排序方式: 共有65条查询结果,搜索用时 15 毫秒
31.
Recovery of single event upset in advanced complementary metalben oxide semiconductor static random access memory cells 下载免费PDF全文
Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability. 相似文献
32.
利用矩阵的初等变换求方阵的特征值 总被引:1,自引:0,他引:1
高阶方阵的特征多项式以及特征值的求得,在计算上往往有一定的难度.本文首先从理论上分析了存在一个上三角矩阵或者下三角矩阵与一个方阵相似;接着,提出了相似变换的概念,分析了相似变换中初等矩阵的选择方法;然后指出了利用相似变换在求方阵的特征多项式以及特征值时的方法,并列举若干实例给予了说明. 相似文献
33.
四叔丁基金属酞菁催化活化CO2与环氧丙烷的环加成反应 总被引:8,自引:0,他引:8
以四叔丁基金属酞菁与三正丁胺等有机碱组成的二元催化体系催化活化CO2与环氧丙烷进行环加成反应制备碳酸丙烯酯.同一种金属酞菁与不同有机碱组成的二元催化体系的催化活性与有机碱的碱性强弱一致.有机碱的用量和反应时间对反应均有一定影响,温度对反应的影响较大.与未取代的金属酞菁相比,四叔丁基金属酞菁表现出更高的催化活性.四叔丁基酞菁镁的催化活性高于四叔丁基酞菁铁,在140℃,以四叔丁基金属酞菁镁/三正丁胺为催化剂,碳酸丙烯酯的产率达90.4%. 相似文献
34.
35.
为了实现低附带弹药金属颗粒定向可控加载,研制了采用爆轰方式驱动低附带弹药金属颗粒的发射装置,并进行了不同尺寸钨球颗粒与不同装药比的发射实验。运用高速摄影与高速红外摄影捕捉爆轰驱动过程中颗粒抛撒分布和速度,并采用CT断层扫描和三维图像重建再现了颗粒在肥皂靶中的三维空间分布。实验结果揭示了爆轰驱动下颗粒加速、减速和散落3个阶段的特征。钨球颗粒速度均值范围为689.84~889.14 m/s,最大侵彻深度为65.23~167.35 mm,颗粒加载上靶率在30%以上。发射装置中金属颗粒/装药质量比可调,能重复使用。采用肥皂靶、高速摄影、高速红外相结合的测试方法有效可行,CT图像重建用于终点弹道参数判读能提高结果分析精度。以上结果可为研究低附带弹药对生物目标的毁伤效应、致伤机理和生物损伤判定与救治提供有效可行的技术与方法。 相似文献
36.
37.
38.
As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal-oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. 相似文献
39.
40.
利用浓硫酸的脱水性能,在低温下快速处理氧化石墨烯得到硫酸脱水还原石墨烯材料。研究了不同处理方法对材料结构和电容性能的影响。结果表明:一步浓硫酸脱水法对氧化石墨烯的还原效果和水合肼相当;经过稀硫酸开环预处理后,浓硫酸(70℃,30 min)对氧化石墨烯表面含氧官能团的脱除效果更加明显。两步硫酸脱水还原法得到样品的还原程度更高,堆积层数少;形成的石墨微晶区域的数量多,尺寸小。电容测试结果表明,对比于传统的水合肼还原法,浓硫酸脱水法得到的石墨烯材料有更好的电化学性能;两步浓硫酸脱水法得到石墨烯电极材料的比电容为321.8 F·g-1,经1000次循环伏安测试后,电容保持率为89.7%。 相似文献