Optical and transport phenomena in CdO:La films prepared by sol-gel method

A series of lightly La-doped CdO thin films (1%, 5%, and 7%) have been prepared by a spin coater sol-gel technique on amorphous glass and crystalline Si substrates. Those prepared films were studied by X-ray diffraction (XRD), UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. The investigation shows that La doping grows slightly the CdO lattice parameter and decreases the intrinsic energygap from 2.1 eV to 1.7 eV. The optical properties were easily explained in the framework of classical Drude theory and thus all the corresponding parameters were determined. The electrical behaviour of the samples shows that they are degenerate semiconductors until the atomic percentage of the La dopant was 7% then the sample was converted into a non-degenerate semiconductor. Generally, it was observed that the conductivity and mobility of the carriers were decreased by increasing the La content in the CdO film samples.     

介孔掺镧纳米晶TiO_2瞬态光伏与表面光声特性

结合瞬态光伏与表面光声技术,研究介孔掺镧nano-TiO2光生载流子分离与复合过程及其能量转换机制.结果表明:锐钛矿中两种不同光伏特性的缺陷态具有光生载流子扩散距离短,复合速度快的特点;镧掺杂增加体缺陷态对于光伏效应的贡献,但在某种程度上抑制主带隙的电荷分离;模板剂种类对于主带隙电子-空穴对的分离与复合过程,以及亚带隙无辐射跃迁引起的晶格振动均有显著的影响.结果证实了样品表面光声与瞬态光伏现象之间存在明显的能量互补关系.     

镧掺杂BaSnO3薄膜的电学和光学特性

利用射频磁控溅射法在(LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (001)单晶基底上生长了镧掺杂BaSnO₃外延薄膜. 通过Hall效应和热电势测量证实了镧掺杂BaSnO₃薄膜具有n型简并半导体特征, 并且基于载流子浓度和Seebeck系数计算出电子的有效质量为0.31m₀ (m₀为自由电子质量). 镧掺杂BaSnO₃薄膜在可见波段具有良好的透明性(透过率大于73%). 基于介电模型对薄膜的透过率曲线进行拟合, 从拟合结果中不仅得到了薄膜的厚度为781.2 nm, 能带宽度为3.43 eV、 带尾宽度为0.27 eV和复光学介电常数随波长的变化规律, 而且也强力地支持了基于电学参数计算电子有效质量的正确性.     

La掺杂和空位对ZnS磁性和光学性能影响的第一性原理研究

利用密度泛函理论框架下的平面波超软赝势法,通过第一性原理对La掺杂与Zn空位(V_(Zn))及La掺杂与S空位(V_S)共存的ZnS体系的电子结构、磁性机理、形成能及吸收光谱进行了研究.结果表明, La掺杂与空位(V_(Zn)或V_S)的空间位置最近时,掺杂体系的形成能最低,体系最稳定.另外,La掺杂与Zn空位共存时,体系具有磁性,且体系的净磁矩与La原子与Zn空位的相对位置有关;La掺杂与S空位共存时,掺杂体系无磁性,但此时体系的禁带宽度最窄且吸收光谱红移最显著.     

La掺杂TiO2薄膜的制备及其光电流研究

采用溶胶凝胶-浸渍提拉法在ITO导电玻璃表面制备了纯TiO2薄膜和La掺杂TiO2薄膜,对其进行350℃、450℃、550℃保温2h热处理.利用XRD、SEM、EDS、XPS对样品结构、形貌、成分进行表征,利用电化学工作站对薄膜进行光电流测试,研究了La掺杂以及不同热处理温度对TiO2薄膜结构及光电流的影响.结果表明:La掺杂有细化TiO2晶粒和抑制锐钛矿相向金红石相转变的作用.随热处理温度提高,纯TiO2薄膜与La掺杂TiO2薄膜光电流密度均先增大后减小,450℃热处理后纯Ti02薄膜光电流密度为180 μA·cm-2,此温度下La掺杂TiO2薄膜光电流密度为650 μA·cm-2,是纯TiO2薄膜的3.6倍.     

