Effects of preparation parameters on growth and properties of β-Ga2O3 film

The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.     

新型卤代甲氧基二苯甲酮类化合物的合成及其对H2O2致人脐静脉内皮损伤的保护研究

以甲氧基和卤素取代的苯甲酸为起始原料,经过羧酸酰基化、傅克酰基化、芳香环卤代等反应合成了12个卤代甲氧基二苯甲酮类化合物,其结构经ESI-MS、1H NMR、13C NMR进行了表征和确认。通过考察其对H2O2诱导的人脐静脉内皮细胞(HUVECs)损伤的保护活性,讨论了此类化合物的构效关系。体外活性实验表明,浓度为12.5μmol/L时,化合物7a和9a对HUVECs有一定的保护活性,保护率超过50%。     

硼酸盐晶体及其溶液结构研究现状

硼酸盐结构十分复杂,主要针对硼酸盐晶体结构和硼酸盐水溶液结构问题,总结了水合硼酸盐晶体结构及其结晶行为,归纳了硼酸盐水溶液中硼酸盐的主要存在形式及其结构研究,并侧重介绍和评价了电导/电势滴定、红外(IR)、拉曼光谱(Raman)、11B核磁共振等方法在硼酸盐溶液结构研究方面的进展,指出了未来的发展方向.     

基于演化博弈视角的植物品种权价值链合作伙伴行为协调机制研究

本文提出了植物品种权价值链合作伙伴行为协调的概念,应用演化博弈的双种群理论,研究了植物品种权价值链合作伙伴行为协调的博弈演化过程及影响因素。研究表明,协调演化方向受协调成本、协调收益、超额收益分配比例、成本分摊比例、单独合作收益、背叛收益和奖惩金额等因素的影响。提高协调收益和单方面合作收益,降低协调成本和背叛收益,保持合作双方支付的成本与双方合作超额收益的分配正相关,建立合理的超额收益分配机制,加强外部监管和惩罚力度,将会促进植物品种权价值链合作伙伴行为向全面协调的方向演化。     

双辉等离子体表面冶金金属化CVD金刚石自支撑膜研究

采用双辉等离子表面冶金技术,在金刚石自支撑膜表面制备了W金属层.借助扫描电子显微镜(SEM)、能谱仪(EDS)和X-射线衍射仪(XRD)等分别对金属化后的金刚石膜的微观形貌、元素分布及物相组成进行了表征与分析;并通过测试Ag-Cu钎焊的金刚石膜-硬质合金刀片样品的剪切强度,评价金属层与金刚石膜的结合强度.实验结果表明:所制备的W金属层连续、致密,由大量纳米尺度的颗粒状团聚物构成;在金属层与金刚石界面一定深度区域内,存在W和C元素的相互扩散,并且反应生成了WC、W2C等金属碳化物颗粒,表明金属层与金刚石膜之间已形成了牢固的化学键合.     

混合染料荧光选择性增强受激拉曼散射Stokes波

报道用不同混合比的罗丹明6G(R6G)和罗丹明B(RB)混合染料荧光选择性放大CCl₄和苯的受激拉曼散射不同阶次Stokes波。CCl₄二至五阶Stokes波分别被混合摩尔比为20∶2,20∶13及20∶40(R6g∶RB)的R6G和RB的混合染料荧光放大;一阶Stokes波强度被混合溶液削弱。这是由于到二至五阶Stokes波分别位于以上三种混合溶液荧光峰附近,并且都远离了R6G和RB的吸收峰,混合溶液的荧光增强作用大于吸收作用,因此这几阶Stokes被混合溶液荧光放大。而CCl₄的一阶Stokes位于RB吸收峰附近,又远离各混合溶液荧光峰,溶液的吸收作用大于荧光增强作用,导致一阶Stokes被混合溶液削弱。文章还报道了苯的一、二和三阶Stokes波分别被不同混合比的R6G和DCM的混合乙醇溶液放大,并预测了该方法应用前景。     

构造常数数列解决数列问题

2008年全国高中数学联赛湖北省预赛试题中有这样一道题：设数列{an}满足：a1=1，a2=2，an＋2/an=an＋1^2＋1/an^2＋1（n≥1）.     

First-Principles Calculation for the Electron-Phonon Coupling Constant of Superconducting MgB2

We use a first-principles plane wave method with the new relativistic analytic pseudopotential of the Hartwigsen,Goedecker and Hurter (HGH) scheme and the pseudopotential of the Troullier-Martins scheme to calculate the eleetron-phonon coupling constant λ of superconducting MgB2. The calculated results show that there is a peak at about 300-350cm^-1 in the eleetron-phonon spectral functional α2F(ω), duo to the coupling of the electrons to the acoustic phonon, and the relativistic effect appears in the high frequencies zone. All the results agree well with the present and previous experimental data,     

First-Principles Calculations of Elastic Constants of Superconducting MgB2

The five independent elastic constants of superconducting MgB2 are obtained using the first-principles plane wave method with the new relativistic analytic pseudopotential of the Hartwigsen-Goedecker-Hutter (HGH) scheme in the frame of local density approximation. The dependences of bulk modulus on temperature and pressure are also obtained. It is suggested that the HGH-type pseudopotentials are successful in investigating the ground-state mechanical properties of any solids.     

准一维电子通道中声电电流的理论计算

表面声波在GaAs/Al _x Ga_1-x As异质结表面上沿由分裂门产生的准一维电子通道方向传 播时，在通道中诱导产生声电电流.采用WKB近似，计算了只有一个电子被量子阱俘获时的声电电流；并在此基础上，详细讨论了表面声波的频率和功率，以及门电压和源漏偏压对声电电流的影响. 关键词： 表面声波 准一维电子通道 量子阱 声电电流