排序方式: 共有4条查询结果,搜索用时 15 毫秒
1
1.
Crystallization Process of Superlattice-Like Sb/SiO_2 Thin Films for Phase Change Memory Application 下载免费PDF全文
After compositing with SiO_2 layers, it is shown that superlattice-like Sb/SiO_2 thin films have higher crystallization temperature(~240°C), larger crystallization activation energy(6.22 e V), and better data retention ability(189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO_2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO_2(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 m W and a good endurance of 3.0 × 10~6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO_2(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K). 相似文献
2.
3.
利用平面动力系统理论研究了Boussinesq-Burgers方程,讨论了方程在行波变换后所对应的平面动力系统的分岔行为,并基于相平面上特定的相轨道求出了该方程的扭结波、孤立波及周期波的解析表达式.数值模拟进一步验证了所得结论的正确性. 相似文献
4.
1