Effects of BaCu（B2O5 ） addition on sintering temperature and microwave dielectric properties of Ba5Nb4O15–BaWO4 ceramics

The effects of BaCu(B2O5)(BCB) addition on the microstructure, phase formation, and microwave dielectric properties of Ba5Nb4O15–BaWO4ceramic are investigated. As a sintering aid, BaCu(B2O5) ceramic could effectively lower the sintering temperature of Ba5Nb4O15–BaWO4ceramic from 1100?C to 950?C due to the liquid-phase effect. Meanwhile,BaCu(B2O5) addition effectively improves the densification of Ba5Nb4O15–BaWO4ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that Ba5Nb4O15and BaWO4coexist with no crystal phase of BaCu(B2O5) in the sintered ceramics. The Ba5Nb4O15–BaWO4ceramics with 1.0 wt% BaCu(B2O5) sintered at 950?C for 2 h presents good microwave dielectric properties of εr = 19.0, high Q × f of 33802 GHz and low τfof2.5 ppm/?C.     

基于S-O-R模型的价格和评价影响消费者网络购买意愿研究

随着电子商务的迅猛崛起,消费者网络购买行为已经成为当前学术研究和实践关注的热点.本研究基于S-O-R模型,构建网络购物情境下消费者心理和行为反应模型,探讨网络购物中的两个重要信息线索:价格和评价如何通过影响消费者的情绪和感知价值,进而影响其购买意愿的机理.通过一个行为实验同时收集行为和问卷数据,进行实证研究,问卷数据分析结果显示:1)感知价格显著负向影响唤起感、愉悦感和感知价值;感知评价显著正向影响愉悦感和感知价值;2)唤起感显著积极影响愉悦感,感知价值显著积极作用于唤起感和愉悦感;3)感知价值和愉悦感分别显著正向影响购买意愿.     

Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

Effects of BaCu（B2Os） addition on sintering temperature and microwave dielectric properties of BasNb4O15-BaWO4 ceramics

The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.     

The low-temperature sintering and microwave dielectric properties of （Zno.7Mgo.3） TiO3 ceramics with H3BO3

The effects of the addition of H3BO3 on the microstructure, phase formation, and microwave dielectric properties of （Zn0.TMg0.3）TiO3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H3BO3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H3BO3. With the increase in H3BO3 content, the dielectric constant （er） monotonically increases, but the quality factor （Q x f） reaches a maximum at 1 wt% H3BO3, and the apparent density of ZMT ceramics with H3BO3〉 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H3BO3 exhibit excellent microwave dielectric properties： er = 19.8, and Q x f -- 43800 GHz （8.94 GHz）.     

Effects of Rapid Recurrent Thermal Annealing on Giant Magnetoresistance NiFe／Ag Multilayers

NiFe/Ag multilayers were prepared by dc sputtering onto glass-ceramic substrates directly at room temperature. The samples were thermally processed by rapid recurrent thermal anneal (RRTA). We studied the effects of RRTA on giant magnetoresistance (GMR) NiFe/Ag multilayer by contro11ing the anneal temperature as well as the rapid anneal cycle. The samples after three RRTA cycles have a similar annealing temperature dependence of GMR responses to the ordinary annealed samples. With the increasing anneal cycle, the GMR response improved at first and then reached an unexpected high value of 9% before descent rapidly. Microstructure study shows that this effect is ascribed to the transformation of continuous NiFe layer into discontinuous one, and then into a granular like film in a step-by-step way.     

Influences of Bi2O3/V2O5 Additives on the Microstructure and Magnetic Properties of Lithium Ferrite

Lithium ferrite materials with different concentrations of Bi2O3 and V2O5 additives are prepared by the conventional ceramic technique. The x-ray diffraction analysis proves that the additives do not affect the final crystal phase of the lithium ferrite in our testing range. Both Bi2O3 and V2O5 additives could promote densification and lower sintering temperature of the lithium ferrite. The average grain size first increases, and then gradually decreases with the Bi2O3 content. The maximal grain size appears with 0.25 wt% Bi2O3. The average grain size first increases, and then is kept almost unchanged with the V2O5 content. The maximal average grain size of the samples with V2O5 additive is much smaller than that of the samples with Bi2O3 additive. Furthermore, the V2O5 additive more easily enters the crystal lattice of the lithium ferrite than the Bi2O3 additive. These characteristics evidently affect the magnetic properties, such as saturation flux density, ratio of remanence Br to saturation flux density Bs, and coercive force of the lithium ferrite. The mechanisms involved are discussed.     

The low-temperature sintering and microwave dielectric properties of (Zn_(0.7)Mg_(0.3))TiO_3 ceramics with H_3BO_3

The effects of the addition of H 3 BO 3 on the microstructure, phase formation, and microwave dielectric properties of (Zn 0.7 Mg 0.3 )TiO 3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H 3 BO 3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃ due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H 3 BO 3 . With the increase in H 3 BO 3 content, the dielectric constant (ε r ) monotonically increases, but the quality factor (Q × f ) reaches a maximum at 1 wt% H 3 BO 3 , and the apparent density of ZMT ceramics with H 3 BO 3 ≥ 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H 3 BO 3 exhibit excellent microwave dielectric properties: ε r = 19.8, and Q × f = 43800 GHz (8.94 GHz).     

基于logistic模型的我国信息产业演化发展研究

信息产业作为战略性新兴产业,对国民经济的发展发挥着巨大的推动作用.对于信息产业演化发展路径的深入探索,有利于增强信息产业发展战略的科学性和前瞻性.基于logistic成长模型,高精度拟合中国信息产业、信息制造业和信息服务业的演化发展历程,详细揭示中国信息产业及其产业部门的演化发展规律.研究结果表明:我国信息产业及其产业部门的演化发展速度,均符合先慢再快后慢的成长规律;我国信息服务业的发展速度和发展潜力均强于信息制造业,但信息制造业的业态总量远超过信息服务业;总体而言,我国信息产业及其产业部门目前正处于成长后期,发展势头强劲.