Crystallization Mechanism of 9,9-Diphenyl-dibenzosilole from Solids

Organic semiconductor (OSC) crystals have great potential to be applied in many fields, as they can be flexibly designed according to the demands and show an outstanding device performance. However, OSCs with the capacity of solid-state crystallization (SSC) are developing too slowly to meet demands in productions and applications, due to their difficulties in molecular design and synthesis, unclear mechanism and high dependence on experimental conditions. In this work, in order to solve the problems, we synthesized an organic semiconductor capable of SSC at room temperature by adjusting the relationship between conjugated groups and functional groups. The thermodynamic and kinetic properties have been studied to discover the model of film SSC. Moreover, it can be purposefully controlled to prepare the high-quality crystals, and their corresponding organic electronic devices were further fabricated and discussed.     

Subwavelength lithography using metallic grating waveguide heterostructure

We present subwavelength periodic gratings achieved by employing a metallic grating waveguide heterostructure (MGWHS). The mask can be designed to make one of its diffraction order (±mth) waves resonate with the surface plasmon wave supported by the MGWHS. With a finite-difference time-domain method, we numerically demonstrate that one-dimensional periodic structure of about 60 nm feature, which is far beyond the diffraction limit, can be patterned with the interference of the 3rd diffraction order waves of the mask at a wavelength of 546 nm. The technique can also be extended to two-dimensional patterns using circularly polarized incidence and for the incidence with an angle θ.     

Cobalt determination with FI-FAAS after on-line sorbent preconcentration using 1-nitroso-2-naphthol

The suitability of 1-nitroso-2-naphthol (NN) as a complexing agent for on-line preconcentration of cobalt using C(18) microcolumn with FI-FAAS system has been tested. Various parameters affecting the complex formation and its elution were optimized. Reagent solution (2.5x10(-3) mol l(-1)) and aqueous sample solution acidified with 0.1% (v/v) nitric acid were on-line mixed in a reaction coil set at 65+/-1 degrees C and flowed through the microcolumn for 30 s. The pH of the mixed solution was adjusted to 3 approximately 4 by adding HNO(3) (1 mol l(-1)) or NaOH (1 mol l(-1)) in the reagent solution. The adsorbed complexes in the microcolumn were eluted with ethanol (acidified to 1% nitric acid) in 10 s into the nebulizer of FAAS. A good precision (1.6% for 100 mug l(-1) Co(II), n=10), high enrichment factor 17.2, with detection limit (3sigma) 3.2 mug l(-1), and sample throughput (90 h(-1)) were obtained. The method was applied on the certified reference materials (CRMs) i.e. NBS-362 and NBS-364 (special low alloy steel), for the determination of cobalt and the results were in good agreement with the certified values.     

Infrared spectrum of the novel electron-deficient BH(4) radical in solid neon

Laser-ablated boron reacts with hydrogen on condensation in excess neon to give BH4 radical, BH4- anion, and B2H6 as the major products. Identifications are based on 10B and D substitution, DFT frequency calculations, and comparison to previous spectra. Infrared spectra of BH4 support the C2v structure deduced from previous ESR spectra and theoretical calculations with two normal B-H bonds and two long B-H bonds for this novel electron-deficient radical. NBO analysis suggests that the two long B-H bonds and the H- -H bond are one-electron bonds.     

光子晶体的带隙破缺随插入介质层变化规律的研究

采用文中图1所示的一维光子晶体的缺陷模,应用光学传输矩阵法,证明了由光子晶体的缺陷结构引起的光子禁带破缺,得出:"f"(禁带破缺处对应的入射光频率)随"nc"(插入介质层的折射率)的增加线性下降,数值模拟了它们的几何图形.并根据f-nc的对应关系提出了一种测量介质折射率的方法.     

Intensity-modulating characteristics of a laser diode subjected to optical injection

We have found that the optical power of a laser diode (LD) does not change with the injected light intensity that is modulated when its injection current is at some specific values. The amplitude of optical power change of the LD varies periodically with the increase of the injection current. It is made clear through theoretical analysis that these phenomena are caused by gain compression and interband carrier absorption of the LD that depend on longitudinal mode competition, bandgap-shrinkage effects, thermal conduction, and so on. Our experimental results make it easy to eliminate optical power change of LDs. We only need to choose a proper value of the injection current.