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2.
针对圆柱形膨胀腔消声器三维建模及声学性能分析问题, 提出一种基于切比雪夫变分原理的耦合声场建模方法, 建立三维圆柱形膨胀腔消声器理论模型并搭建试验台架, 传递损失试验结果验证了理论模型的准确性. 将膨胀腔消声器内部声场分解为多个子声场, 基于子声场间压力与质点振速连续性条件, 推导声场耦合变分公式, 构建子声场拉格朗日泛函. 将子声场声压函数展开为切比雪夫-傅里叶级数形式, 通过瑞利-里兹法求解膨胀腔消声器频率、声压响应及传递损失. 计算并对比分析扩张比、扩张腔长度、进出口管偏置对膨胀腔消声器消声性能的影响. 结果表明: 扩张比增大会有效提高消声器在低频段的消声性能, 进出口管的偏置对消声器消声性能影响很小. 相似文献
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The molecular geometries and dissociation energies of AnO (An = Bk–Lr) molecules were first obtained at thecoupled-cluster single-, double-, and perturbative triple-excitations [CCSD(T)] level of theory. Four hybrid functionals,B3LYP, M06-2X, TPSSh, and PBE0, were also employed in the calculations for the sake of comparison. In comparison ofthe CCSD(T) results, B3LYP, TPSSh, and PBE0 functionals can obtain more appropriate results than M06-2X and MP2.The analyses on molecular orbitals show that the 7s, 6d, and 5f atomic orbitals of actinide (An) atoms participate in thebonding of An–O bonds. The partial covalent nature between An and O atoms is revealed by QTAIM analyses. 相似文献
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Kai Cheng Xiao-Shuai Zhang Jie An Cheng Li Ruo-Yun Zhang Run Ye Prof. Dr. Bang-Jiao Ye Prof. Dr. Bo Liu Prof. Dr. Yuan-Di Zhao 《Chemistry (Weinheim an der Bergstrasse, Germany)》2019,25(31):7553-7560
Given their superior penetration depths, photosensitizers with longer absorption wavelengths present broader application prospects in photodynamic therapy (PDT). Herein, Ag2S quantum dots were discovered, for the first time, to be capable of killing tumor cells through the photodynamic route by near-infrared light irradiation, which means relatively less excitation of the probe compared with traditional photosensitizers absorbing short wavelengths. On modification with polydopamine (PDA), PDA-Ag2S was obtained, which showed outstanding capacity for inducing reactive oxygen species (increased by 1.69 times). With the addition of PDA, Ag2S had more opportunities to react with surrounding O2, which was demonstrated by typical triplet electron spin resonance (ESR) analysis. Furthermore, the PDT effects of Ag2S and PDA-Ag2S achieved at longer wavelengths were almost identical to the effects produced at 660 nm, which was proved by studies in vitro. PDA-Ag2S showed distinctly better therapeutic effects than Ag2S in experiments in vivo, which further validated the enhanced regulatory effect of PDA. Altogether, a new photosensitizer with longer absorption wavelength was developed by using the hitherto-unexplored photodynamic function of Ag2S quantum dots, which extended and enhanced the regulatory effect originating from PDA. 相似文献
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Tianyu Gong Longhai Guo Jun Ye Lifan He Teng Qiu Xiaoyu Li 《Journal of polymer science. Part A, Polymer chemistry》2021,59(16):1807-1820
The implementation of covalent adaptable networks (CANs) in general resin system is becoming attractive. In this work, we propose a simple post-curing strategy based on the core-shell structured acrylate latex for the achievement on both the improved general performance and the CANs characteristics in latex films. The building to the CANs was relied on the introduction of 4,4′-diaminophenyl disulfide as the curing agent, which cured the acetoacetoxy decorated shell polymer through the ketoamine reaction. The metathesis reaction of aromatic disulfides in the crosslinking segments enabled the thermally induced dynamic behavior of the network as revealed in the stress relaxation tests by comparison with other diamine crosslinking agents without the incorporation of disulfide. The synergism of the dynamic crosslinking of the shell polymer and static crosslinking in the core polymer contributed to the improved mechanical strength (15 MPa, strain% = 250%) and the suppressed water adsorption (~1% in 24 h of soaking) of the latex film, which exhibited above 90% of recovery in both strength and strain from a cut-off film damage within 1 h at 80°C. Moreover, the cured latex film could be recycled, and 75% of the mechanical performance was regained after three fragmentation-hot-pressing cycles. These, in addition with the feasible and environmental friendly characteristics, suggest a sustainable paradigm toward the smart thermosetting latex polymers. 相似文献
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Wang Dong Ming Fei Song Xue-Ke Ye Liu Chen Jing-Ling 《The European Physical Journal C - Particles and Fields》2020,80(8):1-16
The European Physical Journal C - We study the isentropic evolution of the matter produced in relativistic heavy-ion collisions for various values of the entropy-per-baryon ratio of interest for... 相似文献
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采用湿化学法合成了Eu原子掺量5%的Lu2O3陶瓷前驱体,通过SEM、XRD研究了煅烧前后前驱体和1 100 ℃煅烧4 h后粉体的形貌、结构以及物相。结果表明煅烧后的粉体为纳米类球形、高分散且结晶性良好的颗粒。颗粒尺寸为68.5 nm。使用煅烧后的粉体为原料,在1 650 ℃真空烧结30 h制备了高透过率的Eu:Lu2O3陶瓷,晶粒尺寸为46 μm,在611 nm处的直线透过率可以达到66.3%。此外对陶瓷的吸收曲线、光致激发和发射光谱特性以及X射线激发发射光谱进行研究。可观察到,Eu:Lu2O3陶瓷存在基质和激活离子两类吸收,光致发光光谱和X射线激发发射光谱均可以看出Eu:Lu2O3陶瓷存在极强的5D0→7F2跃迁发光,位于611 nm处。对比商业的BGO单晶的X射线发射光谱,可得本实验中制备的陶瓷的光输出为85 000 ph/MeV。Eu:Lu2O3陶瓷本身有着高X射线以及高能粒子的阻止能力,结合高光输出特性,表明Eu:Lu2O3陶瓷在X射线成像等领域具有巨大的潜在应用价值。 相似文献
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Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×1015 cm-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA. 相似文献