Tl2Ba2CaCu2O8薄膜直流超导量子干涉器的噪声特性

本给出了Ｔｌ２Ｂａ２ＣａＣｕ２Ｏ８薄膜双晶结直流超导量子干涉器噪声测量的实验结果。与至今最好的ＹＢＣＯ薄膜器件噪声测量结果相比，铊器件１／ｆ特性低频噪声的起始频率要低二个数量级。本还详细介绍了器件在闭环工作模式时，其噪声频谱的测量方法。     

量子纠缠态的普适远程克隆

提出一种任意两粒子纠缠态1→2普适远程克隆方案. 此方案仅需一个特殊的四粒子纠缠态作为量子信道, 就可使处于空间不同位置的两个接收者分别以5/6的保真度得到任意输入态的近似拷贝, 该保真度远高于已有方案中的保真度. 将方案推广到任意两粒子纠缠态1→N(N>2)普适远程克隆的情况, 可使处于不同地点的N个接收者分别以(2N+1)/(3N)的保真度得到输入态的近似拷贝. 另外, 提出一种以上述单个特殊四粒子纠缠态作为量子信道, 在多目标量子比特受控非门和 关键词： 量子纠缠态 普适远程克隆 保真度     

La1/8Ca7/8MnO3/Sr0.95Nb0.05TiO3异质结的整流特性和磁输运性质

在5%Nb掺杂的SrTiO3衬底上用磁控溅射法外延生长了La1/aCa7/aMnO3薄膜形成异质结,该异质结有类似于传统P-n结的整流特性.磁场下扩散电压减小,当温度低于130 K以下,扩散电压的减小非常明显.这和在此温度以下,La1/8Ca7/aMnO3出现自旋倾斜态密切相关.我们计算出异质结的结电阻和磁致电阻(MR),在不同大小的正负偏压,不同磁场下,都得到负的MR值.我们给出界面附近的La1/8Ca7/8MnO3的能带结构并分析了外加磁场对洪德耦合,Jahn-Teller畸变等机制的作用,来解释该异质结的磁输运行为.结果有助于了解高Ca掺杂锰氧化物异质结的性质.     

A Scheme for Generating Entangled Squeezed States Based on Cavity QED

We propose a scheme for generating entangled squeezed vacuum states of electromagnetical fields. The scheme is based on cavity QED. In this scheme, an atom interacts, successively, with a classical field, two quantum cavity fields, and another classical field. By detecting the final states of the atom, the two quantum cavity fields will be projected to an entangled state.     

Efficiency Enhancement of Dye-Sensitized Solar Cells： Using Salt CuI as an Additive in an Ionic Liquid

Energy conversion efficiency of the dye-sensitized solar cell is improved from 3.5% to 4.5% by adding a small amount of CuI into an ionic liquid electrolyte. It is found that other copper-I salts, for example, CuBr, have the same effect for the dye-sensitized solar cell. Experimental results show that no Cu^2＋ ions exist in this electrolyte. It is suggested that this improvement is caused by the adsorption of Cu^＋ onto the TiO2 porous film.     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

Ce~(3+)在YGG中的光谱性质

本文首次报导并讨论Y_3Ga_5O_(12)石榴石中Ce~(3+)离子的漫反射吸收光谱,激发光谱及荧光性质。发现无论在紫外辐射,可见蓝光或电子束激发下,Ce~(3+)激活的YGG均呈现Ce~(3+)的5d-4f充许跃迁吸收和荧光性质。从440nm扩展到680nm附近的宽发射带是由于Ce~(3+)的最低的5d态跃迁到2FJ(J=5/2和7/2)终态结果。和YAG:Ce石榴石相比,YGG中Ce~(3+)的吸收带和发射带的位置向短波移动。     

13.5—14.6MeV能区中子引起的50Cr(n,2n)49Cr和52Cr(n,2n)51Cr核反应截面的测量

报告了在13.5-14.6MeV中子能区，用活化法(以93Nb(n，2n)92mNb反应截面为中子注量标准)测得的50Cr(n, 2n)49Cr和52Cr(n, 2n)51Cr的反应截面. 由能量为13.5±0.3 ,14.1±0.2,14.4±0.3 和14.6±0.3MeV的中子引起的50Cr(n, 2n)49Cr反应截面值分别为3.4±0.2,6.8±0.3,21.5±1.0 和25.0±1.2mb，52Cr(n, 2n)51Cr的反应截面值分别为185±10,193±9,258±13 和332±16mb. 单能中子用T(d,n)4He反应获得，其能量用铌锆截面比法测定. 另外，为避免热中子引发的50Cr(n, 2g)51Cr对52Cr(n, 2n)51Cr反应截面的影响，在样品被辐照过程中对样品进行了包镉处理，并将实验结果与尽可能收集到的其它实验数据进行了比较.     

基于最小错误率贝叶斯决策的企业员工招聘决策

本在[1]和[2]研究基础上，利用[1]、[2]中的分析模型和综合评价模型所得的结果。以及这两个结果正相关性。依据某大型国有企管理初级岗位3000多人的测试结果。采用最小错误率贝叶斯决策。构建了企业管理岗位初级人员招聘模型。此模型为企业根据企业化和价值观等来招聘符合企业要求的员工提供了一种方法。     

α-decay study of 218Ac and 221Th in 40Ar+186W reaction

In this study,²¹⁸Ac and ²²¹Th nuclides were produced via the heavy-ion induced fusion evaporation reaction ⁴⁰Ar+¹⁸⁶W.Their decay properties were studied with the help of the gas-filled recoil spectrometer SHANS and a digital data acquisition system.The cross section ratio between ²²²Pa and ²¹⁸Ac was extracted experimentally,withmeasured value 0.69(9).Two new possible α decay branches to ²²¹Th are suggested.The valence neutron configurations for the daughter ²¹⁷Ra are discussed in terms of the hindrance factors.