparent in the vacuum UV spectral region and currently used have been reviewed. Transmission of crystals of solid solutions with the fluorite structure Ca1?x R xF2+x (R = Sc, Y, La, Yb, Lu) in the UV and vacuum UV spectral regions has been investigated. It is shown that application of different methods of purification of fluorides from some impurities can significantly improve the optical quality of fluoride multicomponent crystals in the short-wavelength spectral region. 相似文献
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For the first time a comparative study of holographic recording in planarly oriented films of nematic and cholesteric azobenzene-containing polymers was performed. The influence of temperature and light intensity on the values of diffraction efficiencies of holographic gratings was investigated. The kinetics of grating relaxation at different temperatures was studied. It was shown that the helical supramolecular structure of cholesteric copolymer causes a significant decrease of the diffraction efficiency in comparison with the one observed for the nematic state of the homopolymer. 相似文献
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M. G. Voronkov E. A. Grebneva O. M. Trofimova A. I. Albanov N. F. Chernov N. N. Chipanina 《Russian Journal of General Chemistry》2006,76(12):1851-1853
Reaction of tetrafluorosilane with tris(2-hydroxyethyl)-and tris(2-trimethylsiloxyethyl)amine results in formation of 1-fluorosilatrane and fluorosilatrane in 75 and 53% yield, respectively. Reaction of tetrafluorosilane with bis(2-trimethylsiloxyethyl)amine and its N-methyl derivative leads to the hitherto unknown 1,1-difluoroquasisilatranes (N → Si) F2Si(OCH2CH2)2NR (R = H, Me) containing donor-acceptor bond N → Si and pentacoordinate silicon atom. The structure of the synthesized compounds was proved by 1H, 13C, 15N, 19F, 29Si NMR and IR spectroscopy. 相似文献
10.
Alexey Yurasov Alexander Granovsky Sergey Tarapov Jean-Pierre Clerc 《Journal of magnetism and magnetic materials》2006
The transmission of millimeter-range electromagnetic waves (30–50 GHz) through a magnetic nanocomposite thin film exhibiting tunnel magnetoresistance (TMR) is calculated. The relative change of transmission coefficient in an applied magnetic field due to the magnetorefractive effect is approximately linear with TMR and strongly depends on nanocomposite resistivity and film thickness. The obtained results are in a good agreement with experiment. 相似文献