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三聚氰胺和环三酮氢键复合物的理论研究 总被引:5,自引:0,他引:5
用AM1和PM3方法对三聚氰胺和环三酮衍生物的超分子复合物进行理论研究, 得到稳定化能和相对生成焓; 在AM1优化构型的基础上, 分别用INDO/SCI和AM1方法计算复合物的电子光谱和红外光谱. 结果表明, 两个单体通过氢键形成多聚体, 导致体系能量降低, 单体的电性和位阻差异能改变体系的稳定化能. LUMO-HOMO能隙的减小使电子光谱吸收峰发生红移, 氢键的形成削弱了单体原来的N-H键, 使红外振动频率变小. 相似文献
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用半经验AM1方法对苝二酸酐与嘧啶衍生物的1∶1及1∶2氢键复合物进行理论研究,表明随着氢键数目增多,弱相互作用能变大,主体上的供电基和客体上的吸电基有利于氢键相互作用,氢键导致电子从主体流向客体。用INDO/SCI方法计算配合物的电子光谱,表明其长波吸收峰与主体相比发生兰移,各配合物的长波吸收峰位置相差不大,与实验一致。讨论吸收峰兰移的原因并对电子跃迁进行理论指认,同时得到了配合物的双质子转移势能曲线,给出了相对于N-H键的过渡态和活化能。 相似文献
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Systematic studies on eight isomers of C70O were performed by means of INDO methods It has been indicated that the O atom is mainly added to the C1-C2 or C3-C3 bond and an epoxide feature with C1 symmetry is formed.Based on the optimized geometries,the UV-Vis spectra were calculated.It has been found that the main peaks of C70O resemble those of C70 and the characteristic absorptions beyond 460 nm are produced,which is m agree ment with the experimental results.Theoretical assignments about the absorptions were carried out and the reason for the red-shift of the absorptions was discussed.C70O is probably composed of four isomers according to the calculated results. 相似文献
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Influence of Annealing Temperature on Structure, Optical Loss and Laser-Induced Damage Threshold of TiO2 Thin Films 下载免费PDF全文
TiO2 thin films are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for 4h, the spectra and XRD patterns of the TiO2 thin film are obtained. Weak absorption of coatings is measured by the surface thermal lensing technique, and laser-induced damage threshold (LIDT) is determined. It is found that with the increasing annealing temperature, the transmittance of TiO2 films decreases. Especially when coatings are annealed at high temperature over 1173K, the optical loss is very serious. Weak absorption detection indicates that the absorption of coatings decreases firstly and then increases, and the absorption and defects play major roles in the LIDT of TiO2 thin films. 相似文献
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用INDO系列方法对C76Si2的17种可能异构体进行系统理论研究, 表明最稳定异构体是由C78(C2V)沿X方向椭球长轴所穿过的六元环上的2个C原子(29, 30)被Si取代所形成, 异构体稳定性随2个Si原子沿Z方向距离增加而降低, 且取代场所附近易成为进一步反应中心; C76Si2(29, 30)电子光谱吸收峰与C78相比发生红移, 主要是由于其对称性降低和LUMO- HOMO能隙变小。 相似文献