广义α-stable过程自相交局部时增量的Holder律及重点

文研究了 N 指标 d 维广义α-stable过程自相交局部时增量的Holder律. 并利用所得自相交局部时的性质, 证明了该过程重点的存在性, 得到了该过程多重时的Hausdorff维数及测度的下界.所得结论包含并推广了广义布朗单及stable单相应的结果.     

均值自洽理论与多晶本构模拟

本文提出了一种多晶体本构关系的近似理论分析框架——均值自洽模式,将仅适用于球形或椭球形固连夹杂均匀变形的Hill自洽模型推广到适用于任意形状夹杂(固连或滑错)的情况.立方体晶粒多晶体和界面可自由滑错球形晶粒多晶体的本构模拟结果表明了该理论的合理性与可行性.     

非包覆型油井水泥自修复剂的制备与评价

采用反向悬浮聚合法,丙烯酸(AA)和丙烯酰胺(AM)为单体,过硫酸钾（KBS）作引发剂,N,N-亚甲基双丙烯酰胺(MBA)作交联剂,制备了一种非包覆遇水膨胀型自修复剂LF-1,其结构经SEM和IR表征。结果表明,LF-1分散均匀,表观形态呈多孔、粗糙褶皱状。将2%LF-1加入水泥浆中,水泥浆流动度为20.1 cm,失水52 mL,稠化时间217 min;用5000 mg/L的盐水养护造缝水泥石,12 h内即无渗透性;水泥石24 h抗压强度为16.1 MPa,抗折强度为4.92 MPa。      

Solving Non-Isospectral mKdV Equation and Sine-Gordon Equation Hierarchies with Self-Consistent Sources via Inverse Scattering Transform

N-soliton solutions of the hierarchy of non-isospectral mKdV equation with self-consistent sources and the hierarchy of non-isospectral sine-Gordon equation with self-consistent sources are obtained via the inverse scattering transform.     

Integrable Rosochatius Deformations for an Integrable Couplings of CKdV Equation Hierarchy

We propose a method to construct the integrable Rosochatius deformations for an integrable couplings equations hierarchy. As applications, the integrable Rosochatius deformations of the coupled CKdV hierarchy with self-consistent sources and its Lax representation are presented.     

Permanent Magnetic Properties of Melt-Spun YCo5Cx Ribbons

Ribbons of nominal compositions YCo5 Cx （x = 0, 0.2, 0.4, 0.6） are prepared by melt spinning at surface velocities v = 5, 10, 15, 20, 25, 30 and 35 m/s. YCo5 ribbon is crystallized in a single YCo5 phase of hexagonal CaCu5 structure. A small quantity of YCoC2 phase appears in the ribbons with C addition besides the YCo5 phase. With the increase of x the lattice constant c increases and a along with the unit cell volume decreases. The largest values of iHc = 888 kA/m and （BH）max = 58.4 k Jim3 at present for the YCo5 ribbon system were obtained with x = 0.4 and v = 20 m/s. The improvement of the permanent magnetic properties is rooted in the refinement of the microstructure and the appearance of the YCoC2 phase which can act as domain wall pinning centers.     

Effect of Annealing on Microstructure and Electrical Characteristics of Doped Poly （3-Hexylthiophene） Films

The effect of annealing on the microstructure and electrical characteristics of poly （3-hexylthiophene） （P3HT） films doped with very small amounts of the electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4-TCNQ） is studied. X-ray diffraction and UV-vis spectrum studies show that unlike the pure P3HT film, the thermal treatment on the doped fihns under an Ar atmosphere can effectively enhance the crystalline order of P3HT films, as well as successfully facilitate the orientation of the polymer chains. This improvement is attributed to the electrostatic force between P3HT and F4-TCNQ molecules. This force induces the polymer chains to crystallize and orient during the annealing process. As a result, annealing significantly improves performance, especially for the Ion/Ioff ratio of the TFTs based on the doped P3HT films.     

Intensity Distribution and Phase Vortices of Speckle Fields Generated by Multi-Aperture Random Scattering Screens

The intensity distribution and phase vortices of the speckle fields generated by multi-aperture random scattering screens are simulated, and it is found that the vortices exhibit layer-like structures and the dislocation phenomena occur in the local phase patterns produced by the two-pinhole aperture, whose phase distributions appear as striped structures. For three- or four-pinhole aperture, there are many circular bright spots appearing in the speckle grains, and there is one vortex between the neighboring circular bright spots. The positive and negative phase vortex lattices appear in the phase distributions, and the regions circled by the isothetic phase lines form irregular quadrilaterals or hexagons. Moreover, the relative positions of the vortices or bright spots can be adjusted by changing those of the pinhole apertures.     

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors （MOSFET） based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.     

大尺寸单元自组装准晶研究评述

不同于传统的晶体,准晶由非单一的结构单元以一种非重复的方式铺满空间而构成.准晶的形成依赖于短程序和长程序之间微妙的协同,因此准晶常常只在很窄的参数窗口内能得到.近年来,人们利用纳米以至微米级的结构单元,通过溶液中自组装或者在模板上生长,成功地获得了多种大尺寸结构单元的准晶结构.近年的研究还发现,在自然界的矿物中和中世纪伊斯兰建筑装饰上都能找到准晶结构.对准晶结构的多角度、多学科探索,有助于实现准晶的人工设计和生长.