基于氯化血红素复合材料的过氧亚硝酸阴离子电化学传感器的构建

构建了一种基于氯化血红素/金纳米粒子/聚三聚氰胺/多壁碳纳米管复合材料修饰玻碳电极的过氧亚硝酸阴离子电化学传感器,并成功用于过氧亚硝酸阴离子的检测.采用循环伏安法和电流-时间曲线考察了过氧亚硝酸阴离子在传感器上的电化学行为,并对传感器的制备条件及过氧亚硝酸阴离子的检测条件进行了优化.结果表明,碳纳米管滴涂量为5 μL,金沉积时间为20 s,工作电位为0.8V时,所制传感器对过氧亚硝酸阴离子的响应最大.在优化实验条件下,此传感器检测过氧亚硝酸阴离子的线性范围为1.0×10-5～3.5×10-4 mol/L和3.5×10-4～1.1×10-3 mol/L,灵敏度为0.13 A/(mol/L),检出限为1.2×10-7 mol/L(S/N=3).     

吡嗪缩氨基脲配体铜/锌配合物的晶体结构及荧光性质

合成并通过单晶X射线衍射、元素分析及红外光谱表征了配合物[Cu₂（L）₂Br₂]·CH₃OH（1）和[Zn₂（L）₂（CH₃COO）₂]·2CH₃OH（2）的结构（HL为3-乙基-2-乙酰吡嗪缩4-苯基氨基脲）。单晶衍射结果表明,配合物1中,中心Cu（Ⅱ）离子与来自1个三齿缩氨基脲配体阴离子和2个μ²-桥联的溴离子配位,拥有扭曲的四方锥配位构型。配合物2中Zn（Ⅱ）离子配位构型与配合物1中Cu（Ⅱ）离子的相同,周围的供体原子为N₂O₃。配合物2中的2个醋酸根的配位模式不尽相同,其中一个为μ-OCO双齿桥联,另外一个为μ-O单齿桥联。甲醇溶液中,配合物1和2的荧光发射峰与配体HL相似。     

新颖光控Dex-H交联胶束药物释放体系的制备及协同抗肿瘤性能

合成了一种基于血红素中双键交联的葡聚糖(Dex)载药(5-氟尿嘧啶)胶束(Dex-H交联胶束).接枝在葡聚糖上的血红素不仅可以用作光控开关控制5-氟尿嘧啶在定点部位的快速释放,而且可以同时在光照下作为光动力学疗法的光敏剂产生单线态氧,实现协同抗肿瘤作用.交联后的胶束具有良好生物相容性,同时,稳定性也相应增强,高度稀释后仍能保持稳定,有望在体内安全运输.采用3-(4,5-二甲基噻唑-2)-2,5-二甲苯基四氨唑溴盐(MTT)和荧光显微镜观察发现,激光照射下载药交联胶束表现出高效的抗癌效果,具有协同抗肿瘤作用.     

沉淀介质对共沉淀法制备(Bi,Pb)2223先驱粉的影响

本文利用物理化学原理对改进的共沉淀法和传统的共沉淀法所使用的介质进行了对比研究.通过比较PH值在以水为介质的传统共沉淀法和改进的以乙醇为介质的共沉淀法的化学计量比的不同影响,我们发现传统共沉淀法不能找到合适的PH值范围来使各种金属离子完全共沉淀,也就难以维持原始的化学计量比,而改进的共沉淀法有很宽的PH值范围(PH=3～7.4), 能使所要沉淀的各种金属离子完全共沉淀并维持原始的化学计量比.对改进的共沉淀法制备的前驱粉经过X光衍射分析显示,其相组成合适,扫描电镜分析显示前驱粉完全满足制备超导(Bi,Pb)2223带材的需要.     

