运动平台混响的时空耦合统计模型

混响时空耦合特性是空时处理混响抑制方法中的关键问题之一。传统方法不是建立在统计模型基础上的,对实际海洋混响扩展、海洋混响环境影响及基阵非理想性导致的混响时空耦合分析缺乏有效性。论文在混响概率模型基础上,推导了运动平台的混响时空耦合关系,进一步给出了复杂水声混响环境及具体阵列指向特性下的混响时空耦合规律的统计模型。利用该模型,推导了理想窄波束基阵混响的时空耦合关系。理论解析结果和计算机仿真清晰地展示了理想阵列流形的混响时空分布规律,验证了本文理论推导结果的正确性。最后采用数值计算方法分析非理想基阵的混响空时耦合关系及空时分布规律,结果表明利用本文的混响空时耦合模型,能获得实际基阵的混响空时分布规律,可为空时处理混响抑制算法与系统设计提供一定的理论支撑。      

太赫兹自由电子激光的受激饱和实验

中国工程物理研究院基于半导体光阴极高压直流电子枪和超导直线加速器的高平均功率太赫兹自由电子激光达到了受激饱和,并实现了太赫兹光输出频率可调.在1.99,2.41和2.92 THz三个频率点上进行测试,测得太赫兹宏脉冲内平均功率大于10 W,最高达17.9 W.本文介绍了太赫兹自由电子激光装置的主要组成部分及受激饱和实验的结果.     

基于结团形成模型系统研究Z=82,N=126闭壳附近原子核的α衰变

基于结团形成模型（cluster-formation model,CFM）系统地研究了质子数Z=82,中子数N=126闭壳附近的α衰变母核的α衰变预形成因子P_α。计算结果表明:基于结团形成模型计算得到的P_α线性地依赖于价质子（空穴）N_p和价中子（空穴）N_n的乘积。这与前期工作[SUN X D,et al.Phys Rev C,2016, 94 （2）:024338;DENG J G,et al.Phys Rev C,2017, 96 （2）:024318]得到的结论是一致的,其中,P_α是唯象的且模型依赖的,从α衰变半衰期的理论值和实验值的比值中提取。结合前期工作可以得到这样的结论:对于Z=82,N=126闭壳附近的α衰变母核,其P_α与N_pN_n呈线性关系,且价质子-价中子相互作用在α结团预形成中起了很重要的作用。In the present work, the α decay preformation factors P_α are systematically studied within the cluster-formation model (CFM) for nuclei around Z=82, N=126 closed shells. The calculations show that the P_α calculated by CFM is linearly dependent on the product of valance protons (holes) and valance neutrons (holes) N_p N_n. It is consistent with our previous works[SUN X D, et al. Phys Rev C, 2016, 94 (2):024338; DENG J G, et al. Phys Rev C, 2017, 96 (2):024318], which P_α are model-dependent and extracted from the ratios of calculated α decay half-lives to experimental data. Combining with our previous works, we confirm that the P_α is linearly dependent on the N_pN_n for nuclei around Z=82, N=126 shell closures. In addition, the valance proton-neutron interaction plays a key role in the α preformation.     

Kinetic evolutionary behavior of catalysis-select migration

We propose a catalysis-select migration driven evolution model of two-species(A-and B-species) aggregates,where one unit of species A migrates to species B under the catalysts of species C,while under the catalysts of species D the reaction will become one unit of species B migrating to species A.Meanwhile the catalyst aggregates of species C perform self-coagulation,as do the species D aggregates.We study this catalysis-select migration driven kinetic aggregation phenomena using the generalized Smoluchowski rate equation approach with C species catalysis-select migration rate kernel K(k;i,j) = Kkij and D species catalysis-select migration rate kernel J(k;i,j) = Jkij.The kinetic evolution behaviour is found to be dominated by the competition between the catalysis-select immigration and emigration,in which the competition is between JD0 and KC0(D0 and C0 are the initial numbers of the monomers of species D and C,respectively).When JD0 KC0 > 0,the aggregate size distribution of species A satisfies the conventional scaling form and that of species B satisfies a modified scaling form.And in the case of JD0 KC0 < 0,species A and B exchange their aggregate size distributions as in the above JD0 KC0 > 0 case.     

