ICF中子发射时间诊断

 对ICF中子发射时间的诊断技术进行了研究,研制了基于快闪烁体和微通道板式光电倍增管的中子发射时间探测器。在某大型激光原型装置上进行了中子发射时间的实验测量,成功获得多发实验的中子发射时间与打靶激光脉冲的时间及中子发射时间之间的关系。实验结果表明：中子发射时间探测器对DT中子和DD中子都能够响应,中子产额测量下限达到10⁷,时间测量不确定度小于20 ps;CH烧蚀层越厚,中子发射时间越长。     

高压直流连续波光阴极注入器中发射度补偿

空间电荷效应是引起发射度增长的主要因素,特别是在高压直流连续波光阴极注入器中。分析了高压直流连续波光阴极注入器中线性空间电荷力的特点及其对电子束横向发射度的影响,并从理论上解析地研究了螺线管发射度补偿的原理及特点。最后利用Parmela程序对中国工程物理研究院高压直流连续波光阴极注入器的发射度补偿作了模拟计算。结果表明,束团电荷量为80 pC的电子束在350 keV高压直流电子枪出口处的横向归一化发射度为5.14 mmmrad,经过螺线管补偿后,其最小横向发射度变为1.27 mmmrad。电子束的发射度得到了很好的补偿。     

Influencing factors of microscanning performance based on flat optical component

To decrease the performance difference between the actual microscanning thermal imager and the theoretical value, a germanium lens (placed at a certain angle between the infrared focal plane array and infrared lens) dip angle model of flat optical component microscanning is introduced in this letter. The model is the basis for choosing the dip angle of the germanium lens, which is used in the microscanning thermal imager. In addition, the actual dip angle of the germanium lens is chosen according to the model, the infrared lens parameters of the thermal imager, and the germanium lens parameters of manufacture and installation. Only in this manner can the optimal performance of the microscanning thermal imager based on the flat optical component be obtained. Results of the experiments confirm the accuracy of the conclusions above.     

Above-threshold detachment of negative ions by circularly polarized few-cycle laser fields

In accordance with nonperturbative quantum scattering theory,we investigate photoelectron angular distributions(PADs) from above-threshold detachment(ATD) of negative ions irradiated by circularly polarized few-cycle laser fields.Electrons ejected on the polarization plane demonstrate distinct anisotropies in angular distributions which distinctly vary with the carrier-envelope(CE) phase.The anisotropy is caused by interference between transition channels;it also depends strongly on laser frequency,pulse duration,and kinetic energy of photoelectrons.Optimal emission of photoelectrons,which varies with CE phase,makes it possible to control photoelectron motion.     

Transmission-mode GaN photocathode based on graded Al_xGa_(1-x)N buffer layer

We create a GaN photocathode based on graded Alx Ga1-x N buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes.A gateshaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained.Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones.The fitted interface recombination velocity is 5×104 cm/s,with negligible magnitude,proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

Theoretical study of photon emission from single quantum dot emitter coupled to surface plasmons

Motivated by the recent pioneering advances on nanoscale plasmonics and also nanophotonics technology based on the surface plasmons (SPs), in this work, we give a master equation model in the Lindblad form and investigate the quantum optical properties of single quantum dot (QD) emitter coupled to the SPs of a metallic nanowire. Our main results demonstrate the QD luminescence results of photon emission show three distinctive regimes depending on the distance between QD and metallic nanowire, which elucidates a crossover passing from being metallic dissipative for much smaller emitter-nanowire distances to surface plasmon (SP) emission for larger separations at the vicinity of plasmonic metallic nanowire. Besides, our results also indicate that, for both the resonant case and the detuning case, through measuring QD emitter luminescence spectra and second-order correlation functions, the information about the QD emitter coupling to the SPs of the dissipative metallic nanowire can be extracted. This theoretical study will serve as an introduction to understanding the nanoplasmonic imaging spectroscopy and pave a new way to realize the quantum information devices.     

应用声发射技术的钢筋与混凝土粘结滑移特性研究

为研究钢筋与混凝土间的粘结滑移特性,分别对不同粘结长度的钢筋混凝土试件进行了拉拔试验,同时对粘结长度相同而钢筋外形不同的试件进行了比较试验.利用声发射技术采集相应波形信号,并对采集信号进行了小波去噪和Gabor小波时频分析.结果显示,各试件受力全过程均可分为完全粘结、局部脱粘、非线性滑移及残余粘结四个阶段;不同粘结长度...     

等离子喷涂铁基涂层的疲劳磨损裂纹行为

采用等离子喷涂制备了铁基涂层,使用球盘式疲劳磨损试验机进行涂层的疲劳磨损试验,利用声发射技术在线判断涂层开裂,并通用透射电子显微镜（TEM）分析了试验前后涂层内部微观结构,研究了喷涂层疲劳磨损裂纹的扩展行为。结果表明：制备的涂层致密,结合状态良好,主要相为铁素体,同时存在大量的非晶-纳米晶相,利用声发射技术能够表征涂层的临界失效状态,其内部疲劳磨损裂纹主要以韧性穿晶断裂的形式扩展。