Entangled States Based on Two Coherent States 3π/2 out of Phase

Entangled states based on two coherent states 3π/2 out of phase with each other, i.e. ｜α〉 and e^iФ｜-iα〉, as well as on a special state with a relative phase Ф = ｜α｜^2, are constructed. By analysing the amount of entanglement it is evident that entangled states based on this special state can be used as an excellent resource for quantum teleportation. It is also revealed that these entangled states possess some nonclassical features.     

在高压下双原子分子的行为

位于美国华盛顿洲的Carnegie研究所的A．Goncharov教授的他的合作者美国Lawrence Livermore国家实验室的J．Crowhurst教授共同进行了一项实验．他们将许多种类的双原子分子，例如氢、氘和氮等挤压人一个菱形的砧格内，然后观察它们在高温高压下的行为．在实验中他们不断地改变温度与压强这两个参数，使分子样品常常可以从流体转变为晶体，或者反过来从晶体变为流体，甚至于让整个分子解体．他们的具体实验手段是利用近红外激光对样品加热，再利用拉曼光谱仪来测定分子在各种条件下的量子振动激发态，并细缄地记录下各条谱线的频率与伸缩模的线宽。     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

用一类特定的双耦合Duffing振子系统检测强色噪声背景中的周期信号

通过分析耦合参数作用、系统所呈现大尺度周期相态的复杂性以及与系统在无噪声条件下状态的比较，得出耦合振子系统的动力学行为比同类单振子系统的复杂，周期相态更稳定、抗噪能力更强.用构造的一类含特定恢复力项双中强度耦合Duffing振子系统检测色噪声背景中的谐波、方波信号，信噪比分别达到-111.0和-108.45dB. 关键词： 特定双耦合 Duffing振子系统 色噪声 周期信号 信噪比     

Au-Zn,TiPdAu电极对InGaAsP/InP双异质结发光管可靠性影响的研究

本文用AES研究了P-InP/TiPdAu热处理前后的界面特性,结果表明:TiPd层对Au的内扩散和In的扩散有阻挡作用。以TiPdAu作InGaAsP/InP双异质结发光管的p面电极、镀Au作热沉,采用In焊料,研究了器件的可靠性问题,在室温大气气氛中;70℃存储,70～80℃带电老化,三种条件下长时间考核结果表明:器件的I-V特性正常,末见正向压降明显变化。还比较了Au-Zn材料作p面电极用TiPdAu作肖脱基势垒限制层制成的器件和用TiPdAu作电极材料制成的深Zn扩散型器件在老化过程中的特性变化,后二种结构的器件,在长期老化过程中,有源区中有大面积DSD生长和增殖。     

WO3掺杂的La2/3Sr1/3MnO3电输运与磁电阻特性

通过溶胶-凝胶法制备了La2／3Sr1／3MnO3＋xWO3（x=0～25％）系列多晶陶瓷样品．结果表明。随着WO3掺杂量的增加，样品的电阻率增大，金属-绝缘体相变温度（Tp）值下降．在1．4T磁场下，当0≤x≤12．5％时，样品的室温磁电阻值从5％增大到15％，提高了200％．当12．5％〈x≤25％时，室温磁电阻值从15％降低到0．这对磁电阻材料在室温下的应用提供实验依据．     

Construction of 2Ⅲ^[m-（m-k）] Designs with the Maximum Number of Clear Two-factor Interactions

It is useful to know the maximum number of clear two-factor interactions in a_Ⅲ~(m-(m-k))design.This paper provides a method to construct a 2_Ⅲ~(m-(m-k))design with the maximum number of clear two-factorinteractions.And it is proved that the resulting designs have more clear two-factor interactions than thoseconstructed by Tang et al.Moreover,the designs constructed are shown to have concise grid representations.