Finite Group with Two Supersolvable Subgroups of Coprime Indices

Ｔｈｒｏｕｇｈｏｕｔｔｈｉｓｐａｐｅｒ,Ｇｉｓａｆｉｎｉｔｅｇｒｏｕｐ ,ｐｉｓａｐｒｉｍｅｉｎπ(Ｇ) ,ａｎｄＭ <·ＧｄｅｎｏｔｅｓｔｈａｔＭｉｓａｍａｘｉｍａｌｓｕｂｇｒｏｕｐｏｆＧ .Ａ/ＢｉｓｃａｌｌｅｄａｓｅｃｔｉｏｎｏｆＧｉｆＢ Ａ≤Ｇ .Ｔｈｅｒｅｓｔｏｆｎｏｔａｔｉｏｎｓｉｓｓｔａｎｄａｒｄａｎｄｔａｋｅｎｍａｉｎｌｙｆｒｏｍ [1 ]ａｎｄ [2 ] .　Ｉｎ [3] ,Ｗｅｉｌａｎｄｔｐｒｏｖｅｄｔｈｅｗｅｌｌ ｋｎｏｗｎｔｈｅｏｒｅｍ :Ｇｉｓｓｏｌｖａｂｌｅｉｆｉｔｃｏｎｔａｉｎｓｔｗｏｎｉｌｐｏｔｅ…     

一步电沉积法制备TiSBA/CHIT/乙酰胆碱酯酶生物传感器及其应用研究

近年来,介孔分子筛因具有比表面大、孔径分布窄和易调变,以及良好的化学稳定性和化学改性容易等优点,其作为酶的固定化载体已被用于生物传感器的研究~([1]).     

激光径向偏振光栅反射镜的研究

径向偏振光是近些年引起广泛关注的一种新型偏振光,它在粒子操控、金属切割和提高显微镜分辨率方面具有广阔的应用前景。径向偏振光可以通过在激光器谐振腔内应用径向偏振光栅反射镜来获得。首先在顶层刻蚀光栅反射镜的模型上通过自编程序分析光栅反射镜各参数对光栅性能的影响,然后设计出光栅反射镜复合结构并结合微纳加工工艺进行了可行性分析。     

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为了准确计算稠密等离子体电离平衡,在理想Saha方程的基础上,加入了压致电离理论和德拜理论相结合的修正。此电离模型可以描述稠密等离子体内电离机制随着密度的增加由热电离转变为压致电离的现象。压致电离理论结合德拜理论修正的 Saha 方程的计算结果与其它电离模型结果作了对比和分析。电离气体区域采用完全电离等离子体模型计算电子弛豫时间,而在凝聚态区域采用电子平均自由程计算电子弛豫时间。提出了将两个区域平滑连接起来的公式,从而建立了一种可以计算从理想等离子体态到凝聚态物质的半经验电导率模型,半经验模型计算结果与实验数据作了对比。     

真空中铝单丝电爆炸的实验研究

开展了铝单丝在负极性电流脉冲作用下电爆炸特性的研究.利用皮秒激光探针,搭建了阴影、纹影和干涉的光学诊断平台,得到了不镀膜铝丝典型的能量沉积过程,在电压崩溃时刻其沉积能量为2.4 eV/atom.为了增加金属丝内的沉积能量,开展了相同电参数及金属丝尺寸下的镀膜铝丝电爆炸实验,其沉积能量可达到5 eV/atom,实现了在电压崩溃之前铝丝完全气化(完全气化所需能量为4 eV/atom).阴影图像展示了高密度丝核区域的膨胀过程,不镀膜铝丝平均膨胀速度为2.2 km/s,而镀膜铝丝因为沉积能量大,其膨胀速度约为不镀膜铝丝的2.3倍,高密度区域膨胀速度为5 km/s.由于阴影不能反映低密度等离子体的膨胀,开展了平行双丝实验,通过测量自发光辐射,估算了低密度等离子体的膨胀速度.利用条纹相机拍摄了不镀膜铝丝电爆炸过程中自发光区域的图像.纹影图像清晰地展示了不镀膜铝丝在电爆炸过程中形成的核冕结构,而镀膜铝丝电爆炸过程中核冕结构得到了一定程度的抑制.从干涉图像计算了相移,在轴对称假设下对相移进行阿贝尔逆变换,重构了三维的铝原子数密度分布.     

S-半正规性与P-幂零性

In this paper, we deal mainly with the following problem: if every 2-maximal subgroup of a Sylow p-subgroup of a finite group G is S-seminormal in G, what conditions force G to be p-nilpotent? As an application of main results, some sufficient conditions for finite nilpotent groups and finite supersolvable groups are obtained.     

制冷空调系统替代工质的发展现状及方向

本文主要针对CFC11、CFC12以及HCFC22介绍了目前替代工质的发展现状,阐述了混合工质以及氨、二氧化碳、碳氢化合物等自然工质作为替代工质的特点以及其发展现状,总结了制冷空调系统替代工质的发展方向。     

氧气氛中p-GaN/Ni/Au电极在相同温度不同合金时间下的欧姆接触形成机制和扩散行为

用卢瑟福背散射/沟道技术研究了p-GaN上的Ni/Au电极在氧气氛下相同合金温度(500℃)不同合金时间后的微结构演化,以揭示欧姆接触的形成机制.利用背散射随机谱和RUMP模拟程序研究了电极金属之间的互扩散,用沟道谱探测了电极金属中的氧分布.结合不同合金时间下比接触电阻ρ_c的变化,发现随着合金时间的延长比接触电阻持续降低,在合金时间60 s后降低的速度减慢, Au扩散到GaN的表面,在p-GaN上形成外延结构,O向电极内部扩散反应生成NiO对降低ρ_{关键词： GaN 卢瑟福背散射/沟道 欧姆接触}     

Structure Characterization of Modified Polyimide Films Irradiated by 2MeV Si Ions

Structures of polyimide （6051） films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional groups in polyimide are investigated by attenuated total reflection Fourier transform infrared spectroscopy （ATR-FTIR） and Raman spectroscopy. The results indicate that the functional groups can be destroyed gradually with the increasing ion fluenee. The variations of structure and element contents are characterized by x-ray diffraction （XRD）, Rutherford backscattering spectrometry （RBS） and x- ray photoelectron spectroscopy （XPS）. The results indicate that the contents of N and O decrease significantly compared with the original samples, some graphite-like and carbon-rich phases are formed in the process of irradiation.     

Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.90/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling

Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.90/ZnO heterostructare grown on a sapphire （0001） substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.90 layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with xmin = 5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal （1213） axis in the {1010} plane of both ZnO and MgZnO layer, the tetragonal distortion εT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of εT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.