关于Ⅰ期临床试验的研究综述

本文综述关于I期临床试验的研究.主要介绍确定最大耐受剂量(MTD)的不同方法,以及提出可以进一步进行研究的问题.     

关于拟合优度检验的EDF统计量的若干评注(英语)

拟合优度检验是建立统计模型的一个重要手段,很多检验统计量用一个理想样本能达到它们自己的极值,但EDF统计量做不到,这无疑会影响检验的势。在本文中,我们将提出某些调整型EDF统计量,它们具有这些性质,并改进了EDF检验,蒙得卡罗模拟表明,调整型EDF统计量在很多场合要必EDF具有更高的势,特别对重尾的备选分布更是这样,我们还考察了检验的形态与它们的极值点之间的关系。     

对《自然坐标系中的符号规则》一文的异议──自然坐标系中的正向选法

本文分析了《自然坐标系中的符号规则》一文的不妥之处，提出了“自然坐标系中的正向选法”，讨论了用“正向选法”所获得的改进情况．最后举例说明用自然坐标系解题时，如果采用上述“正向选法”，一般可使列方程和解算均较简便。     

三(邻甲苯基)氢化锡与1-乙炔基环戊醇和1-乙炔基环己醇的加成物的合成及晶体结构

通过三(邻甲苯基)氢化锡与1-乙炔基环己醇和1-乙炔基环戊醇发生加成反应,得到两个加成物:(Z)-1-[2-(三-邻甲苯基锡基)乙烯基]环戊醇(1)和(Z)-1-[2-(三-邻甲苯基锡基)乙烯基]环己醇(2).通过元素分析、红外光谱和核磁共振氢谱等手段对其结构进行了表征.用X射线单晶衍射测定了加成物1和2的晶体结构.二者均为具有分子内O→Sn弱配位的扭曲四面体结构.1属于单斜晶系,P21/n空间群,晶胞参数:a=1.0496(2)nm,b=1.7658(4)nm,c=1.3193(3)nm,β=90.60(3)°,V=2.4451(8)nm3,Z=4,R=0.0317,wR=0.0820.2属于三斜晶系,空间群P1,晶胞参数:a=O.85592(17)nm,b=0.93016(19)nm,c=1.6368(3)nm;α=83.76(3)°,β=82.69(3)°,γ=78.05(3)°;V=12600(4)nm3,Z=2,R=0.0377,wR=O.1030.     

铟(Ⅲ)与桑色素共存时电化学行为的研究和分析应用 Ⅱ.桑色素及其与铟(Ⅲ)共存时电极反应过程

桑色素(H_5L),铟(Ⅲ)在盐酸-氯化钾(pH2.2～2.6)溶液中,分别以 H_4L~-及In(H_2O)_4Cl(_2~+)形态存在,但未形成缔合物,在电极表面,H_4L~-吸附诱导 In(H_2O)_4Cl(_2~+)与之形成缔合物,使 In(Ⅲ)还原电流增敏,文中提出了桑色素及其与铟(Ⅲ)共存时(pH2.4)各自的电极反应机理,对阴离子表面活性剂的增敏作用也进行了探讨。     

火焰原子吸收光谱法对伸筋草中金属元素含量的测定分析

采用火焰原子吸收光谱法对伸筋草中的六种金属元素Fe、Cu、Zn、Mn、Ca、Mg的含量进行了测定。方法简单,精密度和灵敏度高,回收率为95.8%~106.1%,相对标准偏差(RSD)小于1.7%,测定结果为研究伸筋草的药理、药效提供了有用的数据。     

色谱－质谱联用法测定荧光灯中气体杂质及充气压强

］实验出一种色质联用法测定荧光灯中气体杂质及充气压强的新方法。使用两根并联色谱柱（柱1：Φ3mmi.d.×0.6m13XM.S.（分子筛60-80目；柱23mmi.d.×1.5mPorapakQ（80-100目），室温下可同时测定灯中H2，O2，N2，CH4，CO，CO2等多种气体杂质分压强。其测定下限分别为4×10-3，3×10-3，6×10-3，6×10-4，10-24×10-3Pa。并研究出了一种简易快速的破灯装置及标准气配制装置。导出了计算灯中各气体压强及杂质气浓度公式。     

Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.     

Influence of substrate bias voltage on the microstructure of nc-SiOx:H film

Amorphous silicon oxide containing nanocrystalline silicon grain(nc-SiO_x:H) films are prepared by a plasmaenhanced chemical vapor deposition technique at different negative substrate bias voltages.The influence of the bias voltage applied to the substrate on the microstructure is investigated.The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si.The grain size can be well controlled by varying the substrate bias voltage,and the largest size is obtained at 60 V.Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiO_x:H films suggest that the absorption peak intensities,which are related to the defect densities,can be well controlled.It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process,which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds.Also the larger grain size and lower band gap,which will result in better photosensitivity,can also be obtained with a moderate substrate bias voltage of 60 V.     

线性回归模型中变量选择方法综述

变量选择是统计分析与推断中的重要内容,也是当今研究的热点课题。本文系统介绍了线性回归模型中变量选择的研究概况和最新进展,并指出了有待进一步研究的问题。