X射线分析氢化物汽相外延法生长GaN薄膜

氮化物研究在90年代取得显著进步,成功制造出蓝色发光二极管和激光二极管.由于氮化镓与衬底(如:蓝宝石,碳花硅)间存在大的晶格常数和热膨胀系数失配,外延膜中有非常高的位错密度.研究氢化物汽相外延法生长的氮化镓膜中倾斜和扭转现象,并应用到以X射线摇摆曲线的半峰宽计算氮化镓膜中位错密度.Ф扫描曲线表征外延的氮化镓晶体六方对称性,而极图表明氮化镓膜中存在马赛克结构.计算出螺位错密度为:2.93×109cm-2和刃位错密度为:5.25×1010cm-2.     

GaN基白光LED的研制与特性

本文报导了通过低压金属有机物化学气相沉积(MOCVD)的InGaN/GaN量子阱蓝光发光二极管(LED)与钇铝石榴石(YAG)荧光粉结合而得的白光发光二极管(W-LED).在室温、正向电流20mA时,W-LED轴向亮度为170mcd,显色指数(CRI)达到82,色温(CCT)为7448K,CIE色坐标是(0.296,0.316),接近纯白色(0.33,0.33).随着注入电流的增强,测量并探讨了白光LED的发射光谱与发光强度的变化.     

计算分子中原子净电荷的新方法及芳烃亲电取代反应定位效应的定量处理

本文提出一种简捷计算分子中原子净电荷的新方法。用这种方法计算了２３种一元取代苯的原子净电荷。计算所得苯环上碳原子净电荷与其￣（１３）Ｃ－ＮＭＲ化学位移有良好的线性关系。利用苯环上碳原子净电荷及立体参数作为输入参数，应用人工神经网络方法预报２４种一元取代苯硝化反应的邻、间、对位产物产率，结果良好。     

Microstructure Study on Heterostructures of AIInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Channelling and XRD

A quaternary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with a thick （〉 1μm） GaN intermediate layer. The compositions of In and A1 are determined by Rutherford backscattering （RBS）. The low ratio between the channelling yield and random yield according to the spectra of RBS/C （χmin = 1.44%） means that the crystal quality of the AllnGaN film is perfect. The perpendicular and the parallel elastic strain of the AIlnGaN layer, e^⊥=-0.15% and e^//= 0.16%, respectively, are derived using a combination of XRD and RBS/channelling.     

GaN基LED电流扩展的有限元模型及电极结构优化

针对目前蓝宝石衬底上外延生长制备的GaN基半导体发光二极管(LED)器件存在电流分布不均匀的问题,建立了LED的电流扩展模型,提出了定量评价其特性的参数和标准。通过用有限元方法计算LED中电流的三维空间分布,对不同的电极结构进行了定量的比较,给出了优化的电极结构。计算结果显示,在相同工艺参数下,采用插指型电极结构的LED与采用传统型电极结构和扩展正极型电极结构的LED相比,电流扩展更均匀,串联电阻更小。在此基础上,对插指型电极结构作了进一步的参数优化,得出了使LED的串联电阻取最小值时的插指型电极的结构参数。根据优化得到的参数制作了相应的LED样品,并与采用扩展正极型电极结构的LED做了对比实验。实验结果表明,计算得出的结果与实验结果符合得很好。采用了优化后的插指型电极结构的LED与采用扩展正极型电极结构的LED相比,前者的串联电阻仅为后者的44.4%。     

从不纯样品的光谱中提取单一组分和结构的拉曼谱

X射线衍射谱和拉曼光谱均证实所用的SiC和GaN样品为不纯的非晶样品。通过新采取的减去经加权的“杂质”光谱的方法,从不纯的非晶样品的拉曼光谱中获取了纯非晶SiC和GaN的拉曼光谱,并由理论计算的声子态密度与减去“杂质”光谱的拉曼光谱很好相符,进一步证实减去“杂质”光谱的拉曼光谱确实是非晶拉曼光谱,从而表明新采用的扣除加权“杂质”光谱的方法是正确和具有广泛应用价值的。     

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on Vca related defects are observed from photoluminescenee measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different （n-type GaN and p-type GaN） templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.     

Dopant Effects on Defects in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray dit~action and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample.The effects of the dopants on the, etching pits were discussed.     

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes （LEDs） grown by metalorganic chemical vapour deposition is investigated by using photoluminescence （PL） and highresolution x-ray diffraction. The full width at half maximum of PL of A1 doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.     

Anticrossing Gap between Pairs of the Subbands in AlxGa1-xN/GaN Double Quantum Wells

Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-xN/GaN double quantum wells （DQWs） on the width and the Al composition of the central barrier of the DQWs and on the well width of the DQWs have been investigated by solving the Schroedinger and Poisson equations self-consistently. It is found that the anticrossing gaps are not influenced by the polarization-induced electric field in the DQWs. The anticrossing gaps decrease with increasing the width and the Al composition of the central barrier of the DQWs, as well as with the increasing well width of the DQWs. According to the results of the calculation, the anticrossing gaps can reach 150 meV in AlxGa1-xN/GaN DQWs. There is significant coupling between the two wells of the DQWs when the width of the central barrier of the DQWs is narrower than 2nm.