Fabrication of high-power VCSEL with radial bridge electrodes

We report the fabrication of a novel high-power vertical-cavity surface-emitting laser （VCSEL） with radial bridge electrodes in this letter. The analysis shows that the radial bridge electrodes can reduce the p-type distributed Bragg reflector （p-DBR） electric and thermal resistance, and improve the device beam quality. The high-power radial brigde electrode VCSELs with 200-μm aperture have been made and tested. The testing results show that the differential resistance of the VCSEL is 0.43 Ω and the maximal continuouswave （CW） output power is 340 mW, 1.7 times higher than the conventional electrode device. Its thermal resistance is 0.095℃/mW, and its near-field pattern exhibits a homogeneous distribution. The high-power radial bridge electrode VCSEL has better temperature and opto-electric characteristics.     

一锅法制备S型异质结光催化剂Fe2O3/Fe2TiO5及其高效降解有机污染物性能

首次采用简单的一锅法制备了Fe₂O₃/Fe₂TiO₅异质结纳米材料。构建S型异质结后,与纯的Fe₂O₃和Fe₂TiO₅相比,Fe₂O₃/Fe₂TiO₅复合材料表现出更高的光催化降解速率和效率。经过2.5 h的光照后,Fe₂O₃/Fe₂TiO₅可以降解接近100%的亚甲基蓝（MB）。在Fe₂O₃/Fe₂TiO₅复合材料中,Fe₂O₃和Fe₂TiO₅之间形成了内建电场,可以促进光生电子-空穴对的分离。因此,具有更高能量的Fe₂TiO₅导带中的电子和具有更高能量的Fe₂O₃价带中的空穴可以得到有效的保留,从而使它们更加有效地扩散到催化剂表面,并参加降解反应。此外,Fe₂O₃/Fe₂TiO₅复合材料具有很好的光催化稳定性。     

钙钛矿阵列化组装及其多功能探测器的应用

钙钛矿材料优异的光电性能使其在高集成、 高性能、 多功能光电探测领域具有广泛的应用前景. 近年来, 科研人员致力于钙钛矿阵列化探测器的研究, 并取得了一系列重要的成果. 本文重点评述了钙钛矿材料的阵列化及其多功能探测器的制备和应用, 介绍了钙钛矿材料的结构分类、 阵列化集成方法及光电探测器的基本器件类型和性能指标, 并进一步阐述了基于钙钛矿一维阵列的高性能光电探测器及其多功能探测器的相关应用研究进展. 最后, 对该研究领域未来的发展方向进行了总结和展望.     

Oxide-apertured VCSEL with short period superlattice

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS)used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward (111)A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 ℃ and the threshold current increased slowly with the increase of temperature.     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.