Indacenodithienothiophene based chromophore with cyclopentadienylidenehydrazine acceptor moieties

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3,6‐Dialkylthieno[3,2‐b]thiophene moiety as a soluble and electron donating unit preserving the coplanarity of photovoltaic low band gap copolymers

It has been shown recently, that the presence of alkyl side chains at the 3‐positions on the thiophene rings placed next to 2,1,3‐benzothiadiazole core in the backbone of several conjugated polymers results in severe steric hindrance and prevents efficient planarity of the thiophene‐2,1,3‐benzothiadiazole‐thiophene (TBzT) segment. Both properties have a strong influence on the optoelectronic properties of the polymer and need to be considered when the polymer is to be used for organic electronics applications. In this work, we modified a previously synthesized oligothiophene copolymer, consisting of two 3,4′‐dialkyl‐2,2′‐bithiophene units attached to a 2,1,3‐benzothiadiazole unit (TBzT segment) and a thieno[3,2‐b]thiophene unit, by optimizing the lateral alkyl side chains following a density functional theory investigation. It is demonstrated that eliminating the alkyl side chains from the 3‐positions of the TBzT segment and anchoring them onto the thieno[3,2‐b]thiophene, using an efficient synthesis of the 3,6‐dihexylthieno[3,2‐b]thiophene unit, allows us to reduce the energy band gap. In addition, the chemical modification leads to a better charge transport and to an enhanced photovoltaic efficiency of polymer/fullerene blends. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

GeS/MoS2异质结电子结构及光学性能的第一性原理研究

以MoS₂、GeS为代表的二维层状材料在光学、电学等方面表现出优异的物理性能。如何将两者的优良性能结合,同时获得具有新的协同功能的复合材料对电子器件的发展和应用具有重要意义。本文采用密度泛函理论的第一性原理计算方法,对GeS/MoS₂异质结的电子结构及光学性质进行了系统研究,并探索了界面间距、应变和电场对异质结电子结构和光学性能的影响。研究结果表明,GeS/MoS₂异质结是Ⅱ型能带排列,该能带排列有利于光生电子-空穴对的分离。进一步研究发现,通过应变和电场等手段可以实现对GeS/MoS₂异质结能带排列及光吸收系数的有效调控。该研究结果表明GeS/MoS₂异质结在光催化、光电器件等领域具有潜在的应用,为设计与制备GeS/MoS₂相关的光电器件提供了理论指导。     

Porphyrin–diindenothieno[2,3‐b]thiophene alternating copolymer—a blue‐light harvester in ternary‐blend polymer solar cells

Porphyrin, despite chosen by Nature as light harvesting units, hasn't revealed its full potentials as a structural unit in porphyrin‐incorporated polymers (PPors). A novel PPor was synthesized to investigate the origins of the low performances of PPor‐based polymer solar cells (PSCs). The polymer features broad absorption in the blue‐light region, because the diindenothieno[2,3‐b]thiophene (DITT) unit extended the conjugation in the polymer backbone. PPor‐DITT/PC₇₁BM based PSCs have a high V_oc (0.79 V). Their low J_sc and fill factor (FF) were attributed to the un‐optimized morphology, as indicated by the photoluminescence quenching and atomic force microscopy (AFM) experiments. Using PPor‐DITT as a blue‐light harvesting dopant in an amorphous host leverage the strong 400–550 nm absorption of PPor‐DITT and circumvent the difficulties in reaching optimized morphology in the PPor/PCBM thin films. An addition of 2 wt % of PPor‐DITT in ternary‐blend PSCs resulted in a 10 % increase of external quantum efficiency (EQE) in the blue‐light region. However, in a crystalline host, the dopant decreased the crystallinity of the host and led to large drops in FF and power conversion efficiencies (PCEs). The study provides an alternative route and expands the application of PPors in PSCs as a blue‐light harvester in ternary‐blend PSCs using amorphous polymers as host. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.     

