| 内含C_(60)掺杂空穴传输层的量子点电致发光器件 |
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| 引用本文： | 沈兴超,杨伯平,张辉朝,于永亚,崔一平,张家雨.内含C_(60)掺杂空穴传输层的量子点电致发光器件[J].无机化学学报,2014,30(6):1273-1277. |
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| 作者姓名： | 沈兴超 杨伯平 张辉朝 于永亚 崔一平 张家雨 |
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| 作者单位： | 东南大学 电子科学与工程学院 先进光子学中心, 南京 210096;东南大学 电子科学与工程学院 先进光子学中心, 南京 210096;东南大学 电子科学与工程学院 先进光子学中心, 南京 210096;东南大学 电子科学与工程学院 先进光子学中心, 南京 210096;东南大学 电子科学与工程学院 先进光子学中心, 南京 210096;东南大学 电子科学与工程学院 先进光子学中心, 南京 210096 |
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| 基金项目： | 江苏省科技支撑计划(工业部分)(No.BE2012163)资助项目。 |
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| 摘 要： | 聚乙烯咔唑(PVK)中掺入富勒烯(C60)的重量比从0%到10%变化,以研究在空穴传输层中掺杂C60后对量子点电致发光器件性能的影响。掺入C60后的PVK薄膜在氧化铟锡(ITO)基底上均方根粗糙度从3 nm降至1.6 nm。另外,掺入C60后有利于空穴的注入和传输,改善器件中电子和空穴的平衡,提高了器件的效率。
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| 关 键 词： | 富勒烯 聚乙烯咔唑 量子点电致发光器件 |
| 收稿时间： | 9/9/2013 12:00:00 AM |
| 修稿时间： | 2013/11/4 0:00:00 |
Quantum-Dot Electroluminescence Devices with C60-Doped Hole Transport Layer |
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| SHEN Xing-Chao,YANG Bo-Ping,ZHANG Hui-Chao,YU Yong-Y,CUI Yi-Ping and ZHANG Jia-Yu.Quantum-Dot Electroluminescence Devices with C60-Doped Hole Transport Layer[J].Chinese Journal of Inorganic Chemistry,2014,30(6):1273-1277. |
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| Authors: | SHEN Xing-Chao YANG Bo-Ping ZHANG Hui-Chao YU Yong-Y CUI Yi-Ping and ZHANG Jia-Yu |
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| Institution: | Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China |
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| Abstract: | The effect of fullerene (C60) doping in poly(9-vinylcarbazole)(PVK) on the electroluminescent (EL) properties of quantum dot light-emitting devices was investigated by changing the C60 content from 0wt% to 10wt%. The surface roughness of pure PVK film on ITO substrate was 3 nm, while that of C60 doped PVK film was only 1.6 nm. The doping of C60 in PVK could result in efficient hole injection and transport, and thus the balance of charge carriers and the EL efficiency were improved. |
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| Keywords: | fullerene poly(9-vinylcarbazole) quantum dot light-emitting device |
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