AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition

We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with an NbAlO high-k dielectric deposited by atomic layer deposition (ALD).Surface morphology of samples are observed by atomic force microscopy (AFM),indicating that the ALD NbAlO has an excellent-property surface.Moreover,the sharp transition from depletion to accumulation in capacitance-voltage (C-V)curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbAlO on AlGaN.The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm,and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT.Based on the improved direct-current operation,the NbAlO can be considered to be a potential gate oxide comparable to other dielectric insulators.     

快速傅立叶变换微磁学方法

提出了一种具有快速傅立叶变换的微磁学(FFTM)方法,并应用于二维纳米磁性系统.计算结果表明,利用该方法得到的结果与采用截短相互作用距离直接求和计算偶极相互作用能的方法得到的结果基本一致,同时其计算精度和计算速度得到很大的改善.结果证明FFTM方法能快速有效地计算包含远距离偶极相互作用的磁性系统的磁特性.