球面波干涉法测量拉盖尔-高斯光的轨道角动量

采用球面波的拉盖尔-高斯光(LG光)和平面波的基模高斯光干涉的方法 ,可观察到多叶螺旋的干涉图样,螺旋的叶数即是LG光的拓扑荷数,由拓扑荷数可知光子的轨道角动量.利用涡旋相位片产生拓扑荷数1～8的LG光,研究了光强比和偏振条件对干涉图样的影响.为获得高对比度的干涉图样,要求LG光和高斯光的偏振方向相同并且光强基本相等.球面波干涉法用于测量LG光的轨道角动量简单直观,与干涉光强空间分布的细节无关,因此对光强扰动和背景噪声不敏感.     

Controlling chaos by a delayed continuous feedback in a gas discharge plasma

Control of chaos by a delayed continuous feedback is studied experimentally in a gas discharge plasma. The power spectrum, the maximum of Lyapunov exponents and the time series of the signals all indicate that the period-1 unstable periodic orbit is controlled successfully. The dependence of the control on the delay time and the feedback gain as well as the strength of white noise is also investigated in detail. The experimental results show that the scaling index of the control versus the strength of white noise is 1.995, which is very close to that obtained from the simple logistic map.     

CdGeAs2单晶体的腐蚀研究

报道了一种新型的CdGeAs2晶体择优腐蚀剂,配方为:H2O2(30;): NH4OH(含NH325;-28;): NH4Cl(5mol/L): H2O=1 mL: 1.5 mL: 1.5 mL: 2 mL.将经机械研磨、物理抛光和溴甲醇化学抛光处理后的表面平整无划痕的CdGeAs2晶片,在40 ℃下超声振荡腐蚀数分钟,采用金相显微镜和SEM进行蚀坑观察.结果表明,新型腐蚀剂对CdGeAs2晶体(204)和(112)晶面择优腐蚀效果显著,蚀坑取向一致,具有很强的立体感;(204)晶面蚀坑呈三角锥形,(112)晶面蚀坑呈五边形,从晶体结构上对蚀坑形成机理进行了分析讨论.     

基于里德堡原子的电场测量

里德堡原子具有大的极化率、低的场电离阈值和大的电偶极矩,对外部电磁场十分敏感,可以用来测量电场强度特别是微波电场的强度. 利用里德堡原子的量子干涉效应(电磁诱导透明和Autler-Townes效应)测量微波电场强度的灵敏度远高于传统采用偶极天线测量微波电场的灵敏度. 此外,里德堡原子电场计 可以溯源到标准物理量,不需要额外校准; 采用玻璃探头,对待测电场干扰少; 灵敏度也不依赖于探头的物理尺寸. 同时,该电场计还可以实现对微波电场的偏振方向的测量, 实现亚波长和近场区域电场成像与测量. 通过选择不同的里德堡能级,可以实现1-500 GHz超宽频段范围内微波电场强度的测量. 主要综述基于里德堡原子的电场精密测量研究, 详细介绍了里德堡原子电场计的原理与实验进展, 并简单讨论了其发展方向.     

还原温度对双介孔钴基催化剂费-托合成性能的影响

通过等体积浸渍法制备了双介孔钴基催化剂,采用XRD、BET、SEM、H2-TPR等手段考察了催化剂的性质,并研究了还原温度对催化剂结构及费托合成催化性能的影响。结果表明,随着还原温度的提高,催化剂活性位增加,活性增加,但增加到一定程度后活性降低,而甲烷选择性随着还原温度的提高逐渐增加,这是反应过程中催化剂表面存在的钴氧化物,使得水煤气反应变得活跃,烃产物移向低碳烃。     

Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO？ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain （FDTD） method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.     