Ti4+掺杂制备花状SnO2/Sn3O4异质结微米球及其光催化性能

通过水热法制备了由层状纳米片堆叠而成的花球状Sn_3O_4及x%Ti-Sn O_2/Sn_3O_4(x%为Ti与Sn的物质的量之比)。采用X射线粉末衍射、扫描电子显微镜、透射电子显微镜、X射线光电子能谱、紫外-可见漫反射光谱、红外光谱和光电流响应等物理化学方法对合成的样品进行表征分析。结果表明,由于Ti~(4+)电负性及离子半径与Sn~(4+)相似,可以很好地进入Sn_3O_4晶格中替代Sn~(4+)形成替代掺杂,但不引起大的晶格畸变。同时,掺入Ti~(4+)后使得一部分Sn~(4+)直接与O结合生成纳米球状Sn O_2颗粒分散覆盖在Sn_3O_4表面,形成Sn O_2/Sn_3O_4异质结。光催化活性表明,x%Ti-Sn O_2/Sn_3O_4不仅具有较强的还原Cr~(6+)能力,而且拥有氧化降解有机污染物甲基橙和酸性橙Ⅱ的能力。催化活性的增强归因于x%Ti-Sn O_2/Sn_3O_4具有比较大的比表面积和更强的光吸收,同时Sn O_2/Sn_3O_4异质结的生成有效地提升了光生电子与空穴的分离效率。     

Ag_2CO_3/BiVO_4复合微米片光催化剂的制备、表征及光催化机理

采用水热法制备粒径为1~2μm的BiVO_4微米片,然后在微米片表面沉积不同含量的Ag_2CO_3颗粒,制备Ag_2CO_3/BiVO_4复合微米片光催化剂。利用X射线粉末衍射(XRD)、扫描电镜(SEM)、红外光谱(FTIR)、紫外-可见漫反射光谱(UV-Vis DRS)、光致发光(PL)光谱、瞬态光电流-时间响应对催化剂进行表征。以可见光为光源,罗丹明B为降解对象进行光催化活性测试。结果表明,复合适量Ag_2CO_3有利于提高光催化剂的比表面积,改善催化剂的表面性能。活性测试结果表明,当复合10%(w/w)Ag_2CO_3时,Ag_2CO_3/BiVO_4光催化活性最佳,比纯BiVO_4提高4.4倍。光致发光(PL)光谱、瞬态光电流-时间响应测试结果表明,复合Ag_2CO_3能有效抑制光生电子与空穴的复合。自由基捕获实验结果表明,该体系的活性氧物质为空穴和羟基自由基。Ag_2CO_3/BiVO_4复合光催化剂活性提高的原因,是较宽带隙的Ag_2CO_3与较窄带隙的BiVO_4形成的异质结有效抑制了光生电子与空穴的复合,同时两者适宜的能带结构保证产生更多的空穴,从而具有更强的氧化能力。     

退火温度对TiO_2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备(001)高活性晶面主导的TiO_2纳米片薄膜,利用循环伏安法在TiO_2纳米片薄膜上沉积CdSe颗粒,制备了TiO_2/CdSe纳米片异质结薄膜。分别在150、250、350、450℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪(XRD)、场发射扫描电镜(FESEM)、X射线光电子能谱分析仪(XPS)、紫外-可见(UV-Vis)分光光度计以及电化学工作站对不同温度退火后的TiO_2/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明:六方相CdSe纳米颗粒均匀包覆在TiO_2纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO_2纳米片表面的Se元素与Cd元素发生氧化;TiO_2/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO_2/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO_2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO_2/CdSe纳米片异质结薄膜的最佳退火温度为150℃,填充因子为0.77,光电转换效率达到3.12%。     

Synthesis and Characterization of a Soluble A–D–A Molecule Containing a 2D Conjugated Selenophene‐Based Side Group for Organic Solar Cells

A new acceptor–donor–acceptor (A–D–A) small molecule based on benzodithiophene (BDT) and diketopyrrolopyrrole (DPP) is synthesized via a Stille cross‐coupling reaction. A highly conjugated selenophene‐based side group is incorporated into each BDT unit to generate a 2D soluble small molecule (SeBDT‐DPP). SeBDT‐DPP thin films produce two distinct absorption peaks. The shorter wavelength absorption (400 nm) is attributed to the BDT units containing conjugated selenophene‐based side groups, and the longer wavelength band is due to the intramolecular charge transfer between the BDT donor and the DPP acceptor. SeBDT‐DPP thin films can harvest a broad solar spectrum covering the range 350–750 nm and have a low bandgap energy of 1.63 eV. Solution‐processed field‐effect transistors fabricated with this small molecule exhibit p‐type organic thin film transistor characteristics, and the field‐effect mobility of a SeBDT‐DPP device is measured to be 2.3 × 10⁻³ cm² V⁻¹ s⁻¹. A small molecule solar cell device is prepared by using SeBDT‐DPP as the active layer is found to exhibit a power conversion efficiency of 5.04% under AM 1.5 G (100 mW cm⁻²) conditions.