Surface effects in the deformation of an anisotropic elastic material with nano-sized elliptical hole

We examine the effect of surface energy on an anisotropic elastic material weakened by an elliptical hole. A closed-form, full-field solution is derived using the standard Stroh formalism. In particular, explicit expressions for the hoop stress, normal, in-plane tangential and out-of-plane displacement components along the edge of the hole are obtained. These expressions clearly demonstrate the effect of elastic anisotropy of the bulk material on the corresponding field variables. When the material becomes isotropic, the hoop stress agrees with the well-known result in the literature while both the in-plane tangential and out-of-plane displacements vanish and the normal displacement is constant along the entire boundary of the elliptical hole.     

Synthesis of novel side‐chain triphenylamine polymers with azobenzene moieties via RAFT polymerization and investigation on their photoelectric properties

Two novel and well‐defined polymers, poly[6‐(5‐(diphenylamino)‐2‐((4‐methoxyphenyl)diazenyl)phenoxy)hexyl methacrylate] (PDMMA) and poly[6‐(4‐((3‐ethynylphenyl)diazenyl) phenoxy)hexyl methacrylate] (PDPMMA), which bear triphenylamine (TPA) incorporated to azobenzene either directly (PDMMA) or with an interval (PDPMMA) as pendant groups were successfully prepared via reversible addition‐fragmentation chain transfer polymerization technique. The electrochemical behaviors of PDPMMA and PDMMA were investigated by cyclic voltammograms (CV) measurement. The hole mobilities of the polymer films were determined by fitting the J‐V (current‐voltage) curve into the space‐charge‐limited current method. The influence of photoisomerization of the azobenzene moiety on the behaviors of fluorescence emission, CV and hole mobilities of these two polymers were studied. The fluorescent emission intensities of these two polymers in CH₂Cl₂ were increased by about 100 times after UV irradiation. The oxidation peak currents (I_OX) of the PDMMA and PDPMMA in CH₂Cl₂ were increased after UV irradiation. The photoisomerization of the azobenzene moiety in PDMMA had significant effect on the electrochemical behavior, compared with that in PDPMMA. The changes of the hole mobility before and after UV irradiation were very small for both polymers. The HOMO energies (E_HOMO, HOMO: the highest occupied molecular orbital) of side chain moieties of TPA incorporated with cis‐isomer and trans‐isomer of azobenzene in PDMMA and PDPMMA were obtained by theoretical calculation, which are basically consistent with the experimental results. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

An Adjustable Cleft Based on an 8-Sulfonamide-2-Naphthoic Acid with Oxyanion Hole Geometry

Cleft type receptors showing the oxyanion hole motif have been prepared in a straightforward synthesis starting from the commercial 3,7-dihidroxy-2-naphthoic acid. The double H-bond donor pattern is achieved by the introduction of a sulfonamide group in the C-8 position of naphthalene and a carboxamide at the C-2 position. This cleft, for which the geometry resembles that of an oxyanion hole, is able to adjust to different guests, as shown by the analysis of the X-ray crystal structures of associates with methanol or acetic acid. Combination of hydrogen bonds and charge-transfer interactions led to further stabilization of the complexes, in which the electron-rich aromatic ring of the receptor was close in space to the electron-deficient dinitroaromatic guests. Modelling studies and bidimensional NMR experiments have been carried out to provide additional information.     

On The Mechanism of “Hole Burning” In Vibronic Spectra of Complex Organic Compounds

The “hole burning” in continuous vibronic absorption spectra on photobleaching of dye solutions was usually investigated by two methods.     

Toward deformation densities for intramolecular interactions without radical reference states using the fragment,atom, localized,delocalized, and interatomic (FALDI) charge density decomposition scheme

A novel approach for calculating deformation densities is presented, which enables to calculate the deformation density resulting from a change between two chemical states, typically conformers, without the need for radical fragments. The Fragment, Atom, Localized, Delocalized, and Interatomic (FALDI) charge density decomposition scheme is introduced, which is applicable to static electron densities (FALDI‐ED), conformational deformation densities (FALDI‐DD) as well as orthodox fragment‐based deformation densities. The formation of an intramolecular NH⋅⋅⋅N interaction in protonated ethylene diamine is used as a case study where the FALDI‐based conformational deformation densities (with atomic or fragment resolution) are compared with an orthodox EDA‐based approach. Atomic and fragment deformation densities revealed in real‐space details that (i) pointed at the origin of density changes associated with the intramolecular H‐bond formation and (ii) fully support the IUPAC H‐bond representation. The FALDI scheme is equally applicable to intra‐ and intermolecular interactions. © 2017 Wiley Periodicals, Inc.     

