Trends in ultrashort and ultrahigh power laser pulses based on optical parametric chirped pulse amplification

Since the proof-of-principle demonstration of optical parametric amplification to efficiently amplify chirped laser pulses in 1992,optical parametric chirped pulse amplification(OPCPA)became the most promising method for the amplification of broadband optical pulses.In the meantime,we are witnessing an exciting progress in the development of powerful and ultrashort pulse laser systems that employ chirped pulse parametric amplifiers.The output power and pulse duration of these systems have ranged from a few gigawatts to hundreds of terawatts with a potential of tens of petawatts power level.Meanwhile,the output pulse duration based on optical parametric amplification has entered the range of fewoptical-cycle field.In this paper,we overview the basic principles,trends in development,and current state of the ultrashort and laser systems based on OPCPA,respectively.     

咖啡酸与DNA相互作用的电化学研究

用电化学方法研究了咖啡酸与DNA的相互作用,考察了扫速对咖啡酸与DNA相互作用的影响。实验表明,DNA存在使咖啡酸氧化峰的电位正移,咖啡酸的氧化峰峰电流减小,咖啡酸在320 nm吸收光谱的吸收峰降低,呈减色效应,且出现两个等电吸收点,说明咖啡酸与DNA的相互作用以嵌插作用为主。双链DNA(dsDNA)与咖啡酸的结合能力大于单链DNA(ssDNA),结合比为1∶1,结合常数β为2.32×106。     

Kerr介质中双原子-压缩真空场系统的腔场谱

研究了含Kerr介质腔中耦合双原子间与双模均处于压缩真空态的光场拉曼相互作用过程的腔场谱.通过求解本征方程导出了双模光场处于任意强度时腔场谱的计算公式,给出了数值计算结果.发现在两模初始场均为弱场时,Kerr介质和原子间的耦合作用对谱结构的影响较小;当双模初始场均为强场时,两模主峰的右侧出现了半梳状边峰,随Kerr效应的增强,峰间距逐渐加宽,并向高频方向扩展,在Kerr效应较强时,两模边峰的峰高出现高低相间的现象.     

Coherent Scattering of Light by Bose-Einstein Condensation in a Tight Confinement

We have observed strong scattering of a probe light by dilute Bose-Einstein condensate （BEC） ^87Rb gas in a tight magnetic trap. The scattering light forms fringes at the image plane. It is found that we can infer the real size of the condensation and the number of the atoms by modelling the imaging system. We present a quantitative calculation of light scattering by the condensed atoms. The calculation shows that the experimental results agree well with the prediction of the generalized diffraction theory, and thus we can directly observe the phase transition of BEC in a tight trap.     

Semiconductor-Optical-Amplifier-Based Inverted and Non-Inverted Wavelength Conversion at 40 Gb/s Using a Detuning Optical Bandpass Filter

We experimentally demonstrate 40Gb/s semiconductor-optical-amplifier-based tunable wavelength conversion （WC） using a detuning optical bandpass filter. Both inverted and non-inverted WCs are obtained by shifting the filter central wavelength with respect to the probe wavelength. When the filter is red shifted by 0.4nm or blue shifted by 0.3nm, the WC is non-inverted. However, when the filter is blue shifted by 0.1 nm, the WC is inverted. It is experimentally demonstrated that the WC has a tunable range covering the C-band.     

先进的微生物芯片检测系统及其应用

发展了一种先进的微生物芯片检测方法,并研制用于芯片检测的新型数字化成像扫描检测系统。采用激光诱导荧光的检测原理设计一种新颖的CCD数字化成像扫描检测系统结构,荧光信号采集端的数值孔径NA=0．72,工作距离3．22 mm,系统检测灵敏度小于每平方微米1个荧光分子。以微生物大肠杆菌和黄单胞菌检测为例,设计基因芯片,并应用所研制的芯片检测系统实现了微生物的正确鉴定,提供了一种高效的食品安全检测整体解决方法。实验结果表明两种微生物的芯片检测实验结果稳定可靠,与国外共焦扫描仪检测的结果完全一致。     

斯塔克效应对两模双光子J-C模型腔场谱的影响

研究了斯塔克(Stark)效应对两模双光子Jaynes-Cummings(J-C)模型腔场谱的影响,推导计算出了腔场处于光子数态时腔场谱的计算公式和数值结果,讨论了斯塔克效应和初始场强对腔场谱的影响。发现斯塔克效应在弱场条件下对腔场谱线的频率和强度都有明显的影响,破坏了谱结构的对称性,使两模的谱线更加丰富。初始场较强时斯塔克效应对谱线的影响较弱。模Ⅰ为真空场、模Ⅱ初始场强递增时,斯塔克效应使模Ⅱ的高频峰受到较强的抑制作用,其低频峰在初始场较弱时受到抑制,初始场较强时又有强化作用,初始场更强时,模Ⅱ的谱线退化为经典的共振荧光谱,与无斯塔克效应的情况基本相同。     

火焰原子吸收光谱法测定环境样品中生物可利用镉

采用火焰原子吸收光谱法,结合3步连续萃取,测定了环境样品中的生物可利用镉的含量,该方法的检出限为0.029mg/L,加标回收率94.0%-103.2%,相对标准偏差(RSD)3.9%-4.9%,测定结果准确可靠.     

All-Optical RZ-to-NRZ Format Conversion with a Tunable Fibre Based Delay Interferometer

All-optical format conversion from return-to-zero （RZ） to non-return-to-zero （NRZ） is demonstrated with temperaturecontrolled all-fibre delay interferometer （DI） at 20 Gb/s. The operation principle is theoretical analysed with the help of numerical simulation and spectra analysis. Theoretical analysis results are consistent well with the experimental results. The format conversion can be achieved with power penalty of 0.54 dB and with output extinction ratio 20 dB.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.