三维横向流体诱发直管振动的数值模拟

基于有限体积法和有限元法,结合动网格控制技术,建立了横向流体作用下三维弹性直管流致振动计算的数值模型,实现了计算结构动力学与计算流体力学之间的联合仿真．首先,通过对刚性管的静止绕流计算,研究了网格离散方式和不同湍流模型对圆柱类结构静止绕流流场特征的影响和预测能力,得到了适用于双向耦合分析的CFD模型;其次,利用基于双向流固耦合方法的流致振动模型,计算并分析了流体力与结构位移间的相位关系,指出流体力与位移间的相位差是由流体力引起的,同时对双向耦合和单向耦合进行了比较分析;最后通过对直管流致振动的数值计算,联合管表面压力、尾流区时均速度、分离角等时均量,分析了尾流区的流场特征.     

DDQ氧化法合成3-溴-1-（3-氯-2-吡啶基）二1H-吡唑-5-甲酸酯类化合物

以DDQ为氧化剂,对3-溴-1-（3-氯-2-吡啶基）-4,5-二氢-1H-吡唑-5-甲酸酯类化合物进行氧化研究,合成了一系列3-溴-1-（3-氯-2-吡啶基）-1H-吡唑-5-甲酸酯类化合物,其结构经氢谱、碳谱和高分辨质谱分析确证,该方法具有操作简便、产率高、适用范围广等优点．     

含铰接杆系结构几何非线性分析子结构方法

将细长杆系结构按长度方向划分为多个子结构,由于在子结构坐标系下的节点位移均是小位移,可以将子结构内部自由度凝聚到边界. 考虑到子结构端面在变形过程中保持为刚性截面,将端面节点自由度进一步凝聚到端面形心点,这样每一个子结构就减缩成形式上只有两个节点的广义梁单元,大大减缩了自由度. 大位移大转动是细长杆系结构产生几何非线性效应的一个重要原因,基于共旋坐标法,建立了随单元一起运动的随动坐标系,推导了子结构单元的节点力平衡方程及其切线刚度阵. 同时,考虑到工程机械中细长杆系结构含有相互铰接的刚体加强块,给出了非独立自由度节点力转换到独立参数下的广义节点力及其导数. 最后,通过履带式起重机的副臂工况算例,给出了其在不同载荷下的臂架结构位移,验证了方法的正确性.      

The Essence of More Nonlocality with Less Entanglement in Bell Tests

In this paper, we will explore the essence of the phenomenon that state with less entanglement may generate greater Bell violation in the two-qubit Bell tests with CH-type inequalities, i.e., more nonlocality with less entanglement. We will show that this interesting but counterintuitive phenomenon is caused by the rotational asymmetry of the nonmaximally entangled state in the measurement plane. This asymmetry allows the both-side detection probabilities and the one-side detection probabilities obtain their maximal values with nonmaximally entangled state. But the maximal Bell violation may not always happen on nonmaximally entangled state, because these probabilities will compete with each other, and the Bell violation behaves differently for various CH-type inequalities.     

Deterministically distinguishing a remote Bell state

It has been proven that, with a single copy provided, the four Bell states cannot be distinguished by local operations and classical communications (LOCC). Traditionally, a Bell basis projective measurement is needed to distinguish the four Bell states, which is usually carried out with a local interference between two particles. This paper presents an interesting protocol that allows two remote parties to distinguish four Bell states deterministically. We prove that our protocol of distinguishing remote Bell states is beyond LOCC.     

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors (HEMTs) still lack solid reliability. Devices under accelerated DC stress tests (off-state, V_DS =0 state, and on-state step-stress) are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] (Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415). However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.