水质中10种微量元素混合标准样品的研制

水中微量元素及重金属检测是日常环境监测的主要项目[1-2]。近年来,各类适合多元素同时测定的大型分析仪器在分析检测领域的实验室中得到了普及,使得这些实验室对多元素混合标准样品的需求日益强劲。为了更好地配合国家标准方法GB 3838-2002《地表水环境质量标准》、GB 5749-2006《生活饮用水卫生标准》和《重金属污染综合防治"十二五"规划》等有关国家标准和规划的实施,并为我国无机污     

含联苯三羧酸及二咪唑基吡啶配体的两个锌配位聚合物的合成、结构及荧光性质

以3,3′,5-联苯三羧酸(biphenyl-3,3′,5-tricarboxylic acid,H3bpta)、2,6-二(1-咪唑基)吡啶(2,6-bis(imidazole-1-yl)pyridine,bip)、Zn(NO3)2·6H2O和ZnCl2为原料,在水热条件下合成了配位聚合物{[Zn3(H2O)7(bpta)2]·5H2O}n(1)和{[Zn2Cl(bpta)(bip)2]·2H2O}n(2)。并利用红外、元素分析和X-射线单晶衍射等对其结构进行表征。X-射线单晶衍射分析表明:化合物1属于单斜晶系,C2/c空间群,a=3.317 1(11)nm,b=1.495 7(5)nm,c=0.695 1(2)nm,β=91.50°,Z=4;化合物2属于单斜晶系,P2/c空间群,a=1.960 4(4)nm,b=1.035 7(2)nm,c=1.998 7(4)nm,β=101.97(3)°,Z=4。化合物1通过bpta桥联Zn髤形成1D链,通过配位水与羧基氧之间的氢键作用构筑成3D结构。化合物2中bip桥联Zn髤构成1D螺旋链状结构,进一步通过bpta桥连形成2D网状结构。此外,对化合物1和2进行了热稳定性分析和荧光性质研究。     

Hash function based on the generalized Henon map

A new Hash function based on the generalized Henon map is proposed. We have obtained a binary sequence with excellent pseudo-random characteristics through improving the sequence generated by the generalized Henon map, and use it to construct Hash function. First we divide the message into groups, and then carry out the Xor operation between the ASCII value of each group and the binary sequence, the result can be used as the initial values of the next loop. Repeat the procedure until all the groups have been processed, and the final binary sequence is the Hash value. In the scheme, the initial values of the generalized Henon map are used as the secret key and the messages are mapped to Hash values with a designated length. Simulation results show that the proposed scheme has strong diffusion and confusion capability, good collision resistance, large key space, extreme sensitivity to message and secret key, and it is easy to be realized and extended.     

Quantum state sharing of an arbitrary qudit state by using nonmaximally generalized GHZ state

We present a scheme for quantum state sharing of an arbitrary qudit state by using nonmaximally entangled generalized Greenberger-Horne-Zeilinger （GHZ） states as the quantum channel and generalized Bell-basis states as the joint measurement basis. We show that the probability of successful sharing an unknown qudit state depends on the joint measurements chosen by Alice. We also give an expression for the maximally probability of this scheme.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

高功率速调管聚焦磁场设计研究

 国产45 MW速调管是在原国产30 MW HK-1型速调管的基础上改进和发展起来的，其聚焦磁场设计也是参照30 MW速调管聚焦磁场设计并在其基础上加工改造完成。为此必须对旧聚焦系统进行改造，设计出符合需要的磁场分布，以满足45 MW速调管工作的需要。首先从理论上找出速调管工作时的理想磁场值，根据该磁场分布设计出相应的线圈结构；其次根据45 MW速调管的结构尺寸，对30 MW速调管的线圈支架进行改造，利用旧线圈和新支架组成新的聚焦系统；最后，根据理论模拟和测试结果，调整和优化各组线圈的电流值，给出速调管工作时的各组聚焦电源运行参考值。叙述了新聚焦线圈的理论设计和测试分析，包括新线圈支架的设计、水冷系统与线圈的结构安排和整体的测试结果，最后根据速调管高功率测试运行状态给出速调管工作时的聚焦线圈电流的参考值。     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

硼玻璃中Sm3+离子的衰减及交叉弛豫

本文从Sm3+的衰减特性及能级跃迁性质两个方面研究Sm3+离子间的相互作用.一方面研究不同浓度Sm3+的衰减性质,利用Hirayama的理论确立相互作用的性质,另一方面研究相关能级的跃迁性质,从而证实由衰减所得结论的合理性.     

弹塑性结构在外载和温度作用下的安定分析

本文在考虑外载和温度的缓慢变化下，提出了一个新的运动安定定理。同时，在此基础上，又导出了既简单又适用的增量破坏准则．文末也以实例说明了它的应用。     

二苯醚系高分子单体的新合成路线

二苯醚系高分子单体的新合成路线张志强，田正华（鞍山钢铁学院化工系，ｌｌ４００２）４，４’─二苯醚二甲酸，４，４’─二氨基二苯醚，３，３＇４，４’─二苯醚四甲酸二酐等取代二苯醚是一类重要的高分子单体，用于制备聚酰胺、聚酰亚胺和聚芳酯，在耐高温塑料、液晶...