动态法测量材料的磁电效应

根据动态法测量磁电效应的基本原理,优化设计并建立了磁电效应测量系统,对其中的一些重要参数对磁电效应测量的影响进行了研究.结果表明,综合考虑测量需要,选择适当的测量参数,对于磁电效应的正确测量十分重要.适当增加线圈长度、减小线圈匝数以及减小交变磁场场强,都是提高磁电效应测量精度、减小测量误差的有效途径.     

A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

表面注入P-top区double RESURF功率器件表面电场模型

提出表面注入P-top区double RESURF功率器件表面电场和击穿电压解析模型. 基于分区求解二维Poisson方程, 获得double RESURF表面电场的解析式. 借助此模型, 研究了器件结构参数对表面电场和电势的影响; 计算了漂移区长度和厚度与击穿电压的关系, 给出了获得最大击穿电压和最小导通电阻的途径. 数值结果, 解析结果和试验结果符合较好.     

Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.     

SW-Ⅱ型数显温控XL-Ⅰ箱形高温炉的故障及维修方法

运用电学的基本原理,对数显温控高温炉的故障进行了分析,在实践中总结出各种故障的发生原因、特征现象及解决方法。     

超导单光子探测器件直流特性研究

超导单光子探测技术是基于超薄超导薄膜的非平衡态热电子效应的一种新型的单光子探测方法。超导单光子探测器(SNSPD)的计数率可达到GHz,时间抖动小于100ps,因而在未来量子通信系统中有着广阔的应用前景。介绍了NbN超导单光子探测器件的工作原理和器件超导性能测试系统;测试了超导单光子探测器件的电阻-温度、电流-电压等特性。并对测试结果进行了分析和讨论。     

测三级管特性的改进电路

指出了电子线路基础实施教材中所给出的测三级管特性的电路所存在的问题，提出了合理的.