In beam Mößbauer spectroscopy: 57Fe in semiconductors

Abstract

An overview of results on microscopic properties, implantation features and dynamics of Fe ions implanted into Si, Ge and ZnS as investigated with in beam Mößbauer spectroscopy(IBMS) is given. Potential and limitations of the method are discussed.     

One Way Traffic: Base-to-Backbone Hole Transfer in Nucleoside Phosphorodithioate

The directionality of the hole-transfer processes between DNA backbone and base was investigated by using phosphorodithioate [P(S⁻)=S] components. ESR spectroscopy in homogeneous frozen aqueous solutions and pulse radiolysis in aqueous solution at ambient temperature confirmed initial formation of G^.+-P(S⁻)=S. The ionization potential of G-P(S⁻)=S was calculated to be slightly lower than that of guanine in 5′-dGMP. Subsequent thermally activated hole transfer from G^.+ to P(S⁻)=S led to dithiyl radical (P-2S^.) formation on the μs timescale. In parallel, ESR spectroscopy, pulse radiolysis, and density functional theory (DFT) calculations confirmed P-2S^. formation in an abasic phosphorodithioate model compound. ESR investigations at low temperatures and higher G-P(S⁻)=S concentrations showed a bimolecular conversion of P-2S^. to the σ²-σ*¹-bonded dimer anion radical [-P-2S 2S-P-]⁻ [ΔG (150 K, DFT)=−7.2 kcal mol⁻¹]. However, [-P-2S 2S-P-]⁻ formation was not observed by pulse radiolysis [ΔG° (298 K, DFT)=−1.4 kcal mol⁻¹]. Neither P-2S^. nor [-P-2S 2S-P-]⁻ oxidized guanine base; only base-to-backbone hole transfer occurs in phosphorodithioate.     

Hole/Electron Transporting Materials for Nonfullerene Organic Solar Cells

Nonfullerene acceptor based organic solar cells (NF-OSCs) have witnessed rapid progress over the past few years owing to the intensive research efforts on novel electron donor and nonfullerene acceptor (NFA) materials, interfacial engineering, and device processing techniques. Interfacial layers including electron transporting layers (ETL) and hole transporting layers (HTLs) are crucially important in the OSCs for facilitating electron and hole extraction from the photoactive blend to the respective electrodes. In this review, the lates progress in both ETLs and HTLs for the currently prevailing NF-OSCs are discussed, in which the ETLs are summarized from the categories of metal oxides, metal chelates, non-conjugated electrolytes and conjugated electrolytes, and the HTLs are summarized from the categories of inorganic and organic materials. In addition, some bifunctional interlayer materials served as both ETLs and HTLs are also introduced. Finally, the prospects of ETL/HTL materials for NF-OSCs are provided.     

形状记忆合金椭圆孔口问题的有限单元法

基于Lagoudas形状记忆合金(SMA)三维本构模型,假设材料为各向同性,推导了SMA平面应力状态的增量型本构方程,继而编写了ABAQUS用户自定义材料(UMAT)子程序,研究了在双向拉伸情况下,外载荷、温度、椭圆孔口长短轴之比对超弹性SMA椭圆孔口板中应力诱发马氏体相变区的影响。数值结果表明:应力诱发马氏体相变首先发生在椭圆孔口长轴端点部位,在外加载荷作用下逐渐扩展到板内,并由内向外形成马氏体相区、相变混合区和奥氏体相区;SMA板内应力诱发马氏体完全相变区面积与施加外载荷成正相关,与温度成负相关;随着椭圆孔口长短轴之比增大,SMA板内应力诱发马氏体完全相变区面积呈现出先减小后增大的趋势;拉应力差值相同时,相较于拉应力沿椭圆孔口长轴方向较大的情况,当拉应力沿椭圆孔口短轴方向较大时,SMA板内完全相变区面积较大,椭圆孔口周边应力集中现象更明显。