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Nonlinear Dynamics - In order to solve the constrained-input problem and reduce the computing resources, a novel event-triggered optimal control method is proposed for a class of discrete-time... 相似文献
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Mathematical Programming - In the general equilibrium with incomplete asset markets (GEI) model, the excess demand functions are typically not continuous at the prices for which the assets have... 相似文献
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For an integer , a graph is -hamiltonian if for any vertex subset with , is hamiltonian, and is -hamiltonian connected if for any vertex subset with , is hamiltonian connected. Thomassen in 1984 conjectured that every 4-connected line graph is hamiltonian (see Thomassen, 1986), and Ku?zel and Xiong in 2004 conjectured that every 4-connected line graph is hamiltonian connected (see Ryjá?ek and Vrána, 2011). In Broersma and Veldman (1987), Broersma and Veldman raised the characterization problem of -hamiltonian line graphs. In Lai and Shao (2013), it is conjectured that for , a line graph is -hamiltonian if and only if is -connected. In this paper we prove the following.(i) For an integer , the line graph of a claw-free graph is -hamiltonian if and only if is -connected.(ii) The line graph of a claw-free graph is 1-hamiltonian connected if and only if is 4-connected. 相似文献
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以六水氯化镁和六次甲基四胺为原料,采用水热法合成四方体MgO,考察其对有机染料甲基橙和亚甲基蓝的吸附行为.通过TGA-DTA、SEM、XRD、N2-sorption和FT-IR等手段表征样品.结果表明,原料浓度、温度和表面活性剂对四方体MgO结构的形成影响较小,而反应时间的延长有助于有序结构的组装.温度170℃、时间24h、MgCl2·6H2O与C6H12N4浓度比为1∶2和表面活性剂PVP是制备四方体MgO的最佳条件.在溶液浓度10mg · L-1的单一吸附实验过程中,四方体MgO对甲基橙和亚甲基蓝的去除率分别为91.3;和22.3;,吸附过程均为单层吸附且符合Langmuir等温吸附模型和伪二级吸附动力学方程.在溶液浓度40 mg·L-1、甲基橙和亚甲基蓝浓度比3∶1的混合溶液吸附过程中,四方体MgO对甲基橙和亚甲基蓝的去除率分别为80.1;和97.9;. 相似文献
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随着经济的飞速发展,社会对能源的需求日益扩大,对工业废水的无害化处理也提出了更高的要求。光催化燃料电池 (photocatalytic fuel cell, PFC) 在燃料电池中引入半导体光催化材料作为电极,实现了有机污染物高效降解和同步对外产电的双重功能,在废水无害化与资源化利用方面具有潜在的应用价值。半导体光催化电极是PFC系统高效运行的核心组件,增强其可见光响应和光生载流子分离是提高PFC性能的关键策略。反应器结构设计和运行参数优化也有利于改善PFC性能。本文从PFC基本原理和应用入手,综述了PFC在环境污染物资源化处理中的研究进展,并详细阐述了提高PFC的污染控制性能和产电效率的优化手段,为进一步设计高效稳定的PFC系统并实现其在水污染控制和清洁能源生产中的应用提供理论指导。 相似文献
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Yifeng Xiang Xi Tang Changjun Min Guanghao Rui Yan Kuai Fengya Lu Pei Wang Hai Ming Qiwen Zhan Xiaocong Yuan Joseph R. Lakowicz Douguo Zhang 《Annalen der Physik》2020,532(4):1900497
Near-field optical trapping can be realized with focused evanescent waves that are excited at the water–glass interface due to the total internal reflection, or with focused plasmonic waves excited on the water–gold interface. Herein, the performance of these two kinds of near-field optical trapping techniques is compared using the same optical microscope configuration. Experimental results show that only a single-micron polystyrene bead can be trapped by the focused evanescent waves, whereas many beads are simultaneously attracted to the center of the excited region by focused plasmonic waves. This difference in trapping behavior is analyzed from the electric field intensity distributions of these two kinds of focused surface waves and the difference in trapping behavior is attributed to photothermal effects due to the light absorption by the gold film. 相似文献
9.
Shi-Tao Han Hong-Ying Duan Lan-Yun Chen Dr. Tian-Guang Zhan Dr. Li-Juan Liu Li-Chun Kong Prof. Kang-Da Zhang 《化学:亚洲杂志》2021,16(23):3886-3889
A photo-switchable hetero-complementary quadruple H-bonding array, which consists of an azobenzene-derived ureidopyrimidinone (UPy) module ( Azo-UPy ) and a nonphotoactive diamidonaphthyridine (DAN) derivative ( Napy-1 ), is constructed based on a reversible photo-locking approach. Upon UV (390 nm)/Vis (460 nm) light irradiations, photo-switchable quadruple H-bonded dimerization between Azo-UPy and Napy-1 can be achieved with exhibiting 4.8×104-fold differences in binding strength (ON/OFF ratios). Furthermore, smart polymeric gels with unique photo-controlled macroscopic self-assembly behavior can be fabricated by introducing such quadruple H-bonding array as photo-regulable noncovalent interfacial connections. 相似文献
10.
Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×1015 cm-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA. 相似文献