内含C_(60)掺杂空穴传输层的量子点电致发光器件

聚乙烯咔唑(PVK)中掺入富勒烯(C60)的重量比从0%到10%变化,以研究在空穴传输层中掺杂C60后对量子点电致发光器件性能的影响。掺入C60后的PVK薄膜在氧化铟锡(ITO)基底上均方根粗糙度从3 nm降至1.6 nm。另外,掺入C60后有利于空穴的注入和传输,改善器件中电子和空穴的平衡,提高了器件的效率。     

Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots

The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots （QDs）, makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions axe changed under external electric fields.     

气相沉积法制备多孔ZnO薄膜及其光伏特性

通过气相沉积法, 在大气环境下退火, 制备了多孔ZnO薄膜. 这种多孔ZnO薄膜的制备方法具有成膜过程简单且工艺可精确控制等特点. 将多孔ZnO薄膜用胶体CdSe量子点来敏化获得太阳能电池, 具有1.01%的能量转换效率.     

内含C60掺杂空穴传输层的量子点电致发光器件

聚乙烯咔唑（PVK）中掺入富勒烯（C₆₀）的重量比从0%到10%变化,以研究在空穴传输层中掺杂C₆₀后对量子点电致发光器件性能的影响。掺入C₆₀后的PVK薄膜在氧化铟锡（ITO）基底上均方根粗糙度从3nm降至1.6nm。另外,掺入C₆₀后有利于空穴的注入和传输,改善器件中电子和空穴的平衡,提高了器件的效率。