Alkaline oxygen evolution: exploring synergy between fcc and hcp cobalt nanoparticles entrapped in N-doped graphene

Herein, we report a Mott-Schottky catalyst by entrapping cobalt nanoparticles inside the N-doped graphene shell (Co@NC). The Co@NC delivered excellent oxygen evolution activity with an overpotential of merely 248 mV at a current density of 10 mA cm^–2 with promising long-term stability. The importance of Co encapsulated in NC has further been demonstrated by synthesizing Co nanoparticles without NC shell. The synergy between the hexagonal close-packed (hcp) and face-centered cubic (fcc) Co plays a major role to improve the OER activity, whereas the NC shell optimizes the electronic structure, improves the electron conductivity, and offers a large number of active sites in Co@NC. The density functional theory calculations have revealed that the hcp Co has a dominant role in the surface reaction of electrocatalytic oxygen evolution, whereas the fcc phase induces the built-in electric field at the interfaces with N-doped graphene to accelerate the H⁺ ion transport.     

Packing properties of cubic square-free monomial ideals

Journal of Algebraic Combinatorics - The symbolic powers, in general, are not equal to the ordinary powers. Therefore, one interesting question here is for what classes of ideals ordinary and...     

Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.     

Thermoelastic interactions without energy dissipation in an unbounded body with a spherical cavity subjected to harmonically varying temperature

The present work is concerned with the thermally induced vibration in a homogeneous and isotropic unbounded body with a spherical cavity. The Green and Nagdhi model of thermoelasticity without energy dissipation is employed. The closed form solutions for distributions of displacement, temperature and stresses are obtained. The solutions valid in the case of small frequency are deduced and the results are compared with the corresponding results obtained in other generalized thermoelasticity theories. Numerical results applicable to a copper-like material are also presented graphically and the nature of variations of the physical quantities with radial coordinate and with frequency of vibration is analyzed.     

Flicker noise in degenerately doped Si single crystals near the metal-insulator transition

In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator (MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10⁻²<f<4 × 10¹ Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination process which is the characteristic of a semiconductor.     

Effect of benzophenone on the H2O2-induced photopolymerization of methyl methacrylate

Benzophenone (BP) in low concentrations (<0.001 mol 1^?1) produces a rate enhancing effect in the H₂O₂-induced bulk photopolymerization of MMA. R_p is proportional to [H₂O₂]^0.4 and [BP]^0.4, and $\text{k}{}_{\mathrm{p}}{}^2\text{k}{}_1$ at 30° is 1.00 × 10^?2 1.mol^?1 sec^?1. In diluted systems, different solvents produce different kinetic effects, reaction order with respect to monomer being negative for IPA and THF as solvent, positive but <1.0 for benzene and chloroform, 1.2 for acetonitrile, CCl₄ and t-butanol and 1.8 for DMA. The variable solvent effect is attributed to modification of the initiation process by the various solvents to different extents. Kinetic analysis of data for bulk photopolymerization gives evidence for primary radical termination and degradative initiator transfer.