Interaction induced non-reciprocal three-level quantum transport

Besides its fundamental importance, non-reciprocity has also found many potential applications in quantum technology. Recently, many quantum systems have been proposed to realize non-reciprocity, but stable non-reciprocal process is still experimentally difficult in general, due to the needed cyclical interactions in artificial systems or operational difficulties in solid state materials. Here, we propose a new kind of interaction induced non-reciprocal operation, based on the conventional stimulated-Raman-adiabatic-passage(STIRAP) setup, which removes the experimental difficulty of requiring cyclical interaction, and thus it is directly implementable in various quantum systems. Furthermore, we also illustrate our proposal on a chain of three coupled superconducting transmons, which can lead to a non-reciprocal circulator with high fidelity without a ring coupling configuration as in the previous schemes or implementations. Therefore, our protocol provides a promising way to explore fundamental non-reciprocal quantum physics as well as realize non-reciprocal quantum device.     

Na原子链表面等离激元特性的含时密度泛函研究

本文用含时密度泛函理论研究了线性Na原子链的表面等离激元机理.主要在原子尺度下模拟计算了体系随着原子数增加及原子间距变化的集体激发过程.研究发现线性原子链有一个普遍的特性——存在一个纵模和两个横模.两个横模一般在实验上很难被观测到.纵模随着原子链长度增加,能量红移的同时,该纵模主峰的强度呈线性增长.随着原子个数的增加,端点模式(TE)开始蓝移,能量和偶极强度都逐渐趋向饱和.横模能量被劈裂的原因概括如下:(一)每个位置的电子受到的势不同,在两端的电子受到的势要比在中间的电子受到的势要高,因此两端的电荷积累也比中间多;(二)端点存在悬挂键,所以中间的电子-电子间相互作用与端点的不一样,这两方面又都与原子间距d有关.     

锥形透镜光纤聚焦特性研究

锥形透镜光纤(TLF)是实现光纤与平面光波光路(PLC)芯片高效耦合的核心元件。了解和掌握其聚焦特性是指导平面光波光路尾纤封装技术的关键。给出了表征锥形透镜光纤聚焦特性的两个参量出射光斑直径和远场发散角的理论分析模型,其误差小于1.14%;采用光束传播法数值模拟了锥形透镜光纤中的光波传输和模斑的演化,确定了锥形透镜光纤端面出射光斑的大小;优化锥形透镜光纤结构参量为:拉锥长度300μm,锥角0.733°,透镜曲率半径13.485μm;建立了基于数字摄像机的锥形透镜光纤出射光场测试系统,提出了物理光学反向推演法,计算出锥形透镜光纤聚焦光斑尺寸和远场发散角。理论与实验结果有着良好的一致:对于相同结构参量的锥形透镜光纤,实验反推法得到的出射光斑尺寸与理论值相比误差为3.15%,远场发散角误差为3.67%。     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.     

On removable even circuits in graphs

Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected.     

ASYMPTOTIC NORMALITY OF KERNEL ESTIMATES OF A DENSITY FUNCTION UNDER ASSOCIATION DEPENDENCE

Let {X_n, n≥1} be a strictly stationary sequence of random variables, whichare either associated or negatively associated, f(·) be their common density. In this paper,the author shows a central limit theorem for a kernel estimate of f(·) under certain regularconditions.     

Anti-BZ-Structure in Effect Algebras

The definitions of sharply approximating effect algebras, anti-BZ-effect algebras, central approximating effect algebras, and S-anti-BZ-effect algebras are given, the relationships between sharply approximating effect algebras and anti-BZ-effect algebras, between central approximating effect algebras and anti-BZ-effect algebras are established, and the set of anti-BZ-sharp elements in S-anti-BZ-effect algebras is proved to be an orthomodular lattice.     

Upon the removal of the edges of a 1-factor from an even circuit in a 2-connected graph

Let G be a 2-connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G with factorization F={F₁,F₂} such that G−E(F₁) is 2-connected.     

Infinite-dimensional linear groups with restrictions on subgroups that are not soluble <Emphasis Type="Italic">A</Emphasis><Subscript>3</Subscript>-groups

We are concerned with infinite-dimensional locally soluble linear groups of infinite central dimension that are not soluble A₃-groups and all of whose proper subgroups, which are not soluble A₃-groups, have finite central dimension. The structure of groups in this class is described. The case of infinite-dimensional locally nilpotent linear groups satisfying the specified conditions is treated separately. A similar problem is solved for infinite-dimensional locally soluble linear groups of infinite fundamental dimension that are not soluble A₃-groups and all of whose proper subgroups, which are not soluble A₃-groups, have finite fundamental dimension. __________ Translated from Algebra i Logika, Vol. 46, No. 5, pp. 548–559, September–October, 2007.