退火温度和β-FeSi2薄膜厚度对n-β-FeSi2/p-Si异质结太阳电池的影响

本文采用室温直流磁控溅射Fe-Si组合靶的方法,并通过后续退火温度的优化得到了单一相高质量的β-FeSi2薄膜.结果表明,在本实验条件下得到的未掺杂的β-FeSi2薄膜在室温下是n型导电的,其电学特性存在一个退火温度的最优点:800 ℃.而且在这个最佳温度点上,在Si(111)衬底上外延得到的薄膜载流子迁移率比在Si(100)上高出了一倍多.在上述研究的基础上,采用p-Si(111)单晶片作为外延生长β-FeSi2薄膜的衬底,并通过退火温度和薄膜厚度的优化制备出了国内第一个n-β-FeSi2/p-Si异质结太阳电池,其Jsc=7.90 mA/cm2 ,Voc=0.21 V,FF=0.23,η=0.38;.     

低速p/i界面缓冲层对高速沉积微晶硅太阳电池性能的影响

在采用高压高功率的甚高频等离子体增强化学气相沉积(VHF-PECVD)技术高速沉积微晶硅(μc-Si：H)太阳电池过程中,产生的高能离子对薄膜表面的轰击作用会降低薄膜质量和破坏p型掺杂层(p层)与本征层(i层)之间的界面特性.针对该问题提出在电池中引入低速沉积的p/i界面层的方法,即在p层上先低速沉积一薄层本征μc-Si：H薄膜,然后再高速沉积本征μc-Si：H薄膜.实验结果表明,引入低速方法沉积的界面层有效地提高了p/i界面特性和i层微结构的纵向均匀性,而随界面层厚度的增加,i层中的缺陷态先降低后增加, 关键词： μc-Si：H太阳电池 甚高频等离子体增强化学气相沉积 p/i界面层     

Transfer Ionization of Helium in Collisions with C^q＋ and O^q＋ （q =1 - 3）

Cross-section ratios σTI/σSC of transfer ionization （TI） to single capture （SC） of C^q＋- and O^q＋-He （q = 1 - 3） collisions in the energy range of 15-440 keV/u （0.8-4.2 vBohr） are experimentally determined. It is shown that σTI/σSC strongly depends on the projectile velocity, and there is a maximum for E（keV/u）/q1/2 ≈, 150. Combining the Bohr-Lindhard model and the statistical model, a theoretical estimate is presented, in reasonable agreement with the experimental data when E（keV//u）/q^1/2 〉 35.     

Nonconforming local projection stabilization for generalized Oseen equations

A new method of nonconforming local projection stabilization for the gen- eralized Oseen equations is proposed by a nonconforming inf-sup stable element pair for approximating the velocity and the pressure. The method has several attractive features. It adds a local projection term only on the sub-scale （H ≥ h）. The stabilized term is simple compared with the residual-free bubble element method. The method can handle the influence of strong convection. The numerical results agree with the theoretical expectations very well.     

微静电陀螺仪再平衡回路设计

微静电陀螺仪依靠可控的静电力,将高速旋转的陀螺转子稳定地悬浮在高真空的电极腔中心,是一种能实现两自由度角速率测量的新型微机电陀螺。针对大角度、高角速率的捷联式惯性导航系统应用,对陀螺仪再平衡回路进行了设计。讨论了陀螺仪的动力学特性,给出了补偿负刚度特性的方法,采用双频波特图对系统稳定性进行了分析,给出了再平衡回路的性能仿真结果。仿真与分析表明,陀螺仪允许的最大输入角速度为768(°)/s,标度系数为6.44mV/((°)·s-1)。     

紫外光谱法快速测定生物质提取液中的糠醛和羟甲基糠醛

提出了一种基于紫外光谱快速测定木质生物质预提取液中糠醛(F)和羟甲基糠醛(HMF)的方法。研究中发现,在浓的冰醋酸介质中,276 nm是F和HMF的等吸收点波长;生物质预提取液中的酸溶木素是测定F和HMF光谱的主要干扰。然而,进一步研究发现,酸溶木素在250 nm到500 nm的光谱范围内均有吸收,而F和HMF在325 nm后便没有吸收。因此酸溶木素的影响可以通过其在325 nm的吸光度值乘上一个系数加以矫正。最终,基于等吸收点波长(276 nm)和F的最大吸收波长(272 nm),以及酸溶木素在325 nm(F和HMF均无吸收)处的波长,采用简单的三波长法就可定量检测出生物质提取液中F和HMF的含量。该方法测定前无需加入有毒的酚类物质作为显色剂,且简单、快速,测定F和HMF的相对偏差及回收率分别为3.02%和2.72%,95%～107%和96%～101%,因此很适合用于生物质精炼中木质生物质预提取半纤维素领域的研究。     

Sm3+∶Na5Y(MoO4)4材料的多晶合成与性能表征

本文采用高温固相法合成了Sm3+掺杂的Na5Y( MoO4)4粉末样品.利用X射线衍射仪(XRD)、同步热分析仪(DSC-TG)、荧光光谱仪等分析测试仪器,对多晶材料Sm3+∶Na5 Y0.95( MoO4)4的结构、热学特性与光谱性能进行了研究.研究发现:合成品相属于四方晶系,空间群为I41/a(88),熔点约为704.68℃,最强的两个吸收峰分别在404nm和465 nm处,最强的两个发射峰分别在603 nm和644nm处,是一种很用应用前景的LED用红色荧光材料.     

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi多晶硅 受激准分子激光器结晶 结晶化 界面晶粒生长polycrystalline silicon, excimer laser crystallization,Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growthProject supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).9/7/2005 12:00:00 AM3/6/2006 12:00:00 AMPolycrystalline silicon （poly-Si） thin film has been prepared by means of nickel-disilicide （NiSi2） assisted excimer laser crystallization （ELC）. The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon （a-Si） coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy （SEM）, another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization （Ni-MILC） model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.     

生物质气为燃料的燃料电池理论电动势计算

在以生物质气体为燃料的固体氧化物燃料电池体系中,通过热力学平衡分析编程计算出700-1200 K时气体中各物种例如H2、CO、CO2和CH4的平衡组成,从而得到以氧化钇稳定氧化锆(YSZ)为电解质的电池理论电动势．碳沉积对电动势有显著影响．通过计算可以推测比较适宜的操作温度和增湿条件．还计算了以掺杂氧化铈为电解质的电池电动势,相比氢气为燃料时,使用生物质气体导致的电动势的下降比使用YSZ为电解质的电池要小的多．     

四苯硼酸盐PVC膜铵离子选择电极的研制

以往,常用氨气敏电极测定铵盐,测定时须加入强碱(如氢氧化钠)使 NH_4~+转化为 NH_3。为了直接测定 NH_4~+,同时简化电极,我们研制了四苯硼酸盐 PVC 膜 NH_4~+离子选择电极。