常压化学气相沉积技术生长ZnO:H薄膜的光学性质

采用常压金属有机物化学气相沉积技术(AP-MOCVD),以二乙基锌(DEZn)为Zn源,去离子水(H2O)为氧源,N2作载气,在外延ZnO薄膜的反应气氛中通入少量氢气,在c-Al2O3衬底上生长出了ZnO∶H薄膜。用X射线双晶衍射和光致发光谱对ZnO∶H薄膜的结晶性能和光学性质进行表征。结果表明,ZnO∶H薄膜(002)和(102)面的Ω扫描半峰全宽分别为46.1 mrad和81.4 mrad,表明该薄膜具有良好的结晶性能;室温下,ZnO∶H薄膜具有较强的紫外光发射(380 nm),在低温10 K光致发光谱中观测到位于3.3630 eV处与氢相关的中性施主束缚激子峰(I4)及其位于3.331 eV处的双电子卫星峰(TES)。采用退火的方法,通过观测I4峰的强度变化,研究了氢在ZnO∶H薄膜中的热稳定性。发现随着退火温度的升高,I4峰的强度逐渐减弱,表明在高温下退火,氢会从ZnO薄膜中逸出。     

对薄层柱壳爆炸膨胀断裂过程的研究

 本文提出了一个用于描述动态破坏发展过程的损伤度函数。从这个损伤度函数出发,把材料特征性方程取为强化粘塑性本构方程形式,导出了薄层柱壳爆炸膨胀运动在两种近似下（恒定膨胀速度近似合恒定应变速率近似）断裂判据的解析表达式。结果分析表明,在上述条件下,存在着一个动态断裂“塑性峰”,在这个峰值条件的应变率下,柱壳出现贯穿断裂时刻的应变最大。以软钢为算例,本断裂判据可以比较好地解释Иванов和陈大年等给出的实验结果。这时,动态断裂“塑性峰”对应的应变率为4×10⁴ s^-1,相应的应变约为60%~80%。     

维生素B类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱

维生素Ｂ类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱汪瑗，于秉正张煦（首都师范大学分析测试中心北京１０００３７）（北京大学分析测试中心北京）关键词维生素Ｂ_１，维生素Ｂ_２，薄层色谱，表面增强拉曼散射，近红外付立叶变换拉曼光谱将薄层色谱（ＴＬＣ）...     

红外镜反射光谱的测试与解析

红外镜反射（infrared specular reflection，简称SR）光谱与被测样品和衬底的折射指数、吸收指数以及入射角有密切关系，往往由之产生畸变。要从红外镜反射技术测得的光谱处理得到人们熟悉的吸收光谱，需要经过较复杂的计算机数学处理。本文通过几个比较特殊的镜反射例子，以说明镜反射光谱的测试和解析必须注意多种影响因素。     

溶液酸度和反应温度对CaMoO4薄膜电化学制备的影响

本工作研究了恒电流电化学技术制备CaMoO₄薄膜工艺中，溶液酸度和反应温度对薄膜形成的影响。结果表明，酸度会影响薄膜的生长时间和光致发光特性，在较低酸度沉积薄膜时，容易造成薄膜的团簇生长和不确定相的形成；适当升高反应温度会加快晶粒的生长、提高薄膜的纯度、增加薄膜发射光谱的相对强度。在CaMoO₄薄膜电化学制备工艺中，溶液pH值控制在12.0附近和反应温度控制在60 ℃的左右比较好。     

后处理对TiO_2纳米薄膜的表面结构和光催化活性的影响

半导体TiO2光催化材料对环境中各种污染物的明显去除效果已引起人们的广泛关注犤1～6犦。在普通钠钙玻璃表面涂制高光催化活性的TiO2纳米薄膜,制成环保建筑材料,不仅可以自洁玻璃表面,而且可以用于净化空气、处理废水等。但由于在热处理过程中玻璃基体内的Na+离子扩散到薄膜表面,形成光生电子和空穴的复合中心,使TiO2纳米薄膜的光催化活性大大降低犤7～10犦。为了减少玻璃中Na+离子对TiO2薄膜光催化活性的有害影响,Paz等犤8犦研究了将钠钙玻璃浸入酸溶液中,使玻璃表面的钠离子被酸中的氢离子置换出来;在玻璃表面形成SiO2凝胶层,以便阻…     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Properties and Photoelectrocatalytic Behaviour of Sol-Gel Derived TiO2 Thin Films

Titanium dioxide (TiO₂) thin films have been prepared on indium doped tin oxide (ITO) glass by sol-gel dip-coating method. Properties of the films were determined as a function of heat-treatment by X-ray diffraction, scanning electron microscopy and photoelectrochemical tests. The films heat-treated at higher temperatures show better crystallinity and photoresponse. The microscopic structure on the film after heat-treatment is attributed to the incorporation of organic polymer into the precursor solution. The performance of the electrodes treated at different temperature on photoelectrocatalytic degradation of methyl orange was investigated. The effect of applied potential and the ability of the electrode to be repeatedly used in photoelectrocatalytic degradation were also evaluated.     

Evolution of water vapor from indium-tin-oxide transparent conducting films fabricated by dip coating process

Tin-doped indium oxide In₂O₃ (indium-tin-oxide) transparent conducting films were fabricated on silicon substrates by a dip coating process. The thermal analysis of the ITO films was executed by temperature-programmed desorption (TPD) or thermal desorption spectroscopy (TDS) in high vacuum. Gas evolution from the ITO film mainly consisted of water vapor. The total amount of evolved water vapor increased on increasing the film thickness from approx. 25 to 250 nm and decreased by increasing the preparation temperature from 365 to 600°C and by annealing at the same temperature for extra 10 h. The evolution occurred via two steps; the peak temperatures for 250 nm thick films were approx. 100-120 and 205-215°C. The 25 nm thick films evolved water vapor at much higher temperatures; a shoulder at approx. 150-165°C and a peak at approx. 242°C were observed. The evolution temperatures increased by increasing the preparation and the annealing temperatures except in case of the second peak of the 25 nm thick films. The evolution of water vapor at high temperature was tentatively attributed to thermal decomposition of indium hydroxide, In(OH)₃, formed on the surface of the nm-sized ITO particles. This revised version was published online in August 2006 with corrections to the Cover Date.     

基于磁泳的生物分离分析技术

利用磁场诱导的微粒运动即磁泳对磁响应性粒子进行精细分离,是近年来发展起来的选择性分离细胞和高分子量核酸的有效技术。本文在阐明磁泳分离原理的基础上,介绍了磁泳分离的分流薄层分级技术、四极磁场流动分离技术和微芯片上的自由流磁泳分离技术的装置构造、工作原理及其在生物分离分析中的应用。