Bi_2O_3掺杂对Ag(Nb_(0.8)Ta_(0.2))O_3陶瓷结构和介电性能的影响(英文)

本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。     

(Ag0.9Li0.1)(Nb1-yTay)O3纳米瓷粉的制备与表征

A series of (Ag_0.9Li_0.1)(Nb_1-yTa_y)O₃ ceramic powders were prepared by an aque-chemical method. The optimized calcination temperature, time and crystal lattice were studied by TG-DTA, IR, XRD and TEM. The results show that the optimized conditions were calcination of the precursor at 800 ℃ for 2 h. The ceramic powder thus prepared was rhombohedral with the average grain size of 48 nm.     

Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能

研究了Bi4(Ti1/3Sn2/3)3O12掺杂对钛酸钡基陶瓷微观结构和介电性能影响。结果表明,掺杂Bi4(Ti1/3Sn2/3)3O12后钛酸钡基陶瓷晶粒明显长大,同时烧结温度可由1 280℃降低至1 180℃。系统的介电性能和Bi4(Ti1/3Sn2/3)3O12的掺杂量有密切关系。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,体系的居里峰被明显压低和展宽,当掺杂量为2mol%时居里峰变得不明显。当Bi4(Ti1/3Sn2/3)3O12的掺杂量从0.5mol%增加到2mol%,系统的居里温度由131℃升高至139℃。当Bi4(Ti1/3Sn2/3)3O12的掺杂量为1mol%时,钛酸钡基陶瓷介电常数为1 930,介电常数温度变化率为5%(-55℃),13%(134℃),-8%(150℃),满足X8R标准。     

Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷结构和介电性能的影响

本文研究了Bi₂O₃掺杂对Ag(Nb_0.8Ta_0.2)O₃陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi₂O₃的掺杂可以使陶瓷中Ag⁺被还原并析出,且银析出的量随Bi₂O₃掺杂量的增加而不断增加,这可能源自于Bi³⁺对Ag⁺的取代。在一定范围内增大Bi₂O₃掺杂量可提高Ag(Nb_0.8Ta_0.2)O₃陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi₂O₃的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10^-4)。