铟(Ⅲ)与桑色素共存时电化学行为的研究和分析应用 Ⅱ.桑色素及其与铟(Ⅲ)共存时电极反应过程

桑色素(H_5L),铟(Ⅲ)在盐酸-氯化钾(pH2.2～2.6)溶液中,分别以 H_4L~-及In(H_2O)_4Cl(_2~+)形态存在,但未形成缔合物,在电极表面,H_4L~-吸附诱导 In(H_2O)_4Cl(_2~+)与之形成缔合物,使 In(Ⅲ)还原电流增敏,文中提出了桑色素及其与铟(Ⅲ)共存时(pH2.4)各自的电极反应机理,对阴离子表面活性剂的增敏作用也进行了探讨。     

火焰原子吸收光谱法对伸筋草中金属元素含量的测定分析

采用火焰原子吸收光谱法对伸筋草中的六种金属元素Fe、Cu、Zn、Mn、Ca、Mg的含量进行了测定。方法简单,精密度和灵敏度高,回收率为95.8%~106.1%,相对标准偏差(RSD)小于1.7%,测定结果为研究伸筋草的药理、药效提供了有用的数据。     

色谱－质谱联用法测定荧光灯中气体杂质及充气压强

］实验出一种色质联用法测定荧光灯中气体杂质及充气压强的新方法。使用两根并联色谱柱（柱1：Φ3mmi.d.×0.6m13XM.S.（分子筛60-80目；柱23mmi.d.×1.5mPorapakQ（80-100目），室温下可同时测定灯中H2，O2，N2，CH4，CO，CO2等多种气体杂质分压强。其测定下限分别为4×10-3，3×10-3，6×10-3，6×10-4，10-24×10-3Pa。并研究出了一种简易快速的破灯装置及标准气配制装置。导出了计算灯中各气体压强及杂质气浓度公式。     

Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.     

Influence of substrate bias voltage on the microstructure of nc-SiOx:H film

Amorphous silicon oxide containing nanocrystalline silicon grain(nc-SiO_x:H) films are prepared by a plasmaenhanced chemical vapor deposition technique at different negative substrate bias voltages.The influence of the bias voltage applied to the substrate on the microstructure is investigated.The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si.The grain size can be well controlled by varying the substrate bias voltage,and the largest size is obtained at 60 V.Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiO_x:H films suggest that the absorption peak intensities,which are related to the defect densities,can be well controlled.It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process,which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds.Also the larger grain size and lower band gap,which will result in better photosensitivity,can also be obtained with a moderate substrate bias voltage of 60 V.     

线性回归模型中变量选择方法综述

变量选择是统计分析与推断中的重要内容,也是当今研究的热点课题。本文系统介绍了线性回归模型中变量选择的研究概况和最新进展,并指出了有待进一步研究的问题。     

函数型Probit模型的sieve极大似然估计

研究函数型Probit模型的sieve极大似然估计的渐近性质.在一定的条件下,证明了估计的强相合性和渐近正态性以及该估计的非参数部分达到最优收敛速度.最后给出了一个模拟研究,表明sieve极大似然估计有较好的有限样本性质.     

一类三阶方程奇摄动边值问题“啪”解的渐近分析

研究了一类出现所谓“啪”解(对照空间结构)的三阶奇摄动边值问题,给出了上述问题在出现一个“啪”解时的渐近解的构造算法及其条件;采用逐步推算法,利用解在“啪”点的连续性条件,具体地找出了“啪’点,且得到了边界层函数的指数式衰减估计;最后,对在描述“啪”点主项t_0处间断的渐近解进行了修正,使其在讨论区间上二次连续可微,得到了误差估计定理。     

含氟聚合物表面能的测算

通过测定参照液体在聚合物表面的接触角,应用Zisman,Fowkes和筏·義人提出的三种方法,测算了数种国产含氟聚合物的表面能。     

谈土木建筑中的热力学

本文从土木建筑的结构、构造、性能、朝向等方面进行研究分析，总结了热力学在土木建筑中的应用，说明了热力学与土木建筑密切相关．