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

La-doped HfO₂ gate dielectric thin films have been deposited on Si substrates using La(acac)₃ and Hf(acac)₄ (acac = 2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO₂ films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5 mol% is involved in the films. The films show smaller roughness of ∼0.5 nm and improved thermal stability up to 750 °C. The La-doped HfO₂ films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1 MHz and a band gap of 5.6 eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2 nm has been obtained, but with a large leakage current density of 3 A/cm² at V_g = 1V + V_fb. MOCVD-derived La-doped HfO₂ is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.     

Effect of La doping in the multiferroic compound BiFeO3

We have performed magnetization and magnetocapacitance measurements on ceramic samples of the multiferroic series Bi_1−xLa_xFeO₃ for 0≤x≤.0.25. We show that doping with La reduces the transition magnetic field from the spatially modulated state to a homogenous one and increases the magnetocapacitance, these effects being the strongest for x=0.15, which is the highest concentration for maintaining the non-centrosymmetric rhomboedral structure (R3c) of BiFeO₃. For highest La content (x≥0.17), analysis of the XRD patterns shows that the lattice symmetry gradually changes to orthorhombic (C222), giving rise to an enhancement of the latent magnetization and to a drop of the magnetodielectric constant.     

Study on mechanism of photocatalytic performance of La-doped TiO2/Ti photoelectrodes by theoretical and experimental methods

TiO₂ photoelectrodes with various nanostructures have been successfully prepared by the anodization method. The morphology, microstructure and optical properties of as-prepared photoelectrodes were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet/visible light diffuse reflectance spectra (UV/vis/DRS), surface photovoltage spectroscopy (SPS) and photocurrent. The electronic structure and optical properties of La doped/undoped TiO₂ photoelectrodes with different crystal structures were calculated by the density function theory. The photocatalytic and photoelectrocatalytic activities of as-prepared photoelectrodes were evaluated. The results showed that the anodization potentials played a crucial role in the surface morphology and microstructure. Both results of theoretical calculations and experimental tests demonstrated that La-doped photoelectrodes were more sensitive to light than undoped one. The difference of photoelectrodes performance was ascribed to the crystal configuration, impurity energy levels and long-range orientation moving of photogenerated carriers.     

Effect of La doping on microstructure of SnO2 nanopowders prepared by co-precipitation method

A series of La-doped SnO₂ nanopowders with various dopant concentrations were prepared by chemical co-precipitation technique, and the nanopowders prepared were characterized by differential scanning calorimeter (DSC), thermo-gravimetric (TG), X-ray diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The results show that La doping can obviously prevent the growth of nanosized SnO₂ crystallites. When the La concentration reaches and surpasses 5 at.%, SnO₂ crystallite size reaches a minimum value and remains almost constant. With the increase of La concentration, La tends to dissolve in the bulk phase of SnO₂ to form solid solution below 10 at.% addition and then starts to disperse onto the surface of the solid solution as a monolayer above 10 at.%. The effect of La doping on hindering crystallite growth can be attributed to the solute drag and lattice distortion resulting from La dissolving in the bulk phase of SnO₂ to form solid solution, rather than the monolayer of La on the surfaces of the SnO₂ powders.     

Reversible alternation between bipolar and unipolar resistive switching in La-SrTiO_3 thin films

The alternation from bipolar to unipolar resistive switching is observed in perovskite La0.01Sr0.99TiO3thin films.These two switching modes can be activated separately depending on the compliance current(Icomp)during the electroforming process:with a higher Icomp(5 mA)the unipolar resistance switching behavior is measured,while the bipolar resistance switching behavior is observed with a lower Icomp(1 mA).On the basis of I–V characteristics,the switching mechanisms for the URS and BRS modes are considered as being a change in the Schottky-like barrier height and/or width at the Pt/La-SrTiO3interface and the formation and disruption of conduction filaments,respectively.