Thermodynamics of porphyrin binding to human serum albumin using affinity capillary electrophoresis

Summary The interaction thermodynamics of heptacarboxylporphyrin (HCP) and protoporhyrin (PP) with human serum albumin (HSA) was studied by affinity capillary electrophoresis (ACE) over the temperature range of 25–50°C, where HCP and PP bound to HSAvia 1:1 molecular association. The binding equilibrium constants (pH 7.4, phosphate buffer) for the binding of HCP with HSA were found to decrease with an increase in temperature, whereas the binding constants of the PP/HSA system appeared to be independent of temperature changes over the range studied. The van’t Hoff relationship (25–50°C) was found to be linear for the interaction of either HCP or PP with HSA. However, the interaction thermodynamics for both of these porphyrins with HSA were found to be quite different. In particular, the interaction of HCP (a hydrophilic porphyrin) with HSA appeared to be based on an enthalpy-driven process, whereas the binding between PP (a hydrophobic porphyrin) and HSA driven by a favorable change in entropy. The ability of using ACE to evaluate the interaction thermodynamics of serum proteins (e.g., HSA) with ligands (e.g., porphyrins and related compounds) should aid in the development of new and more effective photosensitizers in the photodynamic therapy of cancer.     

Discussion of thermodynamic data obtained by adsorption gas chromatography of hydrocarbons on a new graphitized carbon black with a high specific surface area

Summary A new graphitized carbon black (Carbograph 5) with a specific surface area (560 m² g⁻¹) greater than those of commerically available graphitized carbons was studied by gas chromatography to determine the enthalpy, entropy, and free energy of adsorption of a series of alkanes (C₂−C₆). The adsorption properties were also investigated by considering changes in the isosteric heats and entropies of adsorption when a nonpolar stationary phase (squalane) was added to the adsorbent. The data obtained are discussed and compared with literature values for other graphitized carbon blacks.     

金属锡表面吸附氢同位素的量子力学计算

根据原子分子反应静力学与群论,确定了H2、D2和T2的基电子状态为1∑+g(D∞v),SnH、SnD和SnT的基电子状态为2∑+( C∞v).应用基函数SDD**和6-311G**,密度泛函B3P86方法,计算了氢同位素分子及其锡化物的结构、能量E、定容热容Cv和熵S.H2 (D2, T2) ,SnH(D , T)和SnH2(D2, T2)的基电子状态分别为1∑+g(D∞h ),2∑+(C∞v)和3B1(C2v).H2、D2和T2的离解能为4.591 8 eV,SnH(D, T)分子的离解能为2.714 7 eV,SnH2(D2, T2)分子的离解能为4.833 9 eV.用总能量中的电子和振动能量近似代表SnHn、SnDn和SnTn(n=1,2)分子处于固态时的能量,用总熵中的电子和振动熵近似代表SnH、 SnD和SnT分子处于固态时的熵,从而计算了锡与H2、D2和T2反应过程的△Hf°,△Sf°,△Gf°和平衡压力, 并导出他们与温度的函数关系.X     

Structures and stabilities of the donor–acceptor complexes HXPY (X=Al,B; Y=H,F, OH)

The optimized geometries, complexation energies, etc. of HXPY (X?=?Al, B; Y?=?H, F, OH) donor–acceptor complexes have been investigated at the B3LYP/6-311+G(d,p), MP2/6-311+G(d,p) and/or CCSD(T)/6-311+G(d,p) levels. The results show that HBPY (Y?=?H, F, OH) is more stable than the corresponding HAlPY (Y?=?H, F, OH), F (or OH) substitution on phosphorus results in decreasing complex stability, and the stronger the electron-attracting nature of the substitution atom, the more stable the complex. Moreover, the thermodynamic and kinetic properties of the formation reaction of these donor–acceptor complexes were also examined within the temperature range 200–800?K using the general statistical thermodynamics and Eyring transition state theory with Wigner correction. It is concluded that the formation of HBPY is thermodynamically favoured over that of the corresponding HAlPY, especially at low temperature, and is kinetically favoured over that of the relevant HAlPY (Y?=?H, F, OH), especially at high temperature.     

