排序方式: 共有63条查询结果,搜索用时 218 毫秒
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首次采用温度梯度法 (TGT)成功生长了直径为 76mm高光学质量的Ce :YAG高温闪烁晶体 ,采用ICP AES测试了Ce离子在Ce:YAG晶体中的分凝系数约为 0 .0 82。在室温下 ,测试了原生态Ce :YAG晶体的吸收光谱和X射线激发发射光谱 (XEL)。吸收光谱显示了Ce3 + 离子的 3个特征吸收带 ,对应的中心波长分别为 2 2 3nm ,340nm及4 6 0nm ;XEL发射谱表明Ce :YAG的发射峰为 5 5 0nm ,能与硅光二极管有效地耦合。 相似文献
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Ce:YAP晶体具有优良的闪烁性能,其主要特点是衰减时间短,光产额大,在高能射线探测、核医学等方面有着广阔的应用前景。考虑到Ce^3+离子浓度可能对晶体性能的影响,用中频感应加热提拉法生长了系列掺杂浓度为0.05%~0.6%的Ce:YAP闪烁晶体,晶体尺寸为垂50mm×80mm。室温下测试了不同浓度Ce:YAP晶体的透过、荧光、X射线激发发射、X射线激发衰减等特征,分析了Ce^3+离子浓度对Ce:YAP晶体的透过、荧光及闪烁性能的影响。结果表明:随着Ce^3+离子浓度增加,Ce:YAP晶体的吸收边发生红移,造成了样品的自吸收,从而影响到Ce:YAP晶体的光输出;且随Ce^3+离子浓度增加,Ce:YAP晶体的衰减时间减少。 相似文献
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By measuring the emission spectra and the fluorescence lifetime of the 4 I 13 /2 state of Er 3+ ions in Gd 2 SiO 5 crystal at different temperatures,the effects of temperature on the spectra and the lifetime of the 4 I 13 /2 state are investigated. When the temperature increases,the emission line width for the 4 I 13 /2 → 4 I 15 /2 transition is broadened,and the main emission lines at 1 596,1 609,and 1 644 nm shifte toward shorter wavelengths. The measured lifetime of the 4 I 13 /2 state decreases from 13.2 to 8.4 ms with temperature increase from 13 to 300 K,which is mainly due to the temperature dependence of multiphonon relaxation between the 4 I 13 /2 and 4 I 15 /2 states and the changing population distribution among the Stark levels within the 4 I 13 /2 state. The experimental results imply that low temperature condition is better for the ~1.6-μm laser output. 相似文献
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