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21.
Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study 下载免费PDF全文
The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene. 相似文献
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为实现对金属粉末压坯烧结过程的实时观测,从而验证现有的相关理论,本文利用同步辐射CT(SR-CT)技术,对铝压制陶瓷坯体的固相烧结过程进行实时投影成像;应用滤波反投影算法和数字图像处理技术,得到了陶瓷坯体在整个固相烧结过程中内部微结构演化的三维重建图像,实现了对铝压制陶瓷坯体整个固相烧结过程的无损原位观测,得到了样品由烧结中期进入烧结后期的完整的演化过程图像。通过重建图像,清晰观测了样品的固相烧结过程:在烧结前、中期(烧结时间t<180min、温度T<600℃),烧结颈形成并随烧结时间生长;由烧结中期开始进入后期时(烧结时间t≥180min、温度T≥600℃),样品内部结构演化加剧,气孔由相互连通演化为相互孤立并球化。进一步在实验图像的基础上分析了二面角等烧结特征的变化情况,得到烧结颈尺寸与时间对数有较好的线性关系,并可根据曲线分辨中期、后期。统计了样品在不同烧结时间的孔隙率,得到了孔隙率随烧结时间和烧结时间对数的变化曲线;分析了样品在不同烧结阶段的致密化特点,得到了烧结中期孔隙率和时间对数的线性关系。实验结果验证了现有的烧结理论,并为进一步完善烧结理论以及建立扩散和本构模型提供了高质量的实验数据。 相似文献
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In this work, pronounced oscillations in the time-resolved reflectivity of Heusler alloy Co_2MnAl films which are epitaxially grown on Ga As substrates are observed and investigated as a function of film thickness, probe wavelength,external magnetic field and temperature. Our results suggest that the oscillation response at 24.5 GHz results from the coherent phonon generation in Co_2MnAl film and can be explained by a propagating strain pulse model. From the probe wavelength dependent oscillation frequency, a sound velocity of(3.85±0.1)×10~3m/s at 800 nm for the epitaxial Co_2MnAl film is determined at room temperature. The detected coherent acoustic phonon generation in Co_2MnAl reported in this work provides a valuable reference for exploring the high-speed magnetization manipulation via magnetoelastic coupling for future spintronic devices based on Heusler alloy films. 相似文献
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针对石英晶体各向异性的特点,设计了一种驱动梁为双"W"截面形状的石英音叉微机械陀螺,通过在驱动梁表面凹槽两端设置深凹槽,有效提高了凹槽侧壁的陡直性,进而提高了驱动梁内部电场的激励效率和陀螺灵敏度。采用有限元仿真的方法,分析了不同截面形状的驱动梁压电激励力的相对大小,优化设计了陀螺芯片结构参数。依据陀螺芯片的结构,设计了合理的工艺方案并在3英寸石英圆片上制作出了三种驱动梁截面形状的陀螺器件,测试结果表明,相对于矩形驱动梁截面的陀螺芯片,双"W"形驱动梁截面的陀螺芯片的灵敏度提高约60%。 相似文献
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Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy 下载免费PDF全文
We report the structure and magnetic properties of (In,Mn)As based core-shell nanowires grown on Si (111) by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that (In,Mn)As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of (In,Mn)As from magnetic measurement data are observed: one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ~300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of (In,Mn)As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials. 相似文献
26.
Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet 下载免费PDF全文
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications. 相似文献
27.
在GaAs吸收带边附近, 利用磁光Kerr效应测量了(Ga,Mn)As和p-GaAs样品的电流诱导Kerr旋转谱和反射谱, 两者都呈现出Lorentz曲线形状. 电流诱导Kerr旋转角和反射率随着电流的增大而增大, Kerr角与电流的大小成正比关系, 反射率与电流的平方成正比关系. (Ga,Mn)As的Kerr旋转角比p-GaAs的大了一个数量级, 这说明Mn原子的掺杂使得电流诱导的自旋极化增强. 另外, 还测量了温度和入射光偏振方向对电流诱导Kerr旋转谱和反射谱的影响. 发现随着温度的升高, Kerr谱和反射谱均向长波方向移动, 这与GaAs带边随温度的变化是一致的. 相似文献
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