间接馈电的磁通量压缩发生器的参数选择

 从电路方程出发较详细地分析了间接馈电的磁通量压缩发生器的工作原理。分析表明：在设计间接馈电的磁通量压缩发生器时，只有馈电回路的电感L₁和电容C₀满足(L₁C₀)^1/2>>T时，MFCG才有效运行；耦合形式的MFCG能使初始磁通量放大；馈电回路电容大小的选择将影响MFCG输出的电流脉冲形状。这些结论对于设计磁通量压缩发生器具有指导意义。     

纳米隧道结的量子电容现象

利用STM针尖和二维Au纳米团簇构造的双隧道结，通过对单电子隧穿谱的测量，研究了纳米隧道结的电容随隧道结宽度的变化，发现电容随结宽度的变化偏离了经典电容的行为，为纳米隧道结的量子电容效应提供了实验证据。     

小型静电陀螺仪电极面积及电极装配误差研究

介绍了小型静电陀螺仪的电极支承结构和电极面积误差引起的干扰力矩的计算公式,并根据影响电极面积的各种因素推导出了电极面积的误差范围。根据装配误差产生干扰力矩的情况确定了最终的装配精度,为电极的设计提供了重要的参考依据。     

容量矩阵法在涡方法中的应用

本文将容量矩阵技术与快速Fourier变换相结合求解非矩形域的Poisson方程,再与格子涡方法相结合,发展了一套求解复杂外形的快速涡方法。作为算例,计算了有厚度平板和楔形体的分离流动,得到了满意的结果。特别是在垂直平板绕流中,模拟出了由于剪切层不稳定性引起的小涡结构。     

Printable Bioelectronics To Investigate Functional Biological Interfaces

Thin‐film transistors can be used as high‐performance bioelectronic devices to accomplish tasks such as sensing or controlling the release of biological species as well as transducing the electrical activity of cells or even organs, such as the brain. Organic, graphene, or zinc oxide are used as convenient printable semiconducting layers and can lead to high‐performance low‐cost bioelectronic sensing devices that are potentially very useful for point‐of‐care applications. Among others, electrolyte‐gated transistors are of interest as they can be operated as capacitance‐modulated devices, because of the high capacitance of their charge double layers. Specifically, it is the capacitance of the biolayer, being lowest in a series of capacitors, which controls the output current of the device. Such an occurrence allows for extremely high sensitivity towards very weak interactions. All the aspects governing these processes are reviewed here.     

Void‐Assisted Ion‐Paired Proton Transfer at Water–Ionic Liquid Interfaces

At the water–trihexyl(tetradecyl)phosphonium tris(pentafluoroethyl)trifluorophosphate ([P_14,6,6,6][FAP]) ionic liquid interface, the unusual electrochemical transfer behavior of protons (H⁺) and deuterium ions (D⁺) was identified. Alkali metal cations (such as Li⁺, Na⁺, K⁺) did not undergo this transfer. H⁺/D⁺ transfers were assisted by the hydrophobic counter anion of the ionic liquid, [FAP]^?, resulting in the formation of a mixed capacitive layer from the filling of the latent voids within the anisotropic ionic liquid structure. This phenomenon could impact areas such as proton‐coupled electron transfers, fuel cells, and hydrogen storage where ionic liquids are used as aprotic solvents.     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

Co3O4/CoO/Co/石墨复合材料的制备及其电容性能研究

以葡萄糖为前驱物,采用水热法合成了胶态碳球,然后利用胶态碳球制备了Co3O4/CoO/Co/石墨复合材料.此复合材料与其它研究者采用类似方法制备的物质相比具有完全不同的结构,它们是由多层不同物质组成的球形结构,其最外层是Co3O4,第二层是CoO,第三层是Co,最里面一层是石墨.采用循环伏安和恒电流充放电等方法对Co3...     

Ce掺杂Mn3O4及其电化学电容行为

用溶胶-凝胶方法合成了Mn₃O₄和Ce掺杂Mn₃O₄. 采用X射线衍射(XRD)、傅里叶变换红外(FT-IR)光谱、场发射扫描电镜(FESEM)和透射电子显微镜(TEM)对其结构和形貌进行了表征. 采用循环伏安、电化学交流阻抗和恒流充放电技术对其电化学性能进行了测试. 研究结果表明, Ce掺杂对Mn₃O₄的形貌和电化学性能均有显著影响. 当Ce离子占金属离子总量的3%时, 掺杂Mn₃O₄的单电极比电容高达477 F·g^-1, 比未掺杂的提高了43.7%, 并且表现出更好的循环稳定性.     

Coral reef-like polyanaline nanotubes prepared by a reactive template of manganese oxide for supercapacitor electrode

Coral reef-like PANI nanotubes composed of nanopaticles were successfully synthesized by a reactive template of manganese oxide.The structure was characterized by using SEM,TEM,and FT-IR,and the supercapacitive behaviors of these nanotubes were investigated with cyclic voltammetry（CV）,and charge-discharge tests,respectively.A maximum specific capacitance of 533 F/g could be achieved in 1mol/L aqueous H₂SO₄ with the potential range of -0.2 to 0.8 V（vs.the saturated calomel electrode） in a half-cell setup configuration for PANI electrode,suggesting its potential application in the electrode material for electrochemical capacitors.