Periodic patterning of silicon by direct nanosecond laser interference ablation

The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm⁻², 1.3 J cm⁻², 2.0 J cm⁻²) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm⁻², probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate.     

Characterization of ZnO-SnO2 thin film composites prepared by pulsed laser deposition

Thin films of ZnO-SnO₂ composites have been deposited on Si(1 0 0) and glass substrates at 500 °C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50 wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO₂ films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO₂ films can be both crystalline (for ZnO <1 wt%) and amorphous (for ZnO ≥ 10 wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04 nm. The average optical transmittance of the as-deposited films in the visible range (400-800 nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (E_g) seems to depend on the amount of ZnO addition, with the maximum obtained at 1 wt% ZnO. Assuming that the interband electron transition is direct, the optical band gap has been found to be in the range 3.24-3.69 eV for as-deposited composite films. The lowest electrical resistivity of 7.6 × 10⁻³ Ω cm has been achieved with the 25 wt% ZnO composite film deposited at 500 °C. The photoluminescence spectrum of the composite films shows a decrease in PL intensity with increasing ZnO concentration.     

Physical mechanism of silicon ablation with long nanosecond laser pulses at 1064 nm through time-resolved observation

Nanosecond (ns) laser ablation can provide a competitive solution for silicon micromachining in many applications. However, most of the previous studies focus on ns lasers at visible or ultraviolet (UV) wavelengths. The research is very limited for ns lasers at infrared (e.g., 1064 nm) wavelengths (which often have the advantage of much lower cost per unit average output power), and the research is even less if the ns laser also has a long pulse duration on the order of ∼100 ns. In this paper, time-resolved observation using an ICCD (intensified charge-coupled device) camera has been performed to understand the physical mechanism of silicon ablation by 200-ns and 1064-nm laser pulses. This kind of work has been rarely reported in the literature. The research shows that for the studied conditions, material removal in laser silicon ablation is realized through surface vaporization followed by liquid ejection that occurs at a delay time of around 200-300 ns. The propagation speed is on the order of ∼1000 m/s for laser-induced plasma (ionized vapor) front, while it is on the order of ∼100 m/s or smaller for the front of ejected liquid. It has also been found that the liquid ejection is very unlikely due to phase explosion, and its exact underlying physical mechanism requires further investigations.     

激光剥蚀-电感耦合等离子体质谱测定植物样品中的元素

采用193 nm准分子激光剥蚀-电感耦合等离子体质谱(LA-ICP-MS)对标准植物粉末样品(GBW07602-GBW07603灌木枝叶、GBW07604杨树叶、GBW07605茶叶、GBW08514烟草)中13种元素(Li,B,Na,Mg,Al,K,Ca,Cr,Mn,Fe,Ni,Cu,Ba)进行定量测试.向植物粉末样...     

激光剥蚀-电感耦合等离子体质谱:双外标结合基体归一定量校准策略

定量校准策略是激光剥蚀电感耦合等离子体质谱(AICP-MS)分析技术的重要组成部分,直接影响分析数据的质量.本研究评估了现有玻璃标准物质定值不确定度的相对大小,并探究了NIST、MPI-DING和USGS系列玻璃标准物质之间的基体效应.结果表明,NIST610的定值不确定度优于其它玻璃标准物质,在本实验条件下,NIST、MPI-DING和USGS系列玻璃标准物质之间的基体效应可忽略不计.在此基础上提出了双外标结合基体归一定量校准策略,外标分别为NIST610和StHs6/80-G.此策略克服了由于NIST610主量成分与地质样品差别大而造成的主量元素准确度差以及StHs6/80-G中某些微量元素含量低、定值不确定度较大等缺点.对比采用3种定量校准策略(单外标NSIT610基体归一法、单外标StHs6/80G基体归一法和双外标基体归一法)校准的ML3B-G数据可知,双外标基体归一法有效避免了单外标基体归一法的不足,并提高了分析数据的准确度.采用双外标结合基体归一定量校准策略校准了BCR-2G、CGSG-2和KL-2G中的主量元素和微量元素.结果表明,绝大多数分析数据在定值不确定度范围内,验证了此校准策略的实用性.同时,本研究得到的主量微量元素数据进一步补充了BCR-2G、CGSG-2和KL-2G的定值数据库.     