In-Situ High Pressure Raman Spectrum and Electrical Property of PbMoO4

In-situ high pressure Raman spectra and electrical conductivity measurements of scheelite-structure compound PbMoO4 are presented. The Raman spectrum of PbMoO4 is determined up to 26.5 GPa on a powdered sample in a diamond anvil cell （DAC） under nonhydrostatic conditions. The PbMoO4 gradully experiences the trans- formation from the crystal to amorphous between 9.2 and 12.5 GPa. The crystal to amorphous transition may be due to the mechanical deformation and the crystalographic transformation. Furthermore, the electrical conductivity of PbMoO4 is in situ measured accurately using a microcircuit fabricated on a DAC based on the van der Pauw method. The results show that the electrical conductivity of PbMoO4 increases with increases of pressure and temperature. At 26.5 GPa, the electrical conductivity value of PbMoO4 at 295K is 1.93 - 10-4 S/cm, while it raises by one order of magnitude at 430K and reached 3.33 - 10-3 S/cm. However, at 430K, compared with the electrical conductivity value of PbMoO4 at 26.5 GPa, it drops by about two order magnitude at 7.4 GPa and achieves 2.81 × 10^-5 S/cm. This indicates that the effect of pressure on the electrical conductivity of PbMoO4 is more obvious than that of temperature.     

紫外激光和压力共同作用下C60-peapod的聚合相变研究

采用气相扩散方法将C₆₀分子填充到单壁碳纳米管(SWNTs)中，制备出高填充比率的豆荚形纳米材料C₆₀@SWNT，又称为peapod.用金刚石对顶砧(DAC)装置获得高压，在高压下同时利用紫外激光处理样品，通过激光和压力的共同作用研究了C₆₀分子在碳管内的聚合相变.在21.5GPa高压下，同时紫外激光(325nm)照射30min后，拉曼光谱表明C₆₀分子在碳管内发生了聚合，形成一维链状O相聚合结构，且该相变是不可逆的. 关键词： 60 peapod')" href="#">C₆₀ peapod 紫外激光 高压 拉曼光谱     

Fabrication of Two-Dimensional Photonic Crystals with Controlled Defects by Combination of Holographic Lithography and Two-Photon Polymerization

A new ternary photopolymer system is used in fabricating photonic crystals （PhCs） with controlled defects by combination of single-photon and two-photon photopolymerization. The former process can produce PhCs in one-step recording with a low-power （tens mW） continuous-wave laser at 532nm, while the latter can create desired defects. The preparation of the material, the optical setup and the preliminary experimental results are given. Compared with other methods, this approach is much more accessible and convenient for use of visible light and has advantages of making PhCs in a large scale quickly and economicaJly and introducing any defects exactly, especially for three-dimensional structures.     

Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well （MQW） ultraviolet light-emltting diodes （UV-LEDs） at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.     

傅里叶望远镜重构图像虚像分析

研究了采用T型激光发射阵列情况下傅里叶望远镜重构图像的虚像问题, 基于系统成像基本原理, 明确了虚像的来源. 分析认为, 发射光束在x和y轴扫描时, 在俯仰角误差的作用下, 抽取目标的空间频率和设定值之间存在一定的偏差; 当进行轴向和象限相位闭合、计算目标的单一傅里叶分量时, 该偏差会对频谱的频移造成随机的相位影响, 反映在空域上使得重构图像存在虚影现象. 在不同扫描方式情况下, 采用下一步外场实验参数, 通过计算机模拟证实了上述分析的正确性.     

氘氚聚变中子发生器旋转氚靶传热特性研究

强流氘氚中子发生器可用于模拟聚变堆中子环境, 对于开展聚变堆包层材料相关实验研究具有重要意义. 本文提出了一种用于10¹² n·^-1量级氘氚中子发生器HINEG (high intensity neutron generator)的旋转氚靶系统设计方案, 并对其技术难点和强化传热方法进行了介绍. 为考查该氚靶系统的传热特性, 利用Computational Fluid Dynamics方法对冷却水层厚度、冷却水流速和氚靶系统旋转速度对靶面冷却的影响进行了分析, 并对不同热功率密度下靶面的传热过程进行了研究. 结果显示, 大的水层厚度、大的冷却水流速和高的靶系统旋转速度有利于靶面的冷却, 但水层厚度和水流速的变化对靶面传热影响较小. 一定条件下靶面所承受的热功率密度不能超过某个限值.