Al-DLC薄膜结构及其在水介质下摩擦学性能研究

采用磁控溅射技术,以Al为溅射靶材,甲烷为溅射气体,在不同射频功率下制备了一系列Al含量不同的类金刚石碳基薄膜(AL-DLC).分析了Al含量对薄膜成分、结构及机械性能的影响,并探讨了其在空气和水介质下的摩擦磨损行为.结果表明:Al掺杂使得薄膜中sp~3-C的生长受到抑制,sp~2-C增加,表面吸附水分子能力变强,在水介质摩擦过程中的剪切阻力变小,从而使得摩擦磨损减小.通过调整射频功率可以对薄膜中Al含量进行调控,在最优Al含量时,Al-DLC在空气和水介质中均具有优异的摩擦学性能.     

装备经费预算项目组合优化决策模型研究

应用项目组合管理理论,综合考虑装备建设的实际需要与经费供给的可能性,建立以预期军事效益最大为目标,以装备经费预算控制指标约束、项目关系约束和项目可分解约束的装备经费预算项目组合优化决策模型。所建立的模型为装备经费预算编制工作提供了可行的决策技术方法,有效增强了装备经费预算编制的科学性、公正性和透明度。     

大型平面阵列天线辐射方向图的小阵外推计算和综合方法

基于子阵思想,小型阵列的单元辐射场等效大型阵列中相似环境下单元的辐射场,利用叠加定理计算大型阵的总辐射场.基于此方法和平面阵的辐射机理,提出运用小型直线阵外推计算大型平面阵辐射场的方法.有效地减小了计算量.利用此方法结合遗传算法通过优化单元的馈电幅度,综合了10×10元低副瓣微带贴片平面阵列天线,结果与HFSS仿真结果吻合良好.     

First-Principles Study of Geometries,Stabilities and Electronic Properties of Ca2Sin （n=1-11） Clusters

The equilibrium geometries, relative stabilities, and electronic properties of Ca2Sin （n = 1-11） clusters have been systematically investigated by using the density function theory at the 6-311G （d） level The optimized geometries indicate that the most stable isomers have three-dimensional structures for n = 3-11. The electronic properties of Ca2 Sin （n = 1-11） dusters axe obtained through the analysis of the natural charge population, natural electron configuration, vertical ionization potential, and vertical electron affinity. The results show that the charges in corresponding Ca2Sin clusters transfer from the Ca atoms to the Sin host. Based on the obtained lowest-energy geometries, the size dependence of cluster properties, such as averaged binding energies, fragmentation energies, second-order energy differences, HOMO- LUMO gaps and chemical hardness, are deeply discussed.     

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.     

Electronic and optical properties of an intrinsic type-I band alignment ZrS_2/SnS_2 van der Waals heterostructure for optoelectronic devices

The electronic and optical properties of the ZrS_2/SnS_2 van der Waals heterostructure have been investigated.We find out that the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in the heterostructure can be enhanced to the amount of 106 in the ultraviolet light region. In addition, the tuning electronic properties of ZrS_2/SnS_2 heterostructure are very interesting, due to the transitions from type-I to type-II band alignment that can occur by applying an external electric field.These results suggest that the atomically thin materials ZrS_2/SnS_2 heterostructure will be utilized for flexible optoelectronic applications.     

Negative Longitudinal Magnetoresistance in the (8-Axis Resistivity of Cd

We report a systematic study on magnetotransport properties of the single crystal of cadmium(Cd). When the applied magnetic field B is perpendicular to the current I, the resistivities for both directions(I ‖ a, I ‖ c) show field induced metal-to-insulator-like transitions. The isothermal magnetoresistance(MR) at low temperatures increases approximately as the square of the magnetic field without any sign of saturation, and reaches up to 1140000% and 58000% at T = 2 K and B = 9 T for I ‖ a and I ‖ c, respectively. As the magnetic field rotates to parallel to the current, no sign of negative MR is observed for I ‖ a, while an obvious negative MR appears up to-70% at 2 K and 9 T for the current flowing along the c-axis, and the negative longitudinal MR shows a strong dependence of the electrode position on the single crystal. These results suggest that the negative longitudinal MR is caused by the dislocations formed in the process of crystal growing along the c-axis. Further studies are needed to clarify this point.     

RbSi_n~q(n=2-12;q=±1)团簇结构、稳定性与电子性质的理论研究

运用密度泛函理论中的杂化密度泛函B3LYP方法,对RbSi_n~q(n=2-12;q=±1)进行了系统的研究。结果发现:大多数RbSi_n~(±1)团簇的基态结构与对应中性Rb Sin团簇的结构不相同,这与电离势及电子亲和能的讨论结果相吻合;得失电子明显提高了体系的稳定性,Rb Si_(2,5)~(+1)与Rb Si_(2,5,10)~(-1)分别是对应团簇中的相对稳定结构;Rb原子总是占有正电荷并且其内部发生了spd杂化。最后讨论了团簇的极化率与最高占据轨道-最低未占据轨道能隙之间的关系。     

浅析美国高功率微波效应研究动态

简要介绍了美国国际高级研究计划局（DARPA）发布的“波形捷变射频定向能（WARDEN）”项目、空军研究实验室公布的《定向能和基地防御》和《定向能未来2060-美国国防部定向能技术未来40年远景》报告,重点分析了“WARDEN”项目、《定向能和基地防御》和《定向能未来2060-美国国防部定向能技术未来40年远景》报告中的高功率微波效应研究动态,分析归纳了当前美国高功率微波效应研究进展和研究重点是“深化无人机和巡航导弹高功率微波后门扰乱效应机理,提升高功率微波武器系统对无人机和巡航导弹的攻击距离”,这些结论可为我国高功率微波效应研究提供重要参考。     

一种改进的MPS粒子作用模型

从分析角度出发,为移动粒子半隐式法(MPS)提供了一组新的粒子作用模型,该模型在粒子局部坐标系下进行泰勒展开,同步获取各算子的粒子近似式,确保了离散精度的一致性.方法对于随机分布的粒子和边界附近的粒子同样适用.文中利用三个算例对该方法进行了检验,计算结果与分析解符合较好.最后,运用该方法成功模拟了自由面流动的二维溃坝问题.