Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

Adsorption-enhanced spin–orbit coupling of buckled honeycomb silicon

We have studied the electronic structures of quasi-two-dimensional buckled honeycomb silicon (BHS) saturated by atomic hydrogen and fluorine by means of first-principles calculations. The graphene-like hexagonal silicon with chair configurations can be stabilized by atomic hydrogen and fluorine adsorption. Together with a magnetic ground state, large spin–orbit coupling (SOC) of BHS saturated by hydrogen on either side (Semi-H-BHS) indicated by the band splitting of σ bond at Γ point in the Brillouin zone is attributed to the intermixing between the density of states of hydrogen atoms and π bonds of unpassivated Si₂ around the Fermi level. The Zeeman spin splitting is most likely caused by the internal electric field induced by asymmetric charge transfer.     

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 Å, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E_F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ_3n > Δ_3n+1 > Δ_3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.     

硅烯量子点二聚物的等离激元激发

基于含时密度泛函理论,研究了随着间距改变时硅烯量子点二聚物的等离激元激发特性。沿垂直于硅烯所在平面方向激发时,在一定间距范围内,硅烯量子点二聚物中形成了长程电荷转移激发模式。参与长程电荷转移激发的π电子主要在两个量子点之间运动。该等离激元模式随着间隙的减小发生蓝移。此外,在不同间距时,体系中还有两个等离激元共振带,分别位于7和15 eV附近。沿平行于硅烯所在平面方向激发时,由于两个量子点之间的耦合,在低能     

Field-modulated low-energy electronic and optical properties of armchair silicene nanoribbons

The tight-binding model including spin–orbit coupling is used to study electronic and optical properties of armchair silicene nanoribbons (ASiNRs) in electric fields. Perpendicular electric field monotonically increases band-gap, the DOS, and absorption frequency and strength. It does not change spin-degeneracy, edge-states, and optical selection rule. However, parallel electric field strongly modulates energy dispersions resulting in oscillatory band-gaps, shift in edge-states, and destruction of spin-degeneracy. It induces more transition channels and constructs new selection rules that exhibits richer optical spectra. Modulations of electronic and optical properties of ASiNRs have strong dependence on the direction of electric field and nanoribbon's geometry.     

硅烯量子点的等离激元激发

基于含时密度泛函理论, 研究了硅烯量子点的等离激元激发. 沿量子点所在的平面方向, 体系中有两个主要的等离激元共振带. 一个等离激元共振带位于2.0 eV附近, 另一个等离激元共振带位于7.0 eV附近. 由于离域化的π电子参与了两个等离激元共振带的激发, 沿激发方向随着矩形硅烯量子点边长的增加, 体系的两个等离激元共振带都发生红移. 硅烯量子点的等离激元激发还依赖于边界的构型. 此外, 由于六角形硅烯量子点的对称性较高,沿量子点所在平面的不同方向激发时, 体系的等离激元共振模式相同.     

Electric and optical properties modulations of armchair silicene nanoribbons by transverse electric fields

Under the influence of the external transverse electric fields, the effective mass and optical properties of armchair-edge silicene nanoribbons (ASiNRs) are investigated using the first-principles based on density functional theory (DFT). The results show that, comparing without the external transverse electric fields, the band gaps decrease monotonously, and the effective masses of the electrons and holes change non-monotonously with the absolute value of the electric fields, respectively. The total density of states (DOS) shows that, under the external electric fields, 9-ASiNR exhibits p-type semiconductor characters. Because of the obvious difference of the imaginary parts between the//x and//y directions, 9-ASiNR shows an optical anisotropy. In//x direction, the peaks of the dielectric function have evident red shift which are all associated with the electrons transition between Si 3p orbit and Si 3p, 3s orbits.     

掺杂对硅烯的性能影响

硅烯是单原子层的硅薄膜,具有类石墨烯结构.因此拥有与石墨烯相似的各种奇特的热学、化学、光学和电学性质.近年来,硅烯引起了研究者的广泛关注,作为一种新型的二维狄拉克电子材料,硅烯在理论计算和实验上都取得了不少新的进展.本文主要在前人对硅烯实施边缘钝化、掺杂、外加电场、加应力或者表面官能团修饰和吸附等研究的情况下,结合当前硅烯的研究发展趋势,重点研究了不同掺杂对硅烯性质的影响,并探讨硅烯在未来硅基电子器件的应用前景.     

电场作用下P掺杂硅烯选择性吸附CH_4的第一性原理计算

在煤层气中选择性吸附和捕捉甲烷分子,对提高煤矿安全具有十分重要的意义.本文采用第一性原理计算的方法,研究了外加电场作用下P掺杂硅烯对甲烷分子的选择性吸附性能.结果表明:正电场作用下,P掺杂硅烯与甲烷分子之间产生较强的化学吸附,能够快速捕获甲烷分子.当关闭外加电场时,P掺杂硅烯与甲烷分子之间则为微弱的物理吸附,甲烷分子很容易实现脱附.同时还发现,外加电场作用下,P掺杂硅烯与氮气、氧气及水之间的吸附均属于物理吸附,表明P掺杂硅烯可以在这些混合气体中实现甲烷气体的选择性吸附. P掺杂硅烯有望成为选择性好的甲烷传感、捕获新材料.