发光聚合物中光激发引起磁化率改变的新现象

揭示了发光聚合物中光激发引起的一个新现象，光激发即吸收一个光子 使发光聚合物中的正双极化子分裂成两个带正电的极化子，从而使发光聚合物的磁化率改变。     

超晶格的理论研究

本文用半经验紧束缚法研究了(ZnSe)_n/(Ge)_(2m)(100)超晶格,计算了其能隙随层厚的变化,其结果能说明超晶格体系的准二维特性,表明(7,7)超晶格已足以模拟异质界面问题,并指出(ZnSe)_n/(Ge)_(2m)(100)超晶格的禁带中很可能存在界面态。     

A Novel Coupled Quantum Well Structure with Low-Driving Voltage, Low Absorption Loss and Large Field-Induced Refractive Index Change

Based on a two-energy-level system, we analyse the changing ground eigenenergies of symmetric CaAs/Alx Ca1-x As coupled quantum wells in the presence of an applied electric field. From the theoretical analysis for symmetric coupled quantum well, we find the advantages and disadvantages when it is applied to travelling wave modulator.Hence the conception of quasi-symmetric coupled quantum wells is put forward. Based on the demands of travelling wave modulator for quantum well materials, the configuration of quasi-symmetric coupled quantum well is further optimized. Consequently, in the case of low applied electric field (F=20 kV/cm) and low absorption loss (α≤100cm^-1), a large field-induced refractive change △n (for TE mode, △n = 0.021; for TM mode, △n=0.0121) is attained in the optimized coupled quantum well.     

PFCVD氮化硅膜的性质与生长条件的关系

本文研究由国产DD-P 250型等离子淀积设备制备的氮化硅膜的性质与膜的生长条件的关系.俄歇分析的估算表明膜的组份在纵向分布均匀，含氧量均较低(3%以下)，任何使Si/N比增大的生长条件均会使固定界面正电荷增加，固是界面正电荷密度与陷阱密度均在10'z/cmz量级，膜的导电机理显示Poole-Frenkel发射，当Si/N比为1.25^-0.81时，膜的击穿场强为3.0~8. 5 MV/cm.     

衬底温度对PECVD氮化硅膜性质的影响

本文研究了PECVD氮化硅膜的性质与衬底温度的关系,对不同衬底温度的膜的折射率、腐蚀速率、介电特性进行了讨论;本文还指出,膜的导电机理符合Poole-Frenkel发射.C-V曲线的显著滞后效应表明,膜中存在高密度的陷阱。