表面增强拉曼散射胶带:一种原位检测平台

基于局域表面等离基元共振的原理,表面增强拉曼光谱(SERS)技术因其具有灵敏度高、使用方便、能提供近场增强的优点,广泛用于催化、光谱电化学、传感等领域[1-2]。表面增强拉曼基底是SERS的核心,硅片、玻璃片是最常用的用于制备SERS基底的衬底材料,然而他们的刚性特征限制了其应用范围。我们提出了一种简单的制备表面增强拉曼散射胶带的方法,利用胶带的粘性特征直接将沉积在刚性硅片表面的纳米结构转移至胶带表面。需要用时直接将胶带撕下来贴在需要检测的位置上,这种表面增强拉曼散射胶带可灵活方便用于固体、液体的原位检测和研究。     

Anisotropic and mutable magnetization in Kondo lattice CeSb_2

We have systematically studied the behaviors of the resistivity and magnetization of CeSb_2 single crystals as a function of temperature and external field. Four anomalies in the resistivity/magnetization-versus-temperature curves are observed at low magnetic field. They are located at 15.5 K, 11.5 K, 9.5 K, and 6.5 K, corresponding to the paramagnetic–magnetically ordered state(MO), MO-antiferromagnetic(AFM), AFM–AFM, and AFM–ferromagnetic(FM) transitions, respectively.The anomaly at 9.5 K is only visible with H‖[010] by magnetic susceptibility measurements, indicating that the AFM–AFM transition only happens along [010] direction in ab-plane. The four magnetic transitions are strongly suppressed by high external field. Finally, the field-temperature phase diagrams of CeSb_2 with different orientations of the applied field in ab-plane are constructed and indicate the highly anisotropic nature of the magnetization of CeSb_2.     

Ab initio study of H/O trapping and clustering on U/Al interface

Al coating on U surfaces is one of the methods to protect U against environmental corrosion. The behaviors of hydrogen and oxygen impurities near the Al/α-U interface have been studied in the density functional theory framework. It turns out that U vacancies tend to segregate to the interface with segregation energies of around 0.5-0.8 eV. The segregated U vacancy can act as a sink for H and O impurities, which is saturated when filled with 8 H or 6 O atoms, respectively.Moreover, the O impurities tend to stay in the Al layer while the H impurities prefer to diffuse into the U lattice, suggesting that the Al coating can play a significant role against oxidation but not against hydrogenation of U.     

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Highly c-axis oriented un-doped zinc oxide（Zn O） thin films, each with a thickness of ～ 100 nm, are deposited on Si（001） substrates by pulsed electron beam deposition at a temperature of ～ 320℃, followed by annealing at 650℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy（XPS）, positron annihilation analysis（PAS）, and electron paramagnetic resonance（EPR） characterizations suggest that the major defects generated in these Zn O films are oxygen vacancies. Photoluminescence（PL） and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped Zn O film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the Zn O films are also discussed.