微纳米尺度膜/基结构界面性能的实验研究

为了研究铜膜/有机玻璃结构的界面性能,首先对沉积在有机玻璃基底上300nm厚的铜膜进行了单轴压缩实验,部分区域的薄膜因屈曲而脱离基底。选择在膜/基粘接良好区域、膜/基脱粘区域分别进行等位移纳米压痕实验。利用膜/基粘接良好区域处硬度/弹性模量与压痕位移的关系来确定膜/基结构的临界脱粘位移。基于宏观力学中表征界面性能的能量法,利用两个区域等位移的塑性功差值来确定界面能量释放率。研究结果表明:当压痕位移约450nm时,膜/基结构开始出现界面脱粘,实验测得铜膜/有机玻璃结构的界面能量释放率值在6.81~10.32J/m2之间。     

贴片云纹干涉法测复合应力强度因子

贴片法把Post提出的云纹干涉法向前推进了一步,它成本低、实验周期短、工艺简单,在一般光测力学实验室都可进行。由于贴片可以分离,使云纹干涉法用于现场测量成为可能。本文提出了估计裂纹尖端绝对位移的切点连线法。编写了可以计算尖端刚性位移和旋转的阻尼最小二乘法程序,应用单向栅线,测定复合应力强度因子,与理论值进行了比较,得到了满意的结果。计算和实验的位移场重合。     

第九届国际实验力学学术会议简介

１会议概况 国际实验力学学术会议（ＳＥＭ）是国际实验力学领域规模最大、涵盖领域最广、人数最多的国际性学术会议．该会议由国际实验力学学会主办,每４年举行一次．今年是第九届,于２０００年６月５日～８日在美国的佛罗里达的奥兰多 Ｆｌｏｒｉｄａ Ｏｒｌａｎｄｏ举行．参会人数３００多人,来自１５个国家,与会论文２５０多篇．我国留美学者和学生参会人数较多,我国学者参会人数为２人． 为了达到促进力学学科与工程学科和新兴学科的结合,促进力学学科的工程应用以及力学领域内的理论与实验相结合,本次实验力学会议同时还有两个…     

粘接双材料界面微区内力学行为的细观实验分析

本文将显微光栅与显微测距技术结合起来，实现了物体表面位移场的细观测量。应用这一方法，本文定量地测量了高分子粘接结构界面及周围区域的变形和应变，实验发现界面两侧存在着一个影响区，在影响区内材料的力学性质发生了变化。本文在实验结果的基础上讨论和分析了这一变化并对界面的力学模型进行了讨论。     

垂直界面裂纹断裂力学问题的实验研究

用实验方法研究了具有垂直界面方向裂纹的界面断裂力学问题．根据实验结果对裂尖区域的奇异性性质、角位移分布、应力强度因子等进行了分析，并将实验结果与理论结果进行了比较和讨论     

异质双材料粘接梁的界面端部应力及端部龟裂破坏的实验应力分析

本文采用了高灵敏度的云纹干涉法对异质双材料粘接梁在弯曲载荷作用下的位移进行了测量，用局部杂交法对界面端部区域的应变和应力进行了计算。通过对该区域内的实验应力分析发现：拉应力σｘ是影响结构强度的关键因素。本文还对在基体材料表面近角点区域可能出现的龟裂破坏的原因进行了分析。     

数字光弹性法综述

将光弹性法与计算机图像处理技术相结合 ,来自动采集光弹性数据和分析应力的方法 ,称为数字光弹性法 ,与传统光弹性法相比 ,它可以进一步提高实验速度和精度。本文详细讨论了以下两个方面 :一是光弹性条纹的细化和倍增处理技术 ;二是自动确定光弹性参数的技术 ,包括相移法、傅立叶变换法、逐步载荷法、广谱分析法和RGB光弹性法等。通过对近二十年来国内外在这些方面的研究、应用和进展作了综述 ,认为采用白光的彩色域相移技术计算光弹性等倾角 ,结合采用白光源或三色光源的相移法来确定光弹性等色线级数 ,有望成为解决静态二维和三维冻结模型薄切片应力分析的最佳方法 ;另外 ,设计一种能实时和同步采集多幅条纹图的实验装置 ,通过相移法来自动获取动态光弹性数据 ,是数字动态光弹性法很有前景的发展方向     

Experimental investigation of electrode cycle performance and electrochemical kinetic performance under stress loading

Lithium-ion batteries suffer from mechano–electrochemical coupling problems that directly determine the battery life. In this paper, we investigate the electrode electrochemical performance under stress conditions, where seven tensile/compressive stresses are designed and loaded on electrodes, thereby decoupling mechanics and electrochemistry through incremental stress loads. Four types of multi-group electrochemical tests under tensile/compressive stress loading and normal package loading are performed to quantitatively characterize the effects of tensile stress and compressive stress on cycle performance and the kinetic performance of a silicon composite electrode. Experiments show that a tensile stress improves the electrochemical performance of a silicon composite electrode, exhibiting increased specific capacity and capacity retention rate, reduced energy dissipation rate and impedances, enhanced reactivity, accelerated ion/electron migration and diffusion, and reduced polarization. Contrarily, a compressive stress has the opposite effect, inhibiting the electrochemical performance. The stress effect is nonlinear, and a more obvious suppression via compressive stress is observed than an enhancement via tensile stress. For example, a tensile stress of 675 k Pa increases diffusion coefficient by 32.5%, while a compressive stress reduces it by 35%. Based on the experimental results, the stress regulation mechanism is analyzed. Tensile stress loads increase the pores of the electrode material microstructure, providing more deformation spaces and ion/electron transport channels. This relieves contact compressive stress, strengthens diffusion/reaction, and reduces the degree of damage and energy dissipation. Thus, the essence of stress enhancement is that it improves and optimizes diffusion, reaction and stress in the microstructure of electrode material as well as their interactions via physical morphology.     

Residual Stress on Surface and Cross-section of Porous Silicon Studied by Micro-Raman Spectroscopy

Surface and cross-sectional residual stresses of electrochemical etching porous silicon are investigated quantitatively by micro-Raman spectroscopy. The results reveal that a larger tensile residual stress exists on the surface and increase linearly with the porosity. On the other hand, across the depth direction perpendicular to the surface, the tensile residual stress decreases gradually from the surface to regions near the interface between the porous silicon layer and the Si substrate. However, a compressive stress appears at the interface near to the Si substrate for balancing with the tensile stress in the porous silicon layer. The cross-sectional residual stress profile is due to the porosity and lattice mismatch gradients existing in the cross-section and influencing each other.Furthermore, the presented residual stresses of the porous silicon have a close relation with its microstructure.     

实时确定光弹性参数的积分相移法

积分相移法可以实时测量光弹性参数,在光弹性实验的某些变载测试中将有一定的发展潜力。推导了积分相移法三种典型算法,通过对径压缩圆盘问题的理论仿真模拟,考察了载荷变化对积分相移法的影响,给出了降低这种影响的具体措施。