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101.
102.
利用新研制的紧凑型线性变压器驱动源(LTD)脉冲功率源二极管产生的电子束源,开展了S波段长脉冲相对论速调管放大器(RKA)的初步实验研究。采用无箔空心阴极和0.9 T恒流源引导磁场从LTD二极管引出了电压600 kV、束流6 kA、脉宽150 ns的环形电子束,该电子束经过1个同轴输入腔和2个同轴调制腔的调制后,产生了幅度5 kA、脉宽110 ns的基波调制束流,采用该调制束流驱动同轴微波提取腔,辐射输出了峰值功率820 MW/110 ns的辐射微波,效率28%,增益36 dB。同时,开展了重复脉冲RKA和相位特性的实验研究,重复频率10 Hz运行时,辐射微波达到800 MW/100 ns,相位抖动小于 20°。 相似文献
103.
空间电荷效应是引起发射度增长的主要因素,特别是在高压直流连续波光阴极注入器中。分析了高压直流连续波光阴极注入器中线性空间电荷力的特点及其对电子束横向发射度的影响,并从理论上解析地研究了螺线管发射度补偿的原理及特点。最后利用Parmela程序对中国工程物理研究院高压直流连续波光阴极注入器的发射度补偿作了模拟计算。结果表明,束团电荷量为80 pC的电子束在350 keV高压直流电子枪出口处的横向归一化发射度为5.14 mmmrad,经过螺线管补偿后,其最小横向发射度变为1.27 mmmrad。电子束的发射度得到了很好的补偿。 相似文献
104.
In accordance with nonperturbative quantum scattering theory,we investigate photoelectron angular distributions(PADs) from above-threshold detachment(ATD) of negative ions irradiated by circularly polarized few-cycle laser fields.Electrons ejected on the polarization plane demonstrate distinct anisotropies in angular distributions which distinctly vary with the carrier-envelope(CE) phase.The anisotropy is caused by interference between transition channels;it also depends strongly on laser frequency,pulse duration,and kinetic energy of photoelectrons.Optimal emission of photoelectrons,which varies with CE phase,makes it possible to control photoelectron motion. 相似文献
105.
We create a GaN photocathode based on graded Alx Ga1-x N buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes.A gateshaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained.Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones.The fitted interface recombination velocity is 5×104 cm/s,with negligible magnitude,proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer. 相似文献
106.
This paper investigates the current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky barrier diodes (SBDs) in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature (T), has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A* = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In(I0/T2) - (qσ)2/2(κT)2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2. 相似文献
107.
Motivated by the recent pioneering advances on nanoscale plasmonics and also nanophotonics technology based on the surface plasmons (SPs), in this work, we give a master equation model in the Lindblad form and investigate the quantum optical properties of single quantum dot (QD) emitter coupled to the SPs of a metallic nanowire. Our main results demonstrate the QD luminescence results of photon emission show three distinctive regimes depending on the distance between QD and metallic nanowire, which elucidates a crossover passing from being metallic dissipative for much smaller emitter-nanowire distances to surface plasmon (SP) emission for larger separations at the vicinity of plasmonic metallic nanowire. Besides, our results also indicate that, for both the resonant case and the detuning case, through measuring QD emitter luminescence spectra and second-order correlation functions, the information about the QD emitter coupling to the SPs of the dissipative metallic nanowire can be extracted. This theoretical study will serve as an introduction to understanding the nanoplasmonic imaging spectroscopy and pave a new way to realize the quantum information devices. 相似文献
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