还原-氧化预处理对双孔道钴基催化剂催化性能的影响

以双介孔分布MCM-41分子筛为载体,采用等体积浸渍法制备了钴基催化剂,并考察了还原-氧化预处理方式对催化剂结构及费托合成催化性能的影响。新鲜催化剂经预处理之后,XRD结果显示钴物种主要以单质钴形式存在,且主要以面心立方钴晶型出现,晶粒粒径由原来的8.4nm增加到22.6nm,由于晶粒粒径的增大,拉曼峰呈现蓝移特征。SEM及TEM表征表明,预处理后催化剂中钴物种在载体中有较好的分散性。H₂-TPR结果表明,新鲜催化剂经还原-氧化预处理后钴物种的还原温度降低,钴物种-载体间作用力增强。费托合成反应结果显示,经预处理后催化剂较新鲜催化剂活性低,甲烷选择性提高,但C_5~18的选择性明显提高,尤其是C_5~11的选择性可达到新鲜催化剂的两倍。     

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode

A near-infrared germanium(Ge)Schottky photodetector(PD)with an ultrathin silicon(Si)barrier enhancement layer between the indium-doped tin oxide(ITO)electrode and Ge epilayer on Si or silicon-on-insulator(SOI)is proposed and fabricated.The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates.The Si-and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm2 and 44 mA/cm2,respectively.Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate,an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD.These complementary metal–oxide–semiconductor(CMOS)compatible Si(or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency.     

Plasmon-induced transparency effect in hybrid terahertz metamaterials with active control and multi-dark modes

We numerically demonstrate a photo-excited plasmon-induced transparency (PIT) effect in hybrid terahertz (THz) metamaterials. The proposed metamaterials are regular arrays of hybrid unit cells composed of a metallic cut wire and four metallic split-ring resonators (SRRs) whose gaps are filled with photosensitive semiconductor gallium arsenide (GaAs) patches. We simulate the PIT effect controlled by external infrared light intensity to change the conductivity of GaAs. In the absence of photo excitation, the conductivity of GaAs is 0, thus the SRR gaps are disconnected, and the PIT effect is not observed since the dark resonator (supported by the hybrid SRRs) cannot be stimulated. When the conductivity of GaAs is increased via photo excitation, the conductivity of GaAs can increase rapidly from 0 S/m to 1×10⁶ S/m and GaAs can connect the metal aluminum SRR gaps, and the dark resonator is excited through coupling with the bright resonator (supported by the cut wire), which leads to the PIT effect. Therefore, the PIT effect can be dynamically tuned between the on and off states by controlling the intensity of the external infrared light. We also discuss couplings between one bright mode (CW) and several dark modes (SRRs) with different sizes. The interference analytically described by the coupled Lorentz oscillator model elucidates the coupling mechanism between one bright mode and two dark modes. The phenomenon can be considered the result of linear superposition of the coupling between the bright mode and each dark mode. The proposed metamaterials are promising for application in the fields of THz communications, optical storage, optical display, and imaging.     

双能谷效应对N型掺杂Si基Ge材料载流子晶格散射的影响

性能优越的Si基高效发光材料与器件的制备一直是Si基光电集成电路中最具挑战性的课题之一.Si基Ge材料不仅与成熟的硅工艺相兼容,而且具有准直接带特性,被认为是实现Si基激光器最有希望的材料.对Si基Ge材料N型掺杂的研究有利于提示出其直接带发光增强机理.本文研究了N型掺杂Si基Ge材料导带电子的晶格散射过程.N型掺杂Si基Ge材料具有独特的双能谷(Γ能谷与L能谷)结构,它将通过以下两方面的竞争关系提高直接带导带底电子的占有率:一方面,处于Γ能谷的导带电子通过谷间光学声子的散射方式散射到L能谷;另一方面,处于L能谷的导带电子通过谷内光学声子散射以及二次谷间光学声子散射或者直接通过谷间光学声子散射的方式跃迁到Γ能谷.当掺杂浓度界于10~(17)cm~(-3)到10~(19)cm~(-3)时,适当提高N型掺杂浓度有利于提高直接带Γ能谷导带底电子占有率,进而提高Si基Ge材料直接带发光效率.