1H NMR Studies of 1-Ethylimidazole Binding to Cytochrome C

Abstract

Kinetic and equilibrium data for 1-EtIm binding to cyt c at temperature range of 303–319K have been determined at pH 7.0 by using ¹HNMR method. Thermodynamic values (ΔH°=39.5 kJ mol^?1, ΔS° = 154 J mol^?1K^?1 and Ea = 142 kJ mol^?1) are obtained from Van't Hoff and Arrhenius's relations. Some hyperfine shifted resonances of l-EtIm cyt c have been assigned for the first time using 1D saturation transfer experiments. The origin of the asymmetric spin density distribution in heme groups of 1-EtIm cyt c and the reason of low affinity of cytochrome c for 1-EtIm are also discussed move toward upfield from original position. However, Te-2, 4 substituents in cyt c are more electron withdrawing than the propionic acid side chains, which lead to the 5-methyl group going toward downfield.     

The thermodynamic functions and the regions of (P,T)-states of dense carbon and boron nitride modifications

Abstract

For the first time the thermodynamic functions for boron nitride and carbon were defined in the temperature range 300 to 4000K by a computational procedure which was impossible in the previous empirical approach. This involved the application of the theoretical functions from Refs. 1, 2, and 3. There the temperature dependence of the heat capacity is characterized by a sum of two Debye functions that reflect the contribution of vibration modes of different characteristic temperature to the heat capacity. The above-mentioned theoretical functions make it possible to calculate the thermodynamic function without allowing for the anharmonic effect in the temperature range rather wider th-an the one wherein the initial experiments were conducted. It is sufficient for their computation to define Debye characteristic temperatures. One of the procedures of their calculation using experimental enthalpy data is described in Ref. 4. Besides, this work contains the majority of known experimental and theoretical data which enable various methods of the thermodynamic function characterizations for carbon and boron nitride to be compared.     

Zr4Al2高压下热动力学性质的第一性原理研究

本文主要通过平面波赝势密度泛函理论的第一性原理计算方法,采用了广义梯度近似（GGA）交换相关函数,研究了六角结构的Zr4Al2的EOS态方程和热动力学性质。通过采用了声子效应的准谐近似德拜模型,我们成功得到了晶胞体积V随温度以及V/V0、德拜温度Θ、热熔CV 随压强P的变化关系。另外,我们还研究了热膨胀系数α及格林参数γ随温度和压强的变化关系,计算结果表明格林参数和热膨胀系数随温度的升高而增加,但是在较高的温度下,热膨胀系数几乎不受温度的影响。     

金红石结构TiO2结构和热力学性质的第一性原理研究

利用基于密度泛函理论的第一性原理计算方法以及准谐德拜模型研究了金红石TiO2的结构和热力学性质。常温常压下所计算的晶格常数、体弹模量及其对压强的一阶导数与实验值和其他理论计算结果相符的较好。另外,我们还计算了体弹模量、热膨胀系数、热容与温度和压强的关系。     

Two universal equations of state for solids satisfying the limiting condition at high pressure

In this paper it is shown that the relationship of bulk modulus with pressure, B=f(P), should be linear both at low and high-pressure limiting conditions. Because most of present equations of state (EOS) for solids cannot satisfy such linear relationship at high pressure, a new function f(P) is proposed to satisfy the linearity. By integrating the bulk modulus, an EOS with three parameters and satisfying the quantum-statistics limitation is derived. It is shown that the EOS can be reduced to two-parameter EOS approximately satisfying the limiting condition. By applying the two EOSs and other three typical EOSs to 50 materials, it is concluded that for materials at low and middle-pressure regimes, the limiting condition does not operate, the Baonza EOS gives the best results, but it cannot provide analytic expression for cohesive energy. The Vinet and our second EOSs are slightly inferior, both EOSs can provide analytic expression for cohesive energy, and for materials at high-pressure regimes our second EOS gives the best results. The Holzapfel and our first EOSs give the worst results, although they strictly satisfy the limiting condition. For practical applications, the limiting condition is not important because it only operates as V→0.     

Thermodynamic analysis of Si doping in GaN

Equilibrium calculations of Si-doping in GaN are investigated using the Gemini code. The method of the calculation is based on the minimisation of the Gibbs free energy. Experimental growth conditions are used for the calculation. The variables are the amount of the dopant and the temperature. The results show the formation of a solid Si₃N₄ compound with a certain quantity of the input SiH₄, that is the silicon precursor in our MOVPE system. Si₃N₄ formation can explain the limitation of Si incorporation and the surface roughening as revealed by MOVPE Si doped layers.