A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

低浓度煤层气在发烟硫酸中液相部分氧化的催化剂研究

在发烟硫酸溶液中,对低浓度煤层气液相部分氧化的催化剂进行了筛选,考察了硫酸盐化合物系列、过渡金属化合物系列、碘化合物系列对低浓度煤层气液相部分氧化的催化活性,对筛选出的碘催化剂进行了催化剂加入量的考察,并对碘催化剂的催化机理进行了讨论。结果表明,碘单质的催化效果最好,低浓度煤层气中甲烷转化率可达79.69%,甲烷选择性可达83.74%。在对碘催化剂加入量的考察中发现,随着碘催化剂加入量的增加,低浓度煤层气的转化率先增加,达到最大值以后,再逐渐减小。根据甲烷在发烟硫酸溶液中液相部分氧化的反应机理,提出低浓度煤层气在发烟硫酸溶液中液相部分氧化的反应机理属于亲电反应机理。     

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench(HK TG VDMOS) is proposed in this paper.The HK TG VDMOS features a high-k(HK) trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage(BV).Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction(SJ) vertical double-diffused metal-oxide semiconductor(VDMOS),the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS(TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).     

高k介质电导增强SOI LDMOS机理与优化设计

本文提出一种高k介质电导增强SOI LDMOS新结构（HK CE SOI LDMOS）,并研究其机理. HK CE SOI LDMOS的特征是在漂移区两侧引入高k介质,反向阻断时,高k介质对漂移区进行自适应辅助耗尽,实现漂移区三维RESURF效应并调制电场,因而提高器件耐压和漂移区浓度并降低导通电阻. 借助三维仿真研究耐压、比导通电阻与器件结构参数之间的关系. 结果表明,HK CE SOI LDMOS与常规超结SOI LDMOS相比,耐压提高16%–18%,同时比导通电阻降低13%–20%,且缓解了由衬底辅助耗尽效应带来的电荷非平衡问题. 关键词： k介质')" href="#">高k介质 绝缘体上硅 (SOI) 击穿电压 比导通电阻     

A low specific on-resistance SOI MOSFET with dual gates and recessed drain

A low specific on-resistance (R_on,sp) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R_on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R_on,sp of 4.151 mΩ·cm² (V_GS=15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R_on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes.