Solar cells

Solar cells are based on the photovoltaic effect of converting solar energy into electric energy. The mechanism for solar cells is divided into steps, that is, electron-hole pair generation by absorption of light in semiconductors, separation of electron-hole pairs by built-in potential, electron-hole recombination, collection of charge carriers by metal electrodes, etc. In this article, the principle and the theories of these basic steps are presented. On the basis of these steps, methods to improve the efficiency for solar cells are discussed. The fabrication process and the situation of currently produced solar cells are also presented. Solar cells having no p-n junction, that is, photoelectrochemical solar cells and MIS solar cells, are discussed from the perspective of low-cost solar cells.     

ELECTRODEPOSITION OF POLYCRYSTALLINE Cd-RICH Hg_(1-x)Cd_xTe AND PHOTOELECTROCHEMICAL BEHAVIOR OF Hg_(0.09)Cd_(0.91)Te THIN FILM

Electrodeposition process of polycrystalline Cd-rich Hg_(1-z)Cd_xTe (x>0.5) in acidic bath of CdSO_4+HTeO_2~+HgCl_2 was investigated. The simultaneous electrodeposition technique of three kinds of ions at the same potential has been achieved. The XRD, SEM and EDAX analysis of the thin film electrodeposited on titanium substrate showed a typical cubic zinc blende polycrystalline structure and homogeneous dispersion. The photoelectrochemical behavior of (1-x)=0.09 polycrystalline thin film in a polysulfide redox couple solution was examined. Under illumination of 100 mW/cm~2, the short circuit photocurrent I_(sc)=1.88 mA/cm~2, the open circuit photovoltage V_(oc)=0.25 V, the fill factor F·F=0.22. The bandgap E_g measured with photoelectrochemical spectroscopy is 1.26 eV. Flatband potential φ_(tb), Obtained from Mott-Schottky curve is -1.26 Ⅴ (vs. SCE). Therefore, the obtainable maximum open circuit photovoltage could be 0.49 Ⅴ. The Cd-rich Hg_(1-x)Cd_x Te thin film should be a potential photoactive el     

A Titanium‐Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite‐Based Photoelectrochemical System

This study introduces an in situ fabrication of nanoporous hematite with a Ti‐doped SiO_x passivation layer for a high‐performance water‐splitting system. The nanoporous hematite with a Ti‐doped SiO_x layer (Ti‐(SiO_x/np‐Fe₂O₃)) has a photocurrent density of 2.44 mA cm^?2 at 1.23 V_RHE and 3.70 mA cm^?2 at 1.50 V_RHE. When a cobalt phosphate co‐catalyst was applied to Ti‐(SiO_x/np‐Fe₂O₃), the photocurrent density reached 3.19 mA cm^?2 at 1.23 V_RHE with stability, which shows great potential of the use of the Ti‐doped SiO_x layer with a synergistic effect of decreased charge recombination, the increased number of active sites, and the reduced hole‐diffusion pathway from the hematite to the electrolyte.     

Dual Oxygen and Tungsten Vacancies on a WO3 Photoanode for Enhanced Water Oxidation

Alleviating charge recombination at the electrode/electrolyte interface by introducing an overlayer is considered an efficient approach to improve photoelectrochemical (PEC) water oxidation. A WO₃ overlayer with dual oxygen and tungsten vacancies was prepared by using a solution‐based reducing agent, LEDA (lithium dissolved in ethylenediamine), which improved the PEC performance of the mesoporous WO₃ photoanode dramatically. In comparison to the pristine samples, the interconnected WO₃ nanoparticles surrounded by a 2–2.5 nm thick overlayer exhibited a photocurrent density approximately 2.4 times higher and a marked cathodic shift of the onset potential, which is mainly attributed to the facilitative effect on interface charge transfer and the improved conductivity by enhanced charge carrier density. This simple and effective strategy may provide a new path to improve the PEC performance of other photoanodes.     

Full Characterization and Photoelectrochemical Behavior of Pyrene‐fused Octaazadecacene and Tetraazaoctacene

The preparation of large azaacenes is very important because of their great potential in organic electronics. In this report, we successfully synthesized and fully characterized two stable pyrene‐fused large azaacenes: octaazadecacene and tetraazaoctacene through employing a relatively moderate aromatic unit pyrene as imbedded species in the backbone of azaacenes to ensure large conjugation and stability. The photoelectrochemical (PEC) studies indicate that both azaacenes display n‐type semiconductor behavior.     

有机化合物表面光电压谱的研究

<正> 半导体与金属接触处产生表面势垒,当光照射在样品与金属的接触界面上时,在光照面和非光照面之间建立起电位差,记录这个电位差和入射光波长的关系得到表面光电压谱。表面光电压谱反映材料的光吸收性质和电子的带-带跃迁,同时又受到光生载流子寿命的影响。应用表面光电压技术已经测量了单晶半导体的光伏效应,少数载流子的扩散长度以及表面态等。近来,王德军等用表面光电压谱的方法研究了无机半导体粉末光催化剂的活性。     

Water oxidation with inhomogeneous metal-silicon interfaces

Silicon (Si) is a prime candidate for manufacturing water-splitting photoelectrochemical cells, however, the stability of this material remains a serious bottleneck. This is particularly true for the photoanode, subject to severe deactivation mechanisms. So far, thin film homogeneity has been the paradigm in the quest for stable and efficient Si-based photoanodes, which involved the use of vapor deposition methods to produce conformal thin films ensuring Si protection and efficient catalysis during operation. Conversely, recent reports on n-Si/metal thin film junctions have highlighted the benefits of the junction heterogeneity, generated in situ. In addition, results obtained from n-Si photoanodes partially covered with discontinuous films of Co and Ni nanoparticles lately suggested that homogeneity is not a prerequisite to reach efficiency and stability. Such findings may open new protection routes for Si-based photoanodes, breaking with classical strategies and allowing the use of liquid phase modification methods such as electrodeposition.     

氮掺杂TiO_2纳米线阵列优越的可见光光电性能(英文)

成功制备了氮掺杂锐钛矿TiO2纳米线,并研究了它的光电化学性质.结果表明,与商用P25 TiO2纳米粒子和未掺杂TiO2纳米线相比,氮掺杂TiO2纳米线作为光阳极明显地提高了光电转换效率(IPCE%),在可见光区有明显光吸收;在100 mW/cm2可见光光照下,氮掺杂TiO2纳米线具有最大的光电流密度和能量转换效率.例如,当电压为0.09 V(vs.Ag/AgC l)时最大能量转换效率为0.52%,均高于未掺杂TiO2纳米线和商用P25 TiO2纳米粒子的,充分表现出它优越的光响应和光电化学性能,在光电化学池、太阳能制氢等方面具有广泛的应用前景.     

铁掺杂TiO_2纳米管阵列制备及其光电化学性质

应用电化学阳极氧化法,以Fe(NO3)3-HF的混合水溶液作电解液在Ti基底上制备Fe掺杂TiO2纳米管阵列.FESEM、Raman、XPS、DRS等测试表明:经Fe掺杂的TiO2纳米管阵列,管径50~90 nm,管长约200nm.与未掺杂TiO2纳米管阵列相比,前者的紫外可见起始吸收带边随着Fe掺入量的增加而红移;而光电化学性质如光电流也随之显著提高.     

铁酸锌纳米半导体电极制备及其光电化学性质研究

本文首次制备并表征ＺｎＦｅ２Ｏ４纳米晶光伏电池。研究发现,ＺｎＦｅ２Ｏ４纳米晶光伏电池具有对可见光敏感、不发生光腐蚀及较好的光电转换特性等优点。探讨了各种因素对其光电化学性质的影响,结果表明：纳米半导体粒子快速的光致电荷分离及界面电子移特性是导致ＺｎＦｅ