Synthesis of grafted poly(p‐phenyleneethynylene) with energy donor–acceptor architecture via atom transfer radical polymerization: Towards nonaggregating and hole‐facilitating light‐emitting material

In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007     

The variational Lyapunov function and strict stability theory for differential systems

In this paper, we investigate strict stability of differential systems by variational Lyapunov function. We obtain some sufficient conditions and comparison theorems.     

关于Lipschitz域上反射Brown运动的游程

本文具体刻画有界 Lipschitz 域上的反射 Brown 运动跨过某给定时刻 t 的离开 Martin 边界的游程．在此基础上,给出 Lipschitz 域上的反射 Brown 运动的边界过程的 L(?)vy 系统．     

Improved coating method for uniform polymer layer in infrared hollow fiber

An improved coating method was proposed in order to form a uniform polymer layer in the fabrication of cyclic olefin polymer-coated silver (COP/Ag) hollow fiber. A COP solution was flowed in a closed loop, in which the silver-coated tube was used as a part of the loop. Owing to the constant flowing speed of the COP solution and the airtight flowing environment, a COP layer was uniformly formed. The hollow fibers attain high performance and deliver multi-wavelength laser light from the infrared to the visible simultaneously. The method was successfully applied to the fabrication of practical hollow fibers with 2 m length for the near and mid-infrared lasers.     

Stability of transonic shocks in supersonic flow past a wedge

In this paper we study the stability of transonic shocks in steady supersonic flow past a wedge. We take the potential flow equation as the mathematical model to describe the compressible flow. It is known that in generic case such a problem admits two possible location of shock, connecting the flow ahead it and behind it. They can be distinguished as supersonic-supersonic shock and supersonic-subsonic shock (or transonic shock). Both these possible shocks satisfy the Rankine-Hugoniot conditions and entropy condition. In this paper we prove that the transonic shock is also stable under perturbation of the coming flow provided the pressure at infinity is well controlled.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

双缺陷模一维光子晶体的双光子吸收增强研究

采用真空镀膜工艺制备了具有762 nm和800 nm双缺陷模的含两个CdS缺陷层的TiO2/SiO2一维光子晶体,运用抽运探测技术测量了其双光子吸收。对于两个缺陷模,双光子吸收均得到很大的增强,其中缺陷模为800nm时的双光子吸收系数307 cm/GW要大于缺陷模为762 nm时的116 cm/GW,分别为单层CdS薄膜的48倍和18倍。这种双光子吸收的增强是由于光局域化导致一维光子晶体缺陷层内的电场强度增大而形成的。通过传输矩阵法计算了一维光子晶体的内部场强,发现800 nm波长光入射时缺陷层内的电场强度要大于762 nm波长光入射时的电场强度值。     

Ultrafast non-linear optical properties of Ge20As25Se55 chalcogenide films

The non-resonant third-order non-linear optical properties of amorphous Ge₂₀As₂₅Se₅₅ films were studied experimentally by the method of the femtosecond optical heterodyne detection of optical Kerr effect. The real and imaginary parts of complex third-order optical non-linearity could be effectively separated and their values and signs could be also determined, which were 6.6 × 10⁻¹² and −2.4 × 10⁻¹² esu, respectively. Amorphous Ge₂₀As₂₅Se₅₅ films showed a very fast response in the range of 200 fs under ultrafast excitation. The ultrafast response and large third-order non-linearity are attributed to the ultrafast distortion of the electron orbitals surrounding the average positions of the nucleus of Ge, As and Se atoms. The high third-order susceptibility and a fast response time of amorphous Ge₂₀As₂₅Se₅₅ films makes it a promising material for application in advanced techniques especially in optical switching.     

符号几何规划的一种分解方法

针对符号几何规划提出了一种直接的分解方法,将难于求解的符号几何规划问题等价地转化为一个非线性程度很低的可分离规划,为寻求困难度高且规模较大的符号几何规划问题的求解提供了一种方法,特别是经此方法分解后的每个子问题均易于求解,最后给出了数值实例,验证了此方法的有效性．     

Investigation on the barrier height and inhomogeneity of nickel silicide Schottky

The apparent Schottky barrier height (SBH) of the nickel silicide Schottky contacts annealed at different temperatures was investigated based on temperature dependence of I-V characteristic. Thermionic emission-diffusion (TED) theory, single Gaussian and double Gaussian models were employed to fit I-V experimental data. It is found the single Gaussian and double Gaussian SB distribution model can give a very good fit to the I-V characteristic of apparent SBH for different annealing temperatures. Also, the apparent SBH and the leakage current increase with annealing temperatures under reverse voltage. In addition, the homogeneity of interfaces for the samples annealed at temperatures of 500 and 600 °C is much better than that of the samples annealed at temperatures of 400, 700, and 800 °C. This may result from the phase transformation of nickel silicide due to the different annealing temperatures and from the low Schottky barrier (SB) patches.