Exploring lead exposure in ancient Chilean mummies using a single strand of hair by laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS)

Lead exposure has received increased attention over the past few decades since it has been shown to have adverse effects on physical and intellectual development in humans. The use of biological tissues such as blood, teeth, hair, and bone for assessment of lead exposure has been previously demonstrated. While analysis of blood for trace metals provides information concerning recent exposure, hair offers insight into a period of several months, and is preferable since it is non-invasively collected and easily stored. The present study analyzed total of 49 ancient hair samples for lead (Pb_H) using LA-ICP-MS. Samples belonged to an ancient fisher hunter–gatherer culture called the “Chinchorro,” and who occupied regions of the Atacama Desert on the northern coast of Chile from approximately 5000–1500 B.C. and practiced the first-known form of artificial mummification. Several samples from a post-Chinchorro agricultural community (n = 12) ca. 1000–1400 A.D. were also analyzed. A suite of hair standards was developed using contemporary hair from the same region and was subsequently used to make linear calibration functions for lead determination in single strands of hair using LA-ICP-MS. Three linear scans ranged from 500 to 1000 μm were performed for each sample and signal intensities were normalized over ¹³C. The distribution of lead in the central medulla in a 100 μm cross-section scan of hair strand demonstrated minimal exogenous contamination. Hair lead (Pb_H) concentrations ranged between 2.2 μg/g and 12.8 μg/g could be accurately quantified with these standards. Twenty one out of 49 samples (43%) showed Pb_H concentrations higher than the average value of 5 μg/g for unexposed individuals (range 1.1–228.0 μg/g). Median hair lead concentrations by burial sites and are shown in order of decreasing concentration: Morro (13.8 μg/g) > Iquique (6.6 μg/g) > Azapa (4.5 μg/g) > Yungay (4.1 μg/g) > Camarones (2.7 μg/g). Most of the burial sites showed Pb_H concentrations greater than the normal value for unexposed individuals and outliers heavily influenced average concentrations. The results suggest that the Chinchorro and later agro-pastoral populations were not widely exposed to naturally elevated lead.     

炭化烧蚀材料热解膨胀和线膨胀对内部温度场影响研究

本文根据炭化烧蚀材料的防热机理,认为防热材料表面化学烧蚀后退、热解膨胀和内部温度升高引起线膨胀是造成防热层厚度变化的因素,国内外学者主要研究了表面化学烧蚀后退对飞行器外形变化和温度场的影响,而对于后两者的具体影响却少有研究。本文数值模拟了高硅氧-酚醛炭化材料的烧蚀热响应过程,分析和解释了计算结果,说明了防热材料的线膨胀和热解膨胀对外形和温度场有较大的影响。     

激光脉冲能量对激光烧蚀保护气体电离的影响

用Ar气作保护气体 ,气压保持在一个标准大气压 ,用Nd :YAG脉冲激光烧蚀Al靶获得等离子体。利用时空分辨技术 ,采集了激光脉冲能量在 5 2 ,92 ,115和 14 5mJ情况下等离子体辐射的时空分辨谱。详细描述了 115mJ时等离子体的辐射特征 ,简要分析了其他脉冲能量下Ar的特征辐射规律。根据这些脉冲能量下Ar 特征谱线的分布规律 ,简要论述了Ar气体电离与激光脉冲能量的关系。讨论了环境气体电离机制 ,并对结果进行了简单解释。结果发现 ,在本实验采用的能量范围内 ,较高的脉冲能量更容易使环境气体电离 ,产生较强的Ar 离子辐射 ,且Ar 辐射持续时间较长。     

Micromachining of a thin film by laser ablation using femtosecond laser with masks

A gold thin film was machined by laser ablation using a femtosecond laser with mask patterns in the shape of lines and numbers. The patterns were successfully transferred with proper focusing and laser fluence. The optimal femtosecond laser fluence to keep the line width was about 5.2 mJ/cm² on the mask, and 99 mJ/cm² on the film. The processing resolution was 13 μm, and the narrowest line width was about 4 μm.