甲烷在外场作用下的光激发特性研究

采用密度泛函B3LYP和组态相互作用方法在6-311++G^**水平上计算了甲烷从基 态到前六个激发态的跃迁波长，振子强度，自发辐射系数A_n0和吸收系数B _0n（ n=1—6）.同时研究了外电场对甲烷分子的激发态的影响规律.结果表明，随外电场强度增大 ，系统总能量变化较小，同时最高占据轨道HOMO与最低空轨道LUMO的能隙gaps变小，费米能 级Fermi levels略有下降.甲烷基态（X～^lＡ_l）在外场作用下，易 于向高激发态产生跃迁. 关键词： 4')" href="#">CH₄ 激发态 外电场     

八极矩外电场作用下CH3的基态和激发态研究

采用密度泛函和含时密度泛函方法在6- 311g**基组水平上对比研究了八极矩外电场对CH3自由基的几何构型、轨道能级分布、激发能、振子强度以及电偶极矩、原子电荷数和离解能等特性的影响.结果表明,在外电场作用下甲基的激发能,偶极矩和极化率上升,离解能下降,说明较强外电场的作用有助于CH3的离解.     

宽频带碳团簇型吸波涂层的制备与性能

为满足对吸波涂层薄、轻、宽的要求,通过吸波涂层的优化设计,制备了密度较低的宽频带碳团簇型吸波涂层.该涂层为三层结构,总厚度为2.10 mm,在8～12.4GHz频率范围内,对微波的最小反射率为-42dB,其中反射率小于-10dB的工作频带达90%以上,且性能稳定,有较好的实用前景.     

LiH分子X^1∑^＋、A^1∑^＋和B^1П态的势能函数

利用SAC／SAC—CI方法，使用D95（d）、6-311G＊＊及CC—PVTZ等基组，对LiH分子的基态（X^1∑^＋）、第一激发态（A^1∑^＋）及第二简并激发态（B^1П）的平衡结构和谐振频率进行了优化计算．通过对三个基组的计算结果的比较，得出了D95（d）基组为三个基组中的最优基组的结论；使用D95（d）基组，利用SAC的GSUM（Group Sum of Operators）方法对基态（X^1∑^＋）、SAC—CI的GSUM方法对激发态（A^1∑^＋和B ^1П）进行单点能扫描计算，用正规方程组拟合Murrell—Sorbie函数，得到了相应电子态的完整势能函数；从得到的势能函数计算了与基态（X ^1∑^＋）相对应的光谱常数，结果与实验数据较为一致．     

外电场作用下SiO电子结构特性研究

在得到SiO分子基态稳定构型的基础上，选用B3P86/6-311++g(d，p)方法优化得到了不同外电场(-0.03—0.03a.u.)下SiO分子基态的稳定电子结构，研究了外电场对SiO分子基态键长、能量、电荷分布、能级分布，能隙及红外光谱的影响规律.结果表明，分子结构与电场呈现强烈的依赖关系，且对电场的方向依赖呈现出不对称性.同时在正向外电场逐渐增大的过程中，SiO分子能隙始终处于减小趋势，占据轨道的电子易于激发至空轨道，因而为研究材料的电致发光机理奠定了一定的理论基础.     

原子个数n对碳分子线Cn(n＝3～10)基态结构特性的影响

利用密度泛函B3LYP方法, 在6-311++g**基组水平上对碳分子线Cn(n＝3～10)体系的基态电子结构特性等作了理论计算. 计算结果表明, 当n为奇数时, 碳分子线Cn基态都为单重态, 反之, 当n为偶数时, 三重态为其稳定的基态. 同时在得到碳分子线基态构型的基础上, 对其极化率、电荷分布和能级分布进行了研究, 确定了碳分子线体系最高占据轨道HOMO能量EH, 最低未占据轨道LUMO能量EL与n的关系式, 即EHn－2 < EHn < EHn+2, ELn－2 > ELn > ELn+2. 因而碳分子线Cn(n＝3～10)体系的费米能级会表现出特有的奇偶振荡, 本文也对该现象出现的原因进行了讨论.     

First-Principles Calculations of Elastic and Thermal Properties of Lanthanum Hexaboride

The plane-wave pseudopotentiai method using the generaiized gradient approximation within the framework of density functional theory is applied to anaylse the bulk modulus, thermal expansion coefficient and heat capacity of LaB6. The quasi-harmonic Debye model, using a set of total energy versus volume obtained with the plane-wave pseudopotential method, is applied to the study of the thermal properties and vibrationai effects. We analyse the bulk modulus of LaB6 up to 1500 K. The elastic properties calculations show that our system is mechanically stable. For the heat capacity and the thermal expansion, significant differences in properties are observed above 300K. The calculated zero pressure bulk modulus is in good agreement with the experimental data. Moreover, the Debye temperatures are determined from the non-equilibrium Gibbs functions and compared to available data.     

Pseudo-potential investigations of structural, elastic and thermal properties of tungsten disilicide

The plane-wave pseudopotential method using the generalized gradient approximation within the density functional theory is used to investigate the structure and bulk modulus of WSi₂. The quasi-harmonic Debye model, using a set of total energy versus cell volume obtained with the plane-wave pseudopotential method, is applied to the study of the elastic properties and vibrational effects. We have analysed the bulk modulus of WSi₂ up to 1600~K. The major trend shows that the WSi₂ crystal becomes more compressible when the temperature rises and the increase of compressibility leads to the decrease of Debye temperature. The predicted temperature and pressure effects on the thermal expansion, heat capacity and Debye temperatures are determined from the non-equilibrium Gibbs functions and compared with the data available.     

AlN,GaN和InN分子基态的结构和解析势能函数(英文)

采用密度泛函理论的B3LYP/6-311+G(3df)方法优化计算了A1N,GaN和InN分子基态的平衡结构、振动频率和离解能.根据原子分子反应静力学原理,导出了A1N,GaN和InN分子的合理离解极限,利用Murrell-Sorbie势能函数和从头算结果得到基态相应的解析势能函数并由光谱数据和解析势能函数的关系计算了基态的光谱数据(α_e,B_e,ω_e和ω_ex_e),计算结果与实验数据符合得相当好.     

Properties of a Si₂N molecule under an external electric field

In the present work,we adopt the ccsd/6-31g(d) method to optimize the ground state structure and calculate the vibrational frequency of the Si2N molecule.The calculated frequencies accord satisfactorily with the experimental values,which helps confirm the ground state structure of the molecule.In order to find how the external electric field affects the Si2N molecule,we use the density functional method B3P86/6-31g(d) to optimize the ground state structure and the time-dependent density functional theory TDDFT/6-31g(d) to study the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule under different external electric fields.It is found that the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule are affected by the external electric field.One of the valuable results is that the absorption spectra of the yellow and the blue-violet light of the Si2N molecule each have a red shift under the electric field.The luminescence mechanism in the visible light region of the Si2N molecule is also investigated and compared with